MA558 Search Results

MA3X558

Abstract: MA558
Contextual Info: PIN diodes MA3X558 MA558 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) • Small diode capacitance CD • Large variable range of forward dynamic resistance rf

Contextual Info: PIN diodes MA3X558 MA558 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2.8+0.2 –0.3 M Di ain sc te on na tin nc ue e/ d 2 1 (0.95) (0.95) di p Pl lan nclu ea e se pla m d m des ne ain ain foll

Contextual Info: MA111 PIN Diodes MA558 Silicon epitaxial planer type Unit : mm +0.2 For UHF and SHF bands AGC 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 +0.2 1.45 Mini package, enabling down-sizing of the equipment and automatic +0.1 ● 3 0.4 –0.05 Large variable range of forward dynamic resistance rf

Contextual Info: PIN diodes MA3X558 MA558 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 0.4±0.2 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d • Small diode capacitance CD • Large variable range of forward dynamic resistance rf

MA3X558

Abstract: MA558
Contextual Info: PIN diodes MA3X558 MA558 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 1.50+0.25 –0.05 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

MA3X558

Abstract: MA558 panasonic ma diodes sc-59 Marking
Contextual Info: PIN Diodes MA3X558 MA558 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Rating Unit Reverse voltage (DC) VR 40 V Peak reverse voltage VRM 45 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Operating ambient temperature* Topr −25 to +85

m MA643

Abstract: MA689 ir d10 ir d10-D10 ma752 MA7D50 MA7D61 MA555 MA649 MA652
Contextual Info: Diodes, Triggers • Schottky Barrier Diodes SBD (For Power) Main Characteristics (Ta = 2 5 "C) Type No. Category A A A Vr I f(AV) (V) (A) Main Characteristics (Ta =2 5 °C) Package Category Ir ter * Vf max.(V) typ.(ns) ■ Fast Recovery Diodes (FRD) No.

MA661

Contextual Info: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55

MA629

Abstract: MA7U49 220d MA750A MA689
Contextual Info: Diode • Schottky Barrier Diodes SBD (For Power) ■ Fast Recovery Diodes (FRD) Main Characteristics (Ta = 2 5 "C) Category Type No. trr* (A) max (V) typ (ns) (mA) 5 0.55 11 1 I f (AV| (V) Category Package VF Vr MA749/A 40/45 Main Characteristics (Ta = 2 5 °C)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

MA555

Contextual Info: Diodes, Triggers • Schottky Barrier Diodes SBD (For Power) Type No. Category A A A Main Characteristics (Ta = 2 5 "C) Vr (V) I f (AV) (A) Main Characteristics (Ta = 2 5 °C) Package No. MA749/A 40/45 5 0.55 11 1 T0-220(F) D59 MA7D49/A 40/45 5 0.55 - 1