MARKING 16 TRANSISTOR SOT23 Search Results

Contextual Info: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS SYMBOL

TRANSISTOR 1616

Contextual Info: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS PARAMETER

BC807

Abstract: BC807-40 16 transistor sot23
Contextual Info: BC807-16 BC807-25 BC807-40 SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — Ldeally suited for automatic insertion — epitaxial planar die construction — complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C

5Cs transistor

Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
Contextual Info: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16

BC807-40

Abstract: 5B1 SOT-23 BC807-16 BC807-25
Contextual Info: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO

BC807-16

Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
Contextual Info: BC807-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SOT-23 SURFACE MOUNT TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage

Contextual Info: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO

BC817 A6

Abstract: transistor 6c o25c BC817-40-6C BC817-16 BC817-25 BC817-40 A66B
Contextual Info: BC817-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SOT-23 SIGANL TRANSISTORS 3 1 2 Marking A6/6B/6C o ABSOLUTE MAXIMUM RATINGS Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V CBO 5.0

bc807

Abstract: BC807-40 BC807-40 5C BC807-16 BC807-25
Contextual Info: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO

transistor BC 310

Abstract: 6C TRANSISTOR MARKING BC817-16 BC817-25 BC817-40 A66B
Contextual Info: BC817-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SOT-23 SIGANL TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A6/6B/6C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage

Contextual Info: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE * “G” Lead Pb -Free 1 2 SOT-23 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage

Contextual Info: BSS 131 Infine on technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type Vbs fc ffDS(on) Package Marking BSS 131 240 V 0.1 A 16Î2 SOT-23 SRs Type BSS 131 BSS 131

16 sot 23

Abstract: BSS 130 marking SRs SOT E6327 Q62702-S565 Q67000-S229 marking BSs K3530
Contextual Info: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565

Q62702-S565

Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
Contextual Info: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565

PMBTA45

Abstract: TRANSISTOR SMD MARKING CODE LK MARKING CODE SMD IC smd transistor marking Lk TRANSISTOR SMD MARKING CODE LK 0 35
Contextual Info: PMBTA45 500 V, 150 mA NPN high-voltage low VCEsat BISS transistor Rev. 01 — 16 September 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

MAM25S

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.

BF747

Abstract: MBB400 sot23-4 marking a1
Contextual Info: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.

bf547 philips

Abstract: BF547 B12 IC marking code marking code 604 SOT23
Contextual Info: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation

Contextual Info: 62 7  BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  BFU550A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium

MBB262

Abstract: MBB255 MCD089
Contextual Info: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure

Contextual Info: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features

BFR91A

Abstract: S parameters of BFR93AR GHz transistor BFR93AR BFT93 IMD2 transistor
Contextual Info: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure