MA49 Search Results

Contextual Info: MA49192-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)40G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: MA49190-118 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)18G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage7.0 I(Oper.) Typ.(A) Oper. Current250m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: MA4967D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.150G P(D) Max. (W).60 Semiconductor MaterialSilicon Package StyleStR-10

MA49156

Abstract: Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron
Contextual Info: MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO WAVEGUIDE, COAXIAL, MICROSTRIP OR STRIPLINE TRANSMISSION

Gunn Diode MA49156

Abstract: MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit MA49000 police radar detector x-band varactor diode MA49159
Contextual Info: M/A-COM SEMICONDUCTOR HE D I 5b4E514 DOOlim 4 I T-ÖJ-II MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO

Contextual Info: MA4957D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.950f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage48 Q Factor Min. f(co) Min. (Hz) Cut-off freq.150G P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: MA49178-118 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power250m Frequency Min. (Hz)18G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: MA4957F Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.950f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage48 Q Factor Min. f(co) Min. (Hz) Cut-off freq.150G P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: MA49193-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power75m Frequency Min. (Hz)40G Frequency Max. (Hz)50G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.5 I(Oper.) Typ.(A) Oper. Current1.4 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

MA49156

Abstract: MA49508 MA49152 MA49104 MA491 gunn diodes MA49618 MA49107 MA49178 Gunn Diode
Contextual Info: M a n A M P icompany Gunn Diodes V 2.00 Part Number Suggested Frequency Range GHz C a se Style Pour 5 mW ^OUT 10 mW Page No. MA49508 - 7 -4 Anode Heat Sink Diodes 8 -1 2 1 2 -1 8 1 8 -2 6 2 6 -4 0 Suggested Frequency Range (GHz) MA49618 30 30 30 138 - MA49628

Gunn Diode MA49156

Abstract: gunn diodes MA49156 MA49148 MA49000 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band
Contextual Info: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is

Contextual Info: MA4950A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage240 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)35 Semiconductor MaterialSilicon Package StyleStR-10 Mounting StyleT

Contextual Info: MA49508 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)9.4G Frequency Max. (Hz)10.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current160m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: MA49177-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power150m Frequency Min. (Hz)26.5G Frequency Max. (Hz)35G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.0 I(Oper.) Typ.(A) Oper. Current1.4 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: MA494QB Pulse Width Modulated Control Circuit FAIRCHILD A Schlumberger Company MIL-STD-883 July 1986— Rev 01 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP Top View The /¿A494QB is a monolithic integrated circuit which in­

Contextual Info: MA49173-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)26G Frequency Max. (Hz)40G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.0 I(Oper.) Typ.(A) Oper. Current1.2 Semiconductor Material Package StyleScrew Mounting StyleT

Contextual Info: MA4950B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage240 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)35 Semiconductor MaterialSilicon Package StyleStR-10 Mounting StyleT

Contextual Info: MA4989 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18.0G Efficiency Min.2.0 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT

Contextual Info: MA49182-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power50m Frequency Min. (Hz)50G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage2.5 I(Oper.) Typ.(A) Oper. Current1.5 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: MA4957E Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.950f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage48 Q Factor Min. f(co) Min. (Hz) Cut-off freq.150G P(D) Max. (W)1.0 Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: MA4988 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power10m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18.0G Efficiency Min.1.0 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT

Gunn Diode MA49156

Abstract: GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156
Contextual Info: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and