MAR 105 Search Results

W105

Abstract: ZFL-1000LN amplifier minicircuits 72 vna sot 23 MAV-3 ZHL-2-50P3 MAV-4
Contextual Info: GROUP Amplifier Selection Guide K GAIN dB MIN. MAX'" POWER (dBm) N.F. (dB) 1YP. MAR-1 MAR-2 MAR-3# MAR-4 D C-1000 DC-2000 DC-2000 DC-1000 13.0 8.5 8.0 7.0 + 1.5 +4.5 +10.0 + 12.5 5.5 6.5 6.0 6.5 MAR-6# MAR-7# MAR-8 MAV-1 DC-2000 DC-2000 DC-1000 DC-1000 9.0

mav5

Contextual Info: M onolithic A mplifiers 50* B roadband DC to 2 .5 GHz MAR-SM MAV-SM up to +18 dBm output OFREQ. AIN, dB Typical at MHz MHz MODEL no . 100 1000 2000 MAR-ISM MAR-2SM MAR-3SM MAR-4SM DC-1000 DC-2000 DC-2000 DC-1000 18.5 12.5 12.5 8.3 15.5 12.0 12.0 8.0 11.0

mar-6sm

Contextual Info: MAR+ SERIES MAR SERIES Surface Mount Monolithic Amplifiers 50Ω DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • cascadable • protected by US Patent, 6,943,629 except MAR-6SM and MAR-8SM CASE STYLE: WW107

MAR-6SM

Contextual Info: MAR+ SERIES MAR SERIES Surface Mount Monolithic Amplifiers 50Ω DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • cascadable • protected by US Patent, 6,943,629 except MAR-6SM and MAR-8SM CASE STYLE: WW107

MAV-1

Abstract: ww107 MAV1 SSAN 990-113
Contextual Info: M onolithic A mplifiers 50a B roadband DC to 2 .5 GHz Q MAR-SM MAV-SM up to +17.5 dBm output GAIN. dB Typical at MHz MAXIMUM POWER. dBm note MODEL NO. 100 1000 2000 Min. M AR-ISM MAR-2SM MAR-3SM MAR-4SM D C -1000 DC-2000 DC-2000 D C -1000 18.5 12.5 12.5

6MBI225U-170

Abstract: ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI225U-170 Spec. No. : MS5F 5391 Fuji Electric Co.,Ltd. Matsumoto Factory Mar. 3 ’03 S.Yoshiwatari Mar. 3 ’03 T.Miyasaka Mar.- 3 -’03 K.Yamada T.Fujihira MS5F 5391 1 14 H04-004-07 Revised Records

Contextual Info: M381L1713CT1 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx72 based on 16Mx8 DDR SDRAM Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.0 Mar. 2001 Rev. 0.0 Mar. 2001 M381L1713CT1 184pin Unbuffered DDR SDRAM MODULE Revision History Revision 0.0 (Mar. 2001)

M383L3310CT1

Contextual Info: M383L3310CT1 184pin Registered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx72 based on 32Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 Mar. 2001 Rev. 0.0 Mar. 2001 M383L3310CT1 184pin Registered DDR SDRAM MODULE Revision History Revision 0.0 (Mar. 2001)

mav11 application note

Abstract: 075PH
Contextual Info: M onolithic A m plifiers son B roadband DC to 2 GHz MAR M AV up to +17.5 dBm output G A IN , dB Typical at MHz OFREQ. MHz M O D EL NO. 100 fL 500 1000 2000 M AR-l MAR-2 MAR-3 MAR-4 DC-1000 DC-2000 DC-2000 DC-1000 18.5 17.5 12.5 12.3 12.5 12.2 8.3 8.2 15.5

Contextual Info: M383L1713CT1 184pin Registered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx72 based on 16Mx8 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 Mar. 2001 Rev. 0.0 Mar. 2001 M383L1713CT1 184pin Registered DDR SDRAM MODULE Revision History Revision 0.0 (Mar. 2001)

2MBI300U4E-120

Abstract: ED-4701 MS5F6058 MT5F12959
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI300U4E-120 MS5F 6058 MS5F6058 1 a 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Oct.-25-’05

2MBI75U4A-120

Abstract: 2mbi75u4a120 IGBT 2MBI75U4A-120 FUJI 2MBI75U4A ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI75U4A-120 Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6060 MS5F6060 1 a 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment May.-31 -’06

1MBI600U4B-120

Abstract: ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 1MBI600U4B-120 MS5F 6062 MS5F6062 1 a 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Oct.-25-’05

2MBI150U4B-120

Abstract: ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI150U4B-120 MS5F 6059 MS5F6059 1 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Ind. Content R e c o r d s

2MBI100U4A-120

Abstract: ED-4701 MT5F12959 MS5F6061
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI100U4A-120 MS5F 6061 MS5F6061 1 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Ind. Content R e c o r d s

MAR-2 MMIC

Abstract: mmic mar-6 mmic mar-2 mar 806 M1072 power7 MSA-0285 VV105 WW107 MAR-2
Contextual Info: NON-CATALOG Drop-In Monolithic Amplifier 50Ω MAR-2+ DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • MAR-2+ is equivalent to MSA-0285 • cascadable • protected by US Patent, 6,943,629 except MAR-6+

MAR-2 MMIC

Abstract: mar 806
Contextual Info: NON-CATALOG Drop-In Monolithic Amplifier 50Ω MAR-2+ DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • MAR-2+ is equivalent to MSA-0285 • cascadable • protected by US Patent, 6,943,629 except MAR-6+

MMIC MAR-6

Abstract: MAR-6 MMIC MSA-0285 VV105 WW107 mar 806 marking 02 mmic am
Contextual Info: NON-CATALOG Drop-In Monolithic Amplifier 50Ω MAR-2+ DC to 2000 MHz Features • wideband, DC to 2000 MHz • high gain, up to 32.5 dB @ 100 MHz • low noise • MAR-2+ is equivalent to MSA-0285 • cascadable • protected by US Patent, 6,943,629 except MAR-6+

fma20n50e

Abstract: 20N50E
Contextual Info: DATE DRAWN Mar.-29-'07 CHECKED Mar.-29-'07 CHECKED Mar.-29-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

16n60e

Abstract: marking code EA SMD MOSFET mosfet smd code tc FMB20N50E mosfet marking ke
Contextual Info: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

SQFP208

Abstract: PDI 1284 IEE1384 TDA5056 9398 649 90011
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA7214 Transport MPEG2 source decoder Preliminary specification Supersedes data of 1999 Mar 16 File under Integrated Circuits, IC02 2001 Mar 28 Philips Semiconductors Preliminary specification Transport MPEG2 source decoder

fma16n60e

Abstract: FMA16N60E,16N60E
Contextual Info: DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

16n60e

Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
Contextual Info: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

Contextual Info: 32 SH7265 Group User's Manual: Hardware Renesas 32-Bit RISC Microcomputer SuperH RISC engine Family / SH7260 Series SH7265 R5S72650P200BG R5S72651P200BG R5S72652P200BG R5S72653P200BG Rev.3.00 Mar 2014 Page iiof xxxvi R01UH0472EJ0300 Rev. 3.00 Mar. 27, 2014