MARKING 1F Search Results

FVXO-HC53

Abstract: FVXO-HC73 FVXO-LC53 FVXO-LC73 FXO-HC53 FXO-HC73 FXO-LC53 FXO-LC73 FXO-PC53 FXO-PC73
Contextual Info: XpressO Package Dimensions, Marking & Labeling Dimensions, marking patterns and product labeling for the two currently available Fox XpressO packages are shown below. 7 x 5 mm 7.5 5 5x x3.2 3.2mm mm Typical XpressO marking configurations are illustrated below. Note that in all cases, Pin 1

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

ir1f

Abstract: 10MQ040N 10MQ100N 2f marking code 036 marking diode ir1f 10MQ060N 15MQ040N 9749 1F marking
Contextual Info: SMA PART MARKING PART NUMBER EXAMPLES Example: 10MQ040N INTERNATIONAL RECTIFIER IDENTIFICATION PART NUMBER IR1F 9749 CATHODE BAND SIDE 1F = 10MQ040N 1H = 10MQ060N 1J = 10MQ100N 2F = 15MQ040N DATE CODE YYWW YY = YEAR WW = WEEK

1GW NPN

Abstract: 1FW ST 1FW 07 1FW transistor marking 1gw marking 1FW 1FW npn 1fw 02 1FW marking BC847CW
Contextual Info: BC847BW BC847CW SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC847BW 1FW BC847CW 1GW SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847BW - THE PNP COMPLEMENTARY

diode sm4007 -MELF

Abstract: diode rectifier 10BF40 10BF60 10BQ040 SMB sm4007 international logo transistor 1p MARKING 1P diode sm4007
Contextual Info: SMB PART MARKING 11 = SM4001 12 = SM4002 13 = SM4003 14 = SM4004 15 = SM4005 16 = SM4006 17 = SM4007 CATHODE BAND SIDE INTERNATIONAL RECTIFIER LOGO PART NUMBER EXAMPLES 1C PART NUMBER Example: 10BQ015 1C = 10BQ015 1F = 10BQ040 1H = 10BQ060 1J = 10BQ100 1M = SM5819

transistor marking 1f

Abstract: CMBT5550
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: KEMET Part Number: CDR35BP133AFUR C1825N133F5GRL[U], C1825N133F5GRL[U]-MILITARYBULK Capacitor, ceramic, 0.013 uF, +/-1% Tol, 50V, C0G, 1825 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size: Voltage: Symbol

BAT62-03W

Contextual Info: BAT62-03W Silicon Schottky Diode 2
Low barrier diode for detectors up to GHz 1 frequencies VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration BAT62-03W L 1=C Package 2=A SOD323 Maximum Ratings

raychem termination kit and splicing kit

Abstract: Raychem splice raychem termination kit PRICE raychem termination kit 80806033 GR-771-Core Raychem splice tool raychem control cable splicing kit FIBER OPTIC SPLICE ENCLOSURE raychem termination kit for single core
Contextual Info: CABLE MARKING & LABELS A WARNING LABELS Warning labels are available from FIS in a variety of sizes and colors with many standard logos available. Selection includes (C) Wrap Around, Tie On, Sticky Back and Write-On. Call for Custom Labels. PART # DESCRIPTION

BAS16-03W

Contextual Info: BAS16-03W Silicon Switching Diode 2
For high-speed switching applications 1 VPS05176 Type Marking Pin Configuration Package BAS16-03W B 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current

bat15

Abstract: BAT15-03W
Contextual Info: BAT15-03W Silicon Schottky Diode
DBS mixer applications up to 12 GHz 2
Low noise figure 1
Low barrier type VPS05176 1 2 EHA07001 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT15-03W

4C3 diode

Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
Contextual Info: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3
Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R

BFN24

Abstract: BFN25 BFN26 BFN27
Contextual Info: BFN24, BFN26 NPN Silicon High-Voltage Transistors 3
Suitable for video output stages in TV sets and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage 2
Complementary types: BFN25, BFN27 PNP 1 Type Marking Pin Configuration

BCP51M

Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 SCT-595
Contextual Info: BCP51M.BCP53M PNP Silicon AF Transistor 4
For AF driver and output stages 5
High collector current
Low collector-emitter saturation voltage 3
Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs

bf998

Abstract: bf998 mosfet tetrode application note VPS05178
Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H

SMBT5087

Contextual Info: SMBT5087 PNP Silicon Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage 2
Low noise between 30Hz and 15kHz Type SMBT5087 Marking s2Q 1 Pin Configuration 1=B 2=E VPS05161 Package SOT23

eia marking code

Abstract: MARKING 1F EIA 481 PD rectifier transistor marking 1f marking row
Contextual Info: 10MQ040N Preliminary Data Sheet PD-20518 rev. C 03/99 Tape & Reel Information NOTE: 1. OUTLINE CONFORMS TO EIA-481. Dimensions in millimeters and inches Marking & Identification Each device has 4 characters, configurated two digits on two rows, for identification. The first row designates the

Contextual Info: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 * “G” Lead Pb -Free *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V 3 MARKING DIAGRAM 3 XX = Device Code (See

BCP48

Abstract: BCP28 VPS05163
Contextual Info: BCP28, BCP48 PNP Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: BCP29/49 NPN 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00008 Type Marking Pin Configuration Package BCP28 BCP 28

VPS05163

Abstract: BCP68 BCP69 BCP69-10 BCP69-16 BCP69-25
Contextual Info: BCP69 PNP Silicon AF Transistor
For general AF applications 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary type: BCP68 NPN 2 1 Pin Configuration VPS05163 Type Marking Package BCP69 BCP 69 1=B

bb515

Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package

BAW56 application note

Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Contextual Info: BAW56 Silicon Switching Diode Array 3
For high-speed switching applications
Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR