MA4L784 Search Results
MA4L784 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MA4L78400A | Panasonic | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.1A ML4N1 | Original | 3 |
MA4L784 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 1 4 Symbol VR Peak reverse voltage VRM Forward current (DC) |
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ma4l784 | |
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Contextual Info: MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 • Features 2 0.80±0.05 3 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 3 0.30±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 4 0.05±0.03 |
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ma4l7841008-type | |
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Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm M Di ain sc te on na tin nc ue e/ d For high speed switching For small current rectification 0.020±0.010 2 1 4 1 0.20±0.03 4 3 0.30±0.03 • Absolute Maximum Ratings Ta = 25°C |
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ma4l784 | |
transistor marking N1Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 3 0.30±0.03 ■ Absolute Maximum Ratings Ta = 25°C |
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ma4l7841008-typeskh00101aedtransistor marking n1 | |
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Contextual Info: Schottky Barrier Diodes SBD MA4L784 Silicon epitaxial planar type Unit: mm For high speed switching For small current rectification 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 3 0.30±0.03 ■ Absolute Maximum Ratings Ta = 25°C |
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ma4l7841008-type | |
Schottky diode high reverse voltage
Abstract: diodes ir IR 50 MARKING 103 transistor marking N1
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ma4l784skh00101aedschottky diode high reverse voltagediodes ir+3 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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responsibilixp08081xp08546xp0a554xp0d873+13 | |
MA7D52Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717) |
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ma2c700ma2c700ama2c719ma2c723+7 | |
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
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xp06501txp06531xp06545xp0a554+13 | |
MA716
Abstract: MA7D50 ma741 MA10799
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ma10700ma10701ma10702ma10703+9 | |
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Contextual Info: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3 |
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ma2d760ma3d761ma2d755ma3d756+6 | |
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Contextual Info: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for |
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1008-type1/10th2sb1462l2sd2216l+6 | |
1008 transistorContextual Info: Panasonic 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm These series are transistors and Diodes that are housed in ultra small 4-pin |Q .0 2 0 t0 .0 1 P molded lead-less package of 1.0 mmx0.8 mmx0.6 mm. The PCB mounting area is l/10th of that of conventional Panasonic Mini 3pin packages and high-density integration is possible. And they are designed |
OCR Scan |
1008-typel/10thunrl110unrl210+5 |