2SD2216L Search Results

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm 0.020±0.010 2 0.80±0.05 3 • Features 4 1 1.00±0.05 0.60±0.05 0.30±0.03 Parameter Symbol Rating Unit Collector-base voltage Emitter open

Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 4 1 Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm M Di ain sc te on na tin nc ue e/ d 0.020±0.010 2 4 1 1.00±0.05 Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm M Di ain sc te on na tin nc ue e/ d 0.020±0.010 2 4 1 0.20±0.03 1.00±0.05 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage Emitter open

Contextual Info: 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD2216L 0.020±0.010 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of

Contextual Info: 2SB1462L Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD2216L 0.035±0.005 2 0.80±0.05 3 1 4 0.60±0.05 1.00±0.05 • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 0.80±0.05 3 • Features 4 1 1.00±0.05 0.60±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SB1462L Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD2216L 0.020±0.010 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of

2SB1462L

Abstract: 2SD2216L
Contextual Info: Transistors 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for

1008 transistor

Contextual Info: Panasonic 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm These series are transistors and Diodes that are housed in ultra small 4-pin |Q .0 2 0 t0 .0 1 P molded lead-less package of 1.0 mmx0.8 mmx0.6 mm. The PCB mounting area is l/10th of that of conventional Panasonic Mini 3pin packages and high-density integration is possible. And they are designed