MARK E3 DIODE Search Results

HVC327C

Contextual Info: HVC327C Variable Capacitance Diode for VHF tuner REJ03G0053-0100Z Rev.1.00 Apr 16, 2004 Features • • • • Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min). Low series resistance and good C-V linearity.

HVU327C

Contextual Info: HVU327C Variable Capacitance Diode for VHF tuner REJ03G0215-0100Z Rev.1.00 Apr 16, 2004 Features • • • • Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min). Low series resistance and good C-V linearity.

MARK BE diode SOD523

Abstract: diode marking code 12L MARK BE diode SOD523 general AOZ8201 AOZ8201NI-05L AOZ8201NI-12L 12L marking AOS date code System diode body mark a1
Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

MARKING G SOD523

Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

Hitachi DSA002748

Contextual Info: HRB0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-609 Z Rev 0 March 1, 1998 Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

AOZ8201

Abstract: AOZ8201NI-05L AOZ8201NI-12L SOD523 land pattern DIODE ED 16 AOS date code System General Semiconductor diode marking ME
Contextual Info: AOZ8201 One-line TVS Diode General Description Features The AOZ8201 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This state-ofthe-art device utilizes AOS leading edge Trench Vertical

HRB0502A

Abstract: DSA003643
Contextual Info: HRB0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-609 Z Rev 0 Mar. 1998 Features • Low forward voltage drop and suitable for high efficincy rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

HRF302A

Abstract: 57fh b DIODE 3A do-214 Hitachi DSA00308
Contextual Info: ADE-208-244B Z HRF302A Silicon Schottky Barrier Diode for Rectifying Rev. 2 Nov.1994 Features Outline • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

HVC327C

Contextual Info: Preliminary Datasheet HVC327C Variable Capacitance Diode for VHF tuner REJ03G0053-0200 Rev.2.00 May 06, 2010 Features •    Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min).

Contextual Info: Preliminary Datasheet HVC327C Variable Capacitance Diode for VHF tuner REJ03G0053-0200 Rev.2.00 May 06, 2010 Features •    Low voltage type tuning voltage 1 to 10V , it is suitable for ET without DC/DC converter. High capacitance ratio (n = 11.0 min).

BYX97-300

Abstract: RECTIFIER DIODES PHILIPS BYX BYX97 BYX97-300R
Contextual Info: 2â6âk,E3 BYX97 SERIES M AINTENANCE TYPE ^53131 25E D N A [1ER P H I L I P S / D I S C R E T E G 0 22 Ô5 3 T B RECTIFIER DIODES Also available to B S 9331-F130 Silicon rectifier diodes in metal envelopes similar to DO -5, intended fo r use in power rectifier

sot23 mark code e2

Contextual Info: PI74FCT138/PI74FCT238T PI74FCT138T PI74FCT238T

diode marking YF

Abstract: C 5388 T460 t930 marking A46 erc12 diode ERC12 T151 T760 T810
Contextual Info: ERC12 i .2A — • # » ■* » : Outline Drawings GENERAL USE RECTIFIER DIODE ■ 4 # « : Features • ■0— Hi gh surge current • 'J vjK , ISM • S fflfit t Compact size, lightweight H S iT F • Marking High reliability * 7 “ a - K :* Color code : Green

A37 diode

Abstract: ERA15 general purpose diode marking code -08
Contextual Info: E R A 1 5 i .oa M JE N 'ii : Outline Drawings GENERAL USE RECTIFIER DIODE I Features • jS'J'Sttfctf), 5 m m li7 f S*& ff A * * WAS : Marking Ultra small package, possible for 5mm pitch automatic insertion. • S f&IR te High reliability A 7 -3 —K : Ö

Contextual Info: ADE-208-398 Z 1SS174 Silicon Schottky Barrier Diode for UHF TV Tuner Mixer,Various Detector,High speed switching HITACHI Features Rev. 0 Oct. 1995 Outline • Low capacitance.(C= 1.2pF max) • Sm all g lass p ackage (M HD ) enables easy mounting and high reliability.

RKP200KP

Abstract: RKP451KE
Contextual Info: RKP451KE Ultra small Package Composite Pin Diode for Antenna Switching REJ03G1694-0100 Rev.1.00 Jun 05, 2008 Features • • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

RKP200KP

Abstract: RKP454KE
Contextual Info: RKP454KE Ultra small Package Composite Pin Diode for Antenna Switching REJ03G1697-0100 Rev.1.00 Jun 05, 2008 Features • • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

RKP200KP

Abstract: RKP450KE
Contextual Info: RKP450KE Ultra small Package Composite Pin Diode for Antenna Switching REJ03G1664-0100 Rev.1.00 Apr 17, 2008 Features • • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

RKP200KP

Abstract: RKP453KE MARK A4
Contextual Info: RKP453KE Ultra small Package Composite Pin Diode for Antenna Switching REJ03G1696-0100 Rev.1.00 Jun 05, 2008 Features • • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

RKP200KP

Abstract: RKP452KE
Contextual Info: RKP452KE Ultra small Package Composite Pin Diode for Antenna Switching REJ03G1695-0100 Rev.1.00 Jun 05, 2008 Features • • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

Contextual Info: HRB0502A Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-609 Z Rev 0 March 1, 1998 Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

4E diode

Contextual Info: SONY C O RP /C O MP O NE NT PRODS 0302303 P S O N Y 35mW High Power Laser Diode Description □ G G S 'in 1 • SONY SLD203AV 7^ H Í - o S~ Package Outline Unit : mm SLD203AV is an index-guided high-power laser diode fo r optical disc applications. Features

RClamp0502N

Abstract: Clamp0502N SLP1210N6 0502N MONOLITHIC AMP TOP MARK 06
Contextual Info: RClamp0502N RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp® Description Features ‹ ESD protection for high-speed data lines to The RailClamp® series is a family of ultra low capacitance TVS arrays designed to protect high speed data