MAR-08 TRANSISTOR Search Results

6206a

Abstract: Atmel SAM-ICE ARM at91sam jlink 6206A datasheet multi-ice interface unit idc 20 pin data ribbon connector 6206 JLINK-ARM 6206B
Contextual Info: AT91SAM-ICE . User Guide 6206B–ATARM–04-Mar-08 1-2 6206B–ATARM–04-Mar-08 AT91SAM-ICE User Guide Table of Contents Section 1 Introduction. 1-1

Philips MARKING CODE

Abstract: PBSS4350D PBSS5350D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS4350D NPN BISS transistor Product specification Supersedes data of 2000 Mar 08 2001 Jan 26 Philips Semiconductors Product specification NPN BISS transistor PBSS4350D PINNING FEATURES • High current capabilities

transistor marking zg

Abstract: PBSS4320T PBSS5320T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1997 Mar 12 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A

PBSS4320T

Abstract: PBSS5320T transistor marking zg
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and

Contextual Info: DISCRETE SEMICONDUCTORS DAT PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors Product data sheet 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage VCEsat and

CF001-01

Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
Contextual Info: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon

Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing

XR1011-QH

Contextual Info: 4.5-10.5 GHz GaAs Receiver QFN, 4x4mm R1011-QH March 2008 - Rev 31-Mar-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 1.8 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has

Contextual Info: 4.5-10.5 GHz GaAs Receiver QFN, 4x4mm R1011-QH March 2008 - Rev 31-Mar-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 1.8 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has

LT3500

Contextual Info: LT3500 N- and P-Channel 30V Power MOSFET GENERAL DESCRIPTION FEATURES The LT3500 is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON) ≦42mΩ@VGS=4.5V (N-Ch)

HY27UF082G2A

Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

transistor smd uw

Abstract: mar-08 transistor melexis PIN photodiode sensitivity 850nm PIN photodiode sensitivity 850nm
Contextual Info: MLX75303 Optical Switch SensorEyeC Features High precision light switching level Low temperature dependency Supply voltage range 3V to 5.5V TTL and CMOS compatible Operating temperature -40 up to 125degC Target 0 ppm defects; guarantee <10 ppm defects Solder reflow 260degC, MSL3

w-band

Abstract: CHU3377 PH15 76-77GHz
Contextual Info: CHU3377 RoHS COMPLIANT W-band Multifunction: Multiplier / MPA GaAs Monolithic Microwave IC Description 76. 5GHz IN x3 OUT x2 Tx / PH15 -V +V W-band multifunction block-diagram 20 18 16 14 P_out dBm The CHU3377 is a W-band monolithic multifunction, which integrates an input buffer, a

Contextual Info: KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811(7 LINE) FAX:(07) 821-5815 DATE: Mar.06,2009 FOR MESSRS: SP14Q006-TZA CONTENTS No. ITEM SHEET No. PAGE 1 COVER 7B64PS 2701- SP14Q006-TZA-7

SP14Q002-A1

Abstract: SP14Q002-A1-6 IT7001M mar-06
Contextual Info: KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811 ( 7 LINE) FAX:(07) 821-5815 FOR MESSRS. DATE. Mar.06,2009 CUSTOMER’S ACCEPTANCE SPECIFICATIONS SP14Q002-A1 CONTENTS No. ITEM SHEET No.

Contextual Info: 2014 CATALOG Electrolytic Capacitors （Surface Mount Type Aluminum Electrolytic Capacitors） 2014.7 industrial.panasonic.com/ww/ . Conductive Polymer Hybrid Aluminum Electrolytic Capacitors/ZA Surface Mount Type Series: ZA Type: V High temperature Lead-Free reflow

MN73099HED

Contextual Info: KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 (7 LINE) FAX:(07) 8215815 DATE: Mar.06,2009 FOR MESSRS: CUSTOMER’S ACCEPTANCE SPECIFICATIONS SP14Q006-ZZA CONTENTS No. ITEM SHEET No. PAGE

Marking d12

Abstract: TS78L05 RF transistor Type code SOT-89
Contextual Info: TS78L00 Series 3-Terminal 100mA Positive Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input SOT-23 Pin Definition: 1. Output 2. Input 3. Ground SOP-8 SOT-89 Pin Definition: 1. Output 8. Input 2. Ground 7. Ground 3. Ground 6. Ground 4. N/C

technology inc. DC-DC convert

Contextual Info: Global Mixed-mode Technology Inc. G5561A Quad-Output TFT LCD Bias DC-DC Converter General Description Features „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ The G5561A DC-DC converter provides regulated voltages required by thin-film transistor TFT liquid crystal

TS78L05I

Contextual Info: TS78L00I Series 3-Terminal 100mA Positive Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input SOT-23 Pin Definition: SOP-8 Pin Definition: 1. Output 8. Input 2. Ground 7. Ground 3. Ground 6. Ground 4. N/C 5. N/C 1. Output 2. Input 3. Ground

tc144e

Abstract: transistor tc144e PDTC144EEF PDTC144ET PDTC144EE, PDTC144ET, PDTC144EU PDTC144E PDTC144EE PDTC144EK PDTC144EM PDTC144ES
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC144E series NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2004 Mar 23 2004 Aug 17 Philips Semiconductors Product specification NPN resistor-equipped transistors;

AS7805D

Abstract: AS7805D-E1 AS7809 AS7805T-E1 AS7808T-E1 AS7809D-E1 AS7809T-E1 AS7812D-E1 AS78XX AS7812
Contextual Info: Data Sheet 1A 3-TERMINAL POSITIVE VOLTAGE REGULATOR General Description Features The AS78XX series are three terminal positive regulators designed for a wide variety of applications including local, on-card regulation. • · · The AS78XX are complete with internal current limiting, thermal shutdown protection, and safe-area compensation which make them virtually immune from

Contextual Info: Freescale Semiconductor Technical Data CATV Amplifier Module MHW7205CLN LIFETIME BUY Features • Specified for 77 - and 110 - Channel Loading • Lower DC Current Requirements • Excellent Distortion Performance • Excellent DC Current Stability over Temperature