MARCONI RF POWER Search Results

P35-4750-1

Abstract: NN12 P35-4755-P05
Contextual Info: Marconi Optical Components P35-4750-1 Transmit/Receive Gain Blocks and Switches for 2.5GHz WLAN Applications Features • Low receive current consumption · Integrated RF routing switch · Requires no external matching, RF coupling or biasing components Description

4755

Abstract: NN12 P35-4755-P05 Marconi Marconi Optical Components wireless switch transmit receive
Contextual Info: Marconi Optical Components P35-4755-P05 Amplifier/Switch Front End MMIC for 1.7 - 2.7GHz Wireless Applications Features • · · · · Low receive current consumption Integrated RF routing switch Requires no external matching, RF coupling or biasing components

nokia 6280

Abstract: Wire wound resistor inductance PE-1008CM High Q inductor PE-0805CD PE-1008CD chip inductor inductor coils PE-0805CM PE-1206CD
Contextual Info: WIRE-WOUND RF CHIP INDUCTORS Application Notes The Basics of Wire-Wound Chip Inductors Pulse currently supplies high quality magnetic products to companies such as 3COM, Cisco, Ericsson, Intel, Marconi, Nokia and Nortel and has been active in the field of RF engineering, since the launch of its first wire-wound 1008

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Abstract: P35-4245-0 P35-4245-3
Contextual Info: P35-4245-0 Marconi Optical Components GaAs MMIC DPDT Reflective Switch, DC - 6GHz Features • · · · Broadband performance Low insertion loss; 0.5dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4245-0 is a high performance Gallium Arsenide double pole double throw broadband RF switch MMIC. It is

P35-4211-0

Abstract: NN12 P35-4211-1
Contextual Info: P35-4211-0 Marconi Optical Components GaAs MMIC SPDT Reflective Switch, DC - 3GHz Features • · · · · Broadband performance Low insertion loss; 0.5dB typ at 1GHz Ultra low DC power consumption Fast switching speed; 3ns typical Chip form Description The P35-4211-0 is a high performance Gallium Arsenide monolithic single pole double throw RF switch, suitable for use in

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Abstract: P35-4230-000-200
Contextual Info: P35-4230-000-200 Marconi Optical Components GaAs MMIC SPST Terminated Switch, DC - 4GHz Features • · · · Broadband performance Low insertion loss; 1.6dB typ at 2GHz Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4230-000-200 is a high performance Gallium Arsenide single pole single throw broadband RF switch MMIC. It is

Contextual Info: P35 P35-4721-000-200 GaAs MMIC POWER AMPLIFIER, 5-6GHz Features • • • • • • 24 dB Gain typical F20 MESFET technology 24dBm Output Power High, Medium 1, Medium 2 & Low Gain States PAE Max 25% Description The P35-4721-000-200 is a high performance Gallium Arsenide Power Amplifier MMIC. It is

MARCONI power

Abstract: NN12 P35-4721-000-200 MARCONI RF power MARCONI amplifier
Contextual Info: P35-4721-200-000 GaAs MMIC POWER AMPLIFIER, 5-6GHz Features • • • • • • 24 dB Gain typical F20 MESFET technology 24dBm Output Power High, Medium 1, Medium 2 & Low Gain States PAE Max 25% Description The P35-4721-000-200 is a high performance Gallium Arsenide Power Amplifier MMIC. It is

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Abstract: P35-4211-0 P35-4227-0
Contextual Info: P35-4227-0 GaAs MMIC SPDT REFLECTIVE/TERMINATED SWITCH, DC - 6GHz Features • • Broadband performance High Isolation; 40dB typ at 3GHz • Low insertion loss; 0.8dB typ at 3GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical Description

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Abstract: P35-0702R
Contextual Info: P35-0702R GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount package 0.5dB typ at 1GHz Description The P35-0702R is a high performance Gallium Arsenide monolithic single pole double throw RF switch

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Abstract: P35-4232-C06-200
Contextual Info: P35-4232-C06-200 GaAs MMIC 2W SPDT REFLECTIVE SWITCH, DC - 6GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Positive or negative voltage operation • High compression point; 34dBm typ

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Abstract: P35-5140-000-200 MARCONI power
Contextual Info: P35-5140-000-200 HEMT MMIC BROADBAND AMPLIFIER, 20 - 40GHz Features • • • • 21dBm Typical Saturated Output Power 20dB Typical Gain 1.72 x 0.76mm Die Size Low Current Typically <200mA @4.5V Description The P35-5140-000-200 is a high performance 20-40GHz Gallium Arsenide amplifier. This product is intended for

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Abstract: P35-4232-P01-200
Contextual Info: P35-4232-P01-200 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Positive or negative voltage operation • SO8 plastic package

P35-4250

Abstract: NN12 P35-4250-3
Contextual Info: P35-4250-3 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO16 surface mount package 0.7dB typ at 1GHz Description The P35-4250-3 is a high performance Gallium Arsenide single pole four throw RF switch. It is suitable

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

Abstract: NN12 P35-4227-3T
Contextual Info: P35-4227-3T GaAs MMIC SPDT TERMINATED SWITCH, DC - 3GHz Features • Broadband performance • High Isolation; 45dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount plastic package Description The P35-4227-3T is a high performance Gallium Arsenide single pole double throw broadband RF

P35-0702T

Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz MCL 25 NN12
Contextual Info: P35-0702T GaAs MMIC SPDT TERMINATED SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; 0.6dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount package • 50Ω output terminations

MARCONI amplifier

Contextual Info: P35-4720-000-200 GaAs MMIC DRIVER AMPLIFIER, 5-6GHz Features • • • • • 25 dB Gain typical F20 MESFET Technology 21dBm Output Power High & Low Gain States PAE Max 25% Description The P35-4720-000-200 is a high performance Gallium Arsenide Driver Amplifier MMIC. It is

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Abstract: P35-4720-000-200
Contextual Info: P35-4720-000-200 GaAs MMIC DRIVER AMPLIFIER, 5-6GHz Features • • • • • 25 dB Gain typical F20 MESFET Technology 21dBm Output Power High & Low Gain States PAE Max 25% Description The P35-4720-000-200 is a high performance Gallium Arsenide Driver Amplifier MMIC. It is primarily

MCL 29

Abstract: NN12 P35-4211-0 P35-4211-1
Contextual Info: P35-4211-0 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • Low insertion loss; 0.5dB typ at 1GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4211-0 is a high performance Gallium Arsenide monolithic single pole double throw RF switch,

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: MCL 25 NN12 P35-4150-0
Contextual Info: P35-4150-0 MONOLITHIC BROADBAND AMPLIFIER, 2 - 18GHz Features • • • • • • Broadband, cascadable gain block AGC control with gate bias Output power, 15dBm, typical Gain flatness ±0.5dB, typical On chip DC blocking capacitors at input and output

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Abstract: P35-4227-3R
Contextual Info: P35-4227-3R GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 3GHz Features • Broadband performance • High Isolation; 40dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO8 surface mount plastic package Description The P35-4227-3R is a high performance Gallium Arsenide single pole double throw broadband RF

soic14 150

Abstract: NN12 P35-4245-3 SOIC14
Contextual Info: P35-4245-3 GaAs MMIC DPDT REFLECTIVE SWITCH, DC - 2GHz Features • Broadband performance • Low insertion loss; 0.7dB typ at 1GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical • SO14 surface mount package Description The P35-4245-3 is a high performance Gallium Arsenide double pole double throw RF switch. It is

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Abstract: P35-4252-3
Contextual Info: P35-4252-3 GaAs MMIC SP4T TERMINATED SWITCH, DC - 2GHz Features • • • • • Broadband performance Low insertion loss; 0.7dB typ at 1GHz Ultra low DC power consumption Fast switching speed; 3ns typical SO16 surface mount package Description The P35-4252-3 is a high performance Gallium Arsenide single pole four throw RF switch. It is

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Abstract: P35-4100-0
Contextual Info: P35-4100-0 MONOLITHIC BROADBAND AMPLIFIER, 0.05 - 3.5GHz Features • Ultra Broadband • Flat Frequency response with direct gain control • 20dBm output power capability • Input and output matched to 50Ω Description The P35-4100-0 is a high performance monolithic broadband amplifier designed for use in a wide range