MA2SD19 Search Results

Contextual Info: Schottky Barrier Diodes SBD MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5° (0.60) IF(AV) = 200 mA rectification is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 0.01±0.01 5˚

Contextual Info: MA2SD19 Silicon epitaxial planar type For super-high speed switching circuit Unit: mm • Features 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 • SS-Mini type package contained two elements, allowing a rectification of IF = 200 mA • Low forward voltage: VF < 0.47 V at IF = 200 mA

MA2SD19

Contextual Info: Schottky Barrier Diodes SBD MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5° (0.60) IF(AV) = 200 mA rectification is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD190G Silicon epitaxial planar type For super high speed switching • Features M Di ain sc te on na tin nc ue e/ d ■ Package • Forward current (Average) IF(AV) = 200 mA rectification is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD190G Silicon epitaxial planar type For super high speed switching • Features ■ Package • Forward current (Average) IF(AV) = 200 mA rectification is possible

MA2SD190G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD190G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching • Features ■ Package • Forward current (Average) IF(AV) = 200 mA rectification is possible

Contextual Info: Schottky Barrier Diodes SBD MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5° (0.60) IF(AV) = 200 mA rectification is possible

MA2SD190G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD190G Silicon epitaxial planar type For super high speed switching • Features ■ Package • Forward current (Average) IF(AV) = 200 mA rectification is possible

MA2SD19

Contextual Info: Schottky Barrier Diodes SBD MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 0.01±0.01 5˚ (0.60) (0.60) 0.80±0.05 (0.80) • Forward current (Average) IF(AV) = 200 mA rectification is possible

MA2SD19

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 0.01±0.01 5˚

MA2SD19

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.80+0.05 –0.03

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 0.01±0.01 5˚ (0.60) (0.80) 1.20+0.05

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

S-Mini

Abstract: SSMini s-mini 2-pin package
Contextual Info: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA716

Abstract: MA7D50 ma741 MA10799
Contextual Info: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742

Contextual Info: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3

zener diode SMD marking code 27 4F

Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C