MARKING 1AM Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: 6/24/02 6/24/02 Discrete Semiconductor DCS/PCN-1011 Alert Type: PCN #: Specification Change, Marking Change, Assembly Site & Test Site PCN #:2002-1011 TITLE Specification Change, Marking Change MMBT3904

1AM marking transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE

marking 1am

Abstract: transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 MMBT3906 1AM 6 1aM sot-23 transistor
Contextual Info: MMBT3904 Pb 0.2 Watts NPN Plastic-Encapsulate Transistors RoHS COMPLIANCE SOT-23 Features — As complementary type, the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction — Marking: 1AM Dimensions in inches and millimeters Maximum Ratings

1AM MMBT3904

Abstract: transistors 1am transistor 1am
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ

LMBT3904LT1G

Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

sot23 marking 1AM

Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
Contextual Info: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — As complementary type the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

1AM marking transistor

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

transistor marking 1am

Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

g554

Abstract: 93 MARKING CODE
Contextual Info: REV. S tatus REVISION 0 5 /0 4 /9 3 TS REVISION A CLARIFIED MARKING 0 6 /2 9 /0 5 YS A. Electrical specification @ 2 5 °C 1. Power rating; 500 mW 2. Dielectric strength; 500 VDC 1 minute 3. Insulation resistance; 10.000 MQ MIN @ 500 VDC 4. Turns ratio;

TF5S21ZZ

Abstract: MET-38 microtran
Contextual Info: REV. S ta tu s REVISION 6 / 6 / 9 5 TS REVISION A CHANGED MARKING. 0 7 / 0 3 / 0 0 TS TELECOMMUNICATION COUPLING MINIATURE ENCAPSULATED TRANSFORMER DESIGNED TO OPERATE 50mW MAX IN PRIMARY AND REFLECT A PRIMARY SOURCE IMPEDANCE OF APPROXIMATELY 5 0 0 0 WITH 500C] CT, 1250 SPLIT LOAD ONSECONDARY.

TTC-167

Abstract: 10k0 10KO
Contextual Info: R EV. S ta t u s REVISION 06/02/92 TS REVISION A NEW FORMAT TEMECULA WAS CARSON ADDED SAFETY 07/09/96 TS REVISION B REMOVED ”t ” FROM DC RESISTANCE CHANGED MECH SPEC TO 4 PINS 12/20/04 YS REVISION C REVISED MARKING 07/19/05 YS DRY COUPLING TELECOMMUNICATION COUPLING TRANSFORMER FCC PART 68

G507

Abstract: TAM Transformer origin
Contextual Info: TAAA12J3A REV. S ta tu s REVISION 06/15/92 YS REVISION A FLIPPED RADII & CLARIFIED MARKING 06/2 4/05 YS REVISION B RoHS COMPLIANT 11/03/05 MP REVISION C NOTE 5: 400nH WAS 500|iH 05/16/07 MP A. Electrical specification 2 5 ° C 1. Pow er rating; 5 0 0 mW

G500

Abstract: origin COUNTRY OF ORIGIN
Contextual Info: TAAA12J3A REV. S ta tu s REVISION 0 4 / 1 5 / 9 2 TS REVISION A FLIPPED RADII & CLARIFIED MARKING 0 6 / 2 4 / 0 5 YS REVISION B RoHS COMPLIANT 1 1 / 0 3 / 0 5 MP REVISION C NOTE 5: 4500nH WAS 5000|iH 0 5 / 1 6 / 0 7 MP A. Electrical specification 25°C

Class 130B transformer

Abstract: POWER TRANSFORMER class 130B LR81383-7 12VA 3FL20-600 E92957 PF12-20 20V5 100MC1 PF-12-20
Contextual Info: REV. S ta tu s REVISION 3 / 1 6 / 9 1 TS REVISION A TEMECULA WAS CARSON. 1 2 / 1 5 / 9 2 TS REVISION B REFORMATTED UPDATED LABELS 5 / 1 0 / 9 5 TS REVISION C ADDED DUAL MARKING 1 1 / 0 4 / 9 9 TS THREE FLANGE BOBBIN POWER TRANSFORMER A. Electrical Specifications 25° C

Class 130B transformer

Abstract: 30va transformer 3FL30-200 E92957 LR81383-7 PF6-30
Contextual Info: REV. S ta tu s REVISION 3 /1 6 /9 1 TS REVISION A TEMECULA WAS CARSON. UPDATED LABELS 1 2 /1 5 /9 3 TS REVISION B REFORMATTED 6 /1 7 / 9 3 TS REVISION C ADDED DUAL MARKING H / 05/99 TS THREE FLANGE BOBBIN POWER TRANSFORMER O A. Electrical Specifications 25° C

Class 130B transformer

Abstract: LR81383-7 3FL56-100 E92957 PF6-56 power transformer 130b TRANSFORMER
Contextual Info: REV. S tatu s REVISION 3/16/91 TS REVISION A TEMECULA WAS CARSON. UPDATED LABELS 12/15/92 TS REVISION B REFORMATTED 6/17/93 TS REVISION C ADDED DUAL MARKING 11/05/99 TS THREE FLANGE BOBBIN POWER TRANSFORMER A. Electrical Specifications 25° C 1. Input Voltage and Frequency;115/230V 50/60H z

Contextual Info: REV. S ta tu s REVISION 0 8 / 1 4 / 9 2 TS REVISION A FLIPPED RADII & CLARIFIED MARKING 0 6 / 2 9 / 0 5 YS A. Electrical specification @ 2 5 °C cr Ld m 1. 500 mW 2. 500 VDC 1 minute 3. 10,000 MQ MIN 500 VDC CO in in 4. (1 - 5 ) : (6 - 2 ) = 1 : 2 CT ±5%

LR81383-7

Abstract: microtran 12VA 3FL56-200 E92957 PF12-56 92ts
Contextual Info: REV. S ta tu s REVISION 3 /1 6 /9 1 TS REVISION A TEMECULA WAS CARSON. UPDATED LABELS 1 2 / 1 5 / 9 2 TS REVISION B REFORMATTED 6 / 1 7 / 9 3 TS REVISION C ADDED D U AL MARKING 1 1 / 0 4 / 9 9 TS THREE FLANGE BOBBIN POWER TRANSFORMER O' A. Electrical S pecifications @ 2 5 ° C