MA7D55 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1

MA3D755

Abstract: MA7D55
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5

MA7D55

Abstract: MA3D755
Contextual Info: Schottky Barrier Diodes SBD MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 • Low forward voltage VF

MA7D55

Contextual Info: MA111 Schottky Barrier Diodes SBD MA7D55 Silicon epitaxial planer type (cathode common) Unit : mm For switching power supply 4.6±0.2 9.9±0.3 2.9±0.2 Low forward voltage V F ● TO-220D (full-pack package) with high dielectric strength > 5.0kV ● Lead end to be V cut for easy mounting

MA3D755

Abstract: MA7D55
Contextual Info: Schottky Barrier Diodes SBD MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 4.6 ± 0.2 15.0 ± 0.5 • Low forward rise voltage VF • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV

MA3D755

Abstract: MA7D55
Contextual Info: Schottky Barrier Diodes SBD MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5 • Features 13.7±0.2 4.2±0.2 Solder Dip • Low forward voltage VF

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1

Contextual Info: Schottky Barrier Diodes SBD MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 • Low forward voltage VF

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

MA629

Abstract: MA7U49 220d MA750A MA689
Contextual Info: Diode • Schottky Barrier Diodes SBD (For Power) ■ Fast Recovery Diodes (FRD) Main Characteristics (Ta = 2 5 "C) Category Type No. trr* (A) max (V) typ (ns) (mA) 5 0.55 11 1 I f (AV| (V) Category Package VF Vr MA749/A 40/45 Main Characteristics (Ta = 2 5 °C)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030