MA0217 Search Results

Unitrode Semiconductor

Contextual Info: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W

Contextual Info: UES1304SM UES1305SM UES1306SM SURFACE M OUNT RECTIFIERS High Efficiency, 7 A FEATURES DESCRIPTION • Small Convenient Surface Mount Package For use in high frequency power switching circuits, the UES1304SM series is specifically designed for surface mount applications when board space and surface

UM7108

Abstract: MICROWAVE DIODE CORP UM7006 UM7000 UM7001 UM7002 UM7100 UM7101 UM7102 UM7200
Contextual Info: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W

2N6137

Abstract: unijunction application note
Contextual Info: 2N6137 PUTs Military, Planar, TO-18, Hermetic / - a s ' - o FEATURES • Available as JAN and JANTX types per MIL standard 19500/493 • — to -f-125’ 0 Temperature Range for Timing and Oscillator Circuits • l , < l V A a t T = -55»C I , > 40*A at T = +125'C

UGB-10

Abstract: unitrode uge-5 UGB10 UGF25 UGD-10
Contextual Info: MICROSEMI CORP/ WATERTOWN W T ' ì b a GG1E301 7^2 M U N I T UGB, UGD, UGE, UGF„SERIES SQE RECTIFIER ASSEMBLIES 7 ^3-3 'V ST High Voltage Doorbell Modules Standard and Fast Recovery FEATURES • Current Ratings: to 10A • PIV: 2.5 kV to 10kV • Recovery Times: to 500ns

GHS linker

Abstract: V55PI Users Manual Instruction U10710E RX83 VR4102 V810 024 b01 V830 VR4100 U10661E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BS421

Abstract: Unitrode Semiconductor transistor t220
Contextual Info: n i C R O S E M I CO RP/ lilATERTOUN 5ÜE D • T B H T T b B G G l E l S h STD « U N I T BISYN SYNCHRONOUS RECTIFIER U BS421 For Low-Voltage < 5.0V Loads FEATURES • Very Low On Resistance, Typically T- ? s-~ / 9 DESCRIPTION The BISYN is a bipolar junction transistor specifically designed to perform the rectifying

GHS linker

Abstract: smp830 U10710E U10661E V55PI Users Manual Instruction V810 V830 VR4100 AP7073 V55PI
Contextual Info: User’s Manual µSAP30100-B01 µSAP703000-B01 µSAP705100-B01 µSAP70732-B01 MH/MR/MMR Middleware Applicable devices µSAP30100-B01 : µSAP703000-B01 : µSAP705100-B01 : µSAP70732-B01 : Document No. U10338EJ4V0UM00 4th edition Date Published September 1998 J CP(K)

k 2101 MOSFET

Abstract: 2N6789
Contextual Info: POWER MOSFET TRANSISTORS IK 200 Volt, 0.80 Ohm N-Channel 2N679° DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

smp830

Abstract: complite application note and datasheet nec V830 mcu V810 V821 MA021 LR 3441 R7 V831 UPD70732 V800
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

LR 3441

Abstract: V800 V810 V821 V830 V831 B-114B
Contextual Info: User’s Manual µSAP705100-B03, µSAP70732-B03 JPEG Middleware Applicable Devices µSAP705100-B03: V830 familyTM µSAP70732-B03: V810 familyTM Document No. U11052EJ4V0UM00 4th edition Date Published May 1999 J CP(K) Printed in Japan 1996 [MEMO] 2 User's Manual U11052EJ4V0UM00