MARKING "MA" SOT23 6 Search Results

zener y11

Abstract: zener 472
Contextual Info: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N

power 22E

Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
Contextual Info: SMBT3906 PNP Silicon Switching Transistor 3
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings

Contextual Info: Diode Network / ESD Suppressor CDA3S06G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and

Comchip Technology

Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
Contextual Info: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand

electronic schematic

Contextual Info: Diode Network / ESD Suppressor COMCHIP www.comchiptech.com CDA3S06L Voltage: 8 Volts Current: 50 mA Package SOT23-6 Feature Marking “ CDA3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and

Contextual Info: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5

BCW66

Abstract: BFS17P E6327 marking code MCs
Contextual Info: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFS17P

Contextual Info: BFS17P NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

BFS17P

Contextual Info: BFS17P NPN Silicon RF Transistor 3
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

SOT23-5 marking 016

Abstract: Marking 305 SOT23-5 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C LAL sot23-5 MARKING V32 SOT23
Contextual Info: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 GND 1 Vin 2 Vout 3 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V

br 2222 npn

Abstract: SMBT2222A SMBT2907A
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

MARKING s1P

Abstract: 99V0
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

Contextual Info: SMBT2907A PNP Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2222A NPN 2 1 Type Marking SMBT2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

sot23-5 Marking

Abstract: MC78LC30HT1G top marking c2 sot23 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C q2 marking sot23-5 MC78LC18
Contextual Info: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 Gnd 1 Vin 2 Vout 3 5 N/C 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V

Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

BSS81C

Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

BSS80B

Abstract: BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

BSS79

Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E

BF96I

Abstract: T0-50 s525 BF964S BF96
Contextual Info: Tem ic S e m i c o n d u c t o r s TOSO 3 # TOSO (4) # SOT23 SOT143 SOT343 RF Transistors Part Number Marking Electrica) Characteristics V DS fomax V mA mW °C Y ft at Id s Gps and F mS dB mA at f Cjsçgi and CDst at f dB MHz pF pF MH? Id s s a* V u s mA

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

NXP date code marking

Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

SOT89 transistor marking

Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Contextual Info: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications