MA74 Search Results

741t

Abstract: A741-T A741T MA741T
Contextual Info: mA741-T • jîA741C-A,T,V PIN CONFIGURATION FEATURES EQUIVALENT CIRCUIT • INTERNAL FREQUENCY COMPENSATION A. q,21>t<Iq • SHORT CIRCUIT PROTECTION • OFFSET VOLTAGE NULL CAPABILITY — 1 • EXCELLENT TEMPERATURE STABILITY I _ I IN V E R T . IN PU T

uA747

Abstract: KS 5127 nA747 747DM 50 hz notch filter using gyrator MA747 MA747-I la747 uA747-IC UA747EDC
Contextual Info: mA747 i/ D U AL FREQUENCY-CO M PENSATED O P ER ATIO N A L AM PLIFIER F A IR C H IL D LIN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Th e /¿A747 is a pair of high perform ance m o n o lith ic Operational A m p lifiers constructed using the Fa irch ild Planar* epitaxial process. T h e y are intended fo r a wide

MA3J745E

Abstract: MA745WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745E (MA745WK) Silicon epitaxial planar type For switching • Package  Two elements are contained in one package, allowing highdensity mounting  Low forward voltage VF , optimum for low voltage rectification

stereo to 2.1 converter circuit diagram

Abstract: MA749 a739 19 khz fm stereo decoder circuit MA732 Fairchild linear consumer circuits TD2002 MA7390 MA753 MA796
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C 2 L-C1 TD2002, TD A 2 0 02 A mA703 L -C 3 L-C 4 mA749 MA796 V- B IA S L-C 5 L-C 6 mA753 mA7390 8 1 □ v+ IF IN D E C O U P L IN G IF S U P P L Y D E C O U P L IN G □ - J l FLC O U T L 4 GNDC REG U LA TO R OUT

lc21

Abstract: TD2002 lc46 A1391 A1394 MA7390 MA749 MA753 MA796 TBA530
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C2 L-C1 TD2002, TDA2002A mA703 L-C3 L-C4 MA796 mA749 V- BIAS L-C5 L-C6 mA753 mA7390 8 1 □ v+ IF IN DECOUPLING IF SUPPLY DECOUPLING □ LC OUT - J lF L 4 GNDC REGULATOR OUT □ 5 ^ IF OUT ~ W ~ ] AMP O UT VR1 ^

MA749

Abstract: "Fairchild linear"
Contextual Info: FA IR C H ILD LIN EA R IN TEGRATED CIRCU ITS • mA749 JJA749C E L E C T R IC A L C H A R A C T E R IS T IC S V+ = ±15 V, R L - 5 kfl to Pin 7, T a = 25°C unless otherwise specififjgd CO N DITIO NS para m eter Input Offset Voltage MIN RS = 200 a Input Offset Current

A741C

Abstract: A741A LA741 A741E ha741 ASA 800
Contextual Info: FAIRCHILD LINEAR INTEGRATED CIRCUITS • mA741 HA741C E L E C T R IC A L C H A R A C T E R IS T IC S V s = ±15 V, T A " 25°C unless otherwise specified M IN C O N D IT IO N S P A R A M E T E R S (see definitions) TYP R S < 10 k fi Input Offset Voltage

MA3X721

Abstract: MA3X740 MA721 MA740
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

MA3J744

Abstract: MA744
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J744 (MA744) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 5˚ • Features

Contextual Info: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series connection) • Forward voltage VF , optimum for low voltage rectification

marking m2p

Contextual Info: Schottky Barrier Diodes SBD MA3J741D, MA3J741E (MA741WA, MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η

Contextual Info: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two elements are contained in one package, allowing highdensity mounting • Low forward voltage VF , optimum for low voltage rectification

MA3X721

Abstract: MA3X740 MA721 MA740
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc

MA3X720

Abstract: MA3X748 MA720 MA748
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X748 (MA748) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5˚

MA3J742

Abstract: MA3X716 MA716 MA742
Contextual Info: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (double connection) • Forward voltage VF , optimum for low voltage rectification

104 M3D

Abstract: MA3J745D MA3J745E MA745WA MA745WK
Contextual Info: Schottky Barrier Diodes SBD MA3J745D, MA3J745E (MA745WA, MA745WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward voltage VF , optimum for low voltage rectification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Mini type of MA3X704A (MA704A)

MA3X721

Abstract: MA3X740 MA721 MA740
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

MA3X748

Abstract: MA748 MA2Z720 MS547
Contextual Info: Schottky Barrier Diodes SBD MA3X748 (MA748) Silicon epitaxial planar type Unit : mm + 0.2 For high-frequency rectification 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 1.5 − 0.05 1.45 0.95 + 0.1 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Symbol Rating Unit

MA661

Contextual Info: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55

IR 50

Abstract: JIS C 1102 diodes ir MARKING 103 MA3X721 MA3X740 MA721 MA740
Contextual Info: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series

MA3J745

Abstract: MA3X704A MA704A MA745
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification

MA748

Abstract: UA748HC JUA748 x1sv
Contextual Info: MA748 Operational Amplifier FA IRCHILD A S chlum berger C om pany _Linea^Division_Ogerationa¡_A^ Description Connection Diagram 8-Lead Metal Package Top View The mA748 is a high performance monolithic operational amplifier constructed using the Fairchild Planar Epitaxial