MARK DIODE GENERAL SEMICONDUCTOR Search Results

DSM3MA2

Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

40N60KDA

Abstract: 40n60
Contextual Info: SEMICONDUCTOR KGF40N60KDA TECHNICAL DATA General Description B A O S J C KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power

40N60KDA

Abstract: 40n60 Mark MJ
Contextual Info: SEMICONDUCTOR KGF40N60KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)

marking A1 TRANSISTOR

Abstract: KTX301U f1 transistor mark
Contextual Info: SEMICONDUCTOR KTX301U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Including two TR, Diode devices in USV. 1 5 A 2 C Simplify circuit design.

marking A1 TRANSISTOR

Abstract: KTX401E 5Q14
Contextual Info: SEMICONDUCTOR KTX401E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A Simplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.

marking A1 TRANSISTOR

Abstract: KTX301E power diode f1 transistor mark TRANSISTOR A1 TR
Contextual Info: SEMICONDUCTOR KTX301E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A Simplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.

HMG02

Abstract: CRS20I30B CRS15 CUS10I40A CRS10I40A Small and Medium Diodes toshiba CMZ24 CRZ10 PART CRS15I40A CRS10I30C
Contextual Info: 2011-9 PRODUCT GUIDE Small and Medium Diodes SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Small and Medium Diodes Recently, many products ranging from computers and home appliances to automobiles and industrial equipment have been driving the need for effective solutions to reduce size and weight.

marking A1 TRANSISTOR

Abstract: COB diode H4B1 KTX401U Transistor hFE CLASSIFICATION Marking CE
Contextual Info: SEMICONDUCTOR KTX401U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Including two TR, Diode devices in USV. 1 5 A 2 C ・Simplify circuit design.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

kgt40n60kda

Abstract: 40N60KDA kec T2 40N60K
Contextual Info: SEMICONDUCTOR KGT40N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

KGT50N60KDA

Abstract: 50N60KDA KGT50N60 25a812 gate turn-off 50N60 KEC LOT NO
Contextual Info: SEMICONDUCTOR KGT50N60KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

kgt25n120kda

Abstract: 25N120KDA kgt25n120 IGBT 2000 25N120
Contextual Info: SEMICONDUCTOR KGT25N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies UPS , general inverters.

1bl3

Abstract: KTX402U
Contextual Info: SEMICONDUCTOR KTX402U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B B1 FEATURES ・Including two TR, Diode devices in USV. 1 5 A 2 C ・Simplify circuit design.

ON Semiconductor marking

Abstract: motorola ZENER diode marking code motorola transistor dpak marking motorola diode marking code On semiconductor date Code dpak YEAR A on semiconductor marking code dpack MARKING ON Semiconductor to220 transistor marking MOTOROLA sot-223 MARKING ON SEMI MOTOROLA DATE CODE transistor
Contextual Info: 504 BRD8008/D Rev. 0, Mar-2000 ON Semiconductor Part Marking Transition Brochure ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

SDP530Q

Contextual Info: SDP530Q Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530Q W3 SOD-523 Outline Dimensions

FDV302P

Contextual Info: g A Ig g H IU D SEMICONDUCTOR tm FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhanœmenî mode field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is

EC4305C

Contextual Info: EC4305C Ordering number : ENA0874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4305C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C

A1238

Abstract: A12381
Contextual Info: EC4306C Ordering number : ENA1238 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4306C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C

32608P

Contextual Info: EC4408C Ordering number : ENA0529 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4408C General-Purpose Switching Device Applications Features • • 4V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C

transistor A1215

Abstract: a1215 transistors A1215 a1215 DIODE
Contextual Info: EC4309C Ordering number : ENA1215 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4309C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C

a1016

Abstract: A10164 A10-16 ID-300mA TC-00001106 ENA1016
Contextual Info: EC4405C Ordering number : ENA1016 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4405C General-Purpose Switching Device Applications Features • • 4V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C

"MARKING CODE JS"

Abstract: marking code js BAS221
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS221 General purpose diode Product specification Supersedes data of 1999 Apr 26 1999 May 07 Philips Semiconductors Product specification General purpose diode BAS221 FEATURES DESCRIPTION • Small ceramic SMD package