2N679 Search Results

2N679 Datasheets (160)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N679	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	79.98KB	1
2N679	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	83.31KB	1
2N679	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	154.11KB	1
2N679	Unknown	GE Transistor Specifications	Scan	PDF	39.5KB	1
2N679	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	151.88KB	1
2N679	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.24KB	1
2N679	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	93.04KB	1
2N679	Unknown	Vintage Transistor Datasheets	Scan	PDF	53.7KB	1
2N679	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	92.2KB	1
2N6790	Fairchild Semiconductor	3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET	Original	PDF	83.1KB	7
2N6790	International Rectifier	HEXFET TRANSISTORS	Original	PDF	135KB	7
2N6790	Intersil	TRANS MOSFET N-CH 200V 3.5A 3TO-205AF	Original	PDF	53.46KB	7
2N6790	Microsemi	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V TO-205AF	Original	PDF		7
2N6790	Semelab	N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF	12.94KB	1

2N6790	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF	231.69KB	6
2N6790	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF	102.24KB	1
2N6790	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF	44.22KB	1
2N6790	Motorola	Switchmode Datasheet	Scan	PDF	41.76KB	1
2N6790	Motorola	European Master Selection Guide 1986	Scan	PDF	59.59KB	1
2N6790	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF	638.03KB	19

...

2N679 Price and Stock

Filter by Manufacturer

Select Manufacturer


Harris Semiconductor 2N6792 2N6792
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2N6792		6,839		219	1 - 10 - 100 - 1000 $1.52 10000 $1.44	Buy Now
	2N6792		4,000		219	1 - 10 - 100 - 1000 $1.52 10000 $1.44	Buy Now
Rochester Electronics	2N6792		10,903		1	1 - 10 - 100 $1.37 1000 $1.22 10000 $1.15	Buy Now
Harris Semiconductor 2N6792TX 2N6792TX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2N6792TX		335		39	1 - 10 - 100 $9.15 1000 $8.19 10000 $7.70	Buy Now
Rochester Electronics	2N6792TX		335		1	1 - 10 - 100 $7.32 1000 $6.55 10000 $6.16	Buy Now
International Rectifier 2N6790 Trans MOSFET N-CH 200V 3.5A 3-Pin TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2N6790		1		1	1 $15.80 10 $15.80 100 $15.80 1000 $15.80 10000 $15.80	Buy Now
Arrow Electronics	2N6790		1	22 Weeks	1	1 $15.80 10 $15.80 100 $15.80 1000 $15.80 10000 $15.80	Buy Now
Quest Components	2N6790		8			1 $16.54 10 $14.70 100 $14.70 1000 $14.70 10000 $14.70	Buy Now
Infineon Technologies AG 2N6796JANTX - Bulk
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N6796JANTX	Bulk				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc GROUPADATA/JANTXV2N6796 2N6796JANTXV GROUP A DATA - Bulk (Alt: JANTXV2N6796/GROUPADATA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	GROUPADATA/JANTXV2N6796	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 2N679 price and stock on Findchips.com

2N679 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6796U Abstract: 2N6796 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)	Original	mil-prf-19500/557 2n6796 2n6796u 10vdc +230vdc t4-lds-0047	PDF
2N6796 Abstract: TB334 Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor	Original	2n6796 o-205af tb334	PDF
2N6790 Abstract: TB334 Contextual Info: 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching	Original	2n6790 o-205af tb334	PDF
Contextual Info: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET ENHANCEMENT N - CHANNEL 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 100V 5.08 (0.200)	Original	2n6796 o-205af	PDF
lts 542 Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B Contextual Info: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds	OCR Scan	2n6790 92cs-3374i 2n6796 o-2i35af +10o-205af 2n6800 t0-205af lts 542 lts 543 lts 542 internal diagram 2n6756 lh0063 qpl-19500 transistor c 557 b	PDF
2N6794 Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR Contextual Info: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds	OCR Scan	2n6794 2n6796 o-2i35af o-205af +132n6800 t0-205af 2n6802 mil-s-19500/2n6794 jantx fllnm 80 3v 4 channal relay fllnm qpl-19500 lh0063 transistor c 557 b 600v p-channel enhancement mode power mosfet 2n6796 ir	PDF
2N6796 Contextual Info: MOTORCLA SC XSTRS/R F 12E D \| fc.3b?554 QGflbbbS S \| 2N6796 M A X IM U M RATINGS Symbol Value U nit Drain-Source Voltage Vd s s 100 Vdc Drain-Gate Voltage Rq s = 1.0 m fi Vd g r 100 Vdc Vg s ±20 Vdc Id 8.0 32 Rating Gate-Source Voltage CASE 79-05, STYLE 6	OCR Scan	2n6796 o-20saf	PDF
2N6798 Abstract: IRFF230 Contextual Info: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V	Original	irff230 2n6798 o-205af	PDF
Contextual Info: 2N6798 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	2n6798 o205af 11-oct-02	PDF
2n6798 Abstract: 2N6798L 2N6798-JQR-B Contextual Info: 2N6798 MECHANICAL DATA Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES	Original	2n6798 2n6798-jqr-b 2n6798l 2n6798lcc4 +42n6798lcc4-jqr-b 2n6798smd 2n6798smd-jqr-b o276ab	PDF
Contextual Info: • 4302E71 QDS37bb T3T ■ HAS 2N6790 HARRIS N -Channel Enhancem ent-Mode Power MOS Field-Effect Transistor August 1991 Features Pa ckage T 0 -2 0 5 A F BOTTOM VIEW • 3.5A, 2 0 0 V * rD S o n = 0 . 8 0 • S O A is P o w e r- D is s ip a t io n Lim ited	OCR Scan	4302e71 qds37bb 2n6790 lh0063	PDF
Contextual Info: 4302271 0053701 m b • HAS 2N6796 2 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features TO-205AF BOTTOM VIEW • 8.0A, 100V • rDS(on = 0 .1 8 « • SOA is Power-Dissipation Limited SOURCE • Nanosecond Switching Speeds	OCR Scan	2n6796 o-205af lh0063	PDF
2N6790 Abstract: TB334 Contextual Info: 2N6790 Data Sheet November 1998 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high	Original	2n6790 tb334	PDF
1RF9130 Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120 Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 2N6790	OCR Scan	jantx2n6782 jantx2n6784 jantx2n6786 jantx2n6788 +16jantx2n6790 jantx2n6792 jantx2n6794 jantx2n6796 jantx2n6798 jantx2n6800 1rf9130 jantx2n1800 jan2n1793 2n6849 2n1915 2n6845 563 j 400v jan2n3095 t0-209ac irff9120	PDF

2N6798 Abstract: 2N6798U Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)	Original	mil-prf-19500/557 2n6798 2n6798u 10vdc +277vdc t4-lds-0049	PDF
2N6790 Abstract: IRFF220 Contextual Info: 2N6790 IRFF220 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING	Original	2n6790 irff220 o-205af	PDF
2n6789 Contextual Info: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7\| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability	OCR Scan	c13m7cit qg1g54 2n6789 2n6790	PDF
2N6796 Abstract: 2N6795 Contextual Info: POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel FEATURES • • • • • ITX 2N6795 JTX, JTXV 2N6796 DESCRIPTION The U nitrode power M O SFET design utilizes the m ost advan ce d technology available. This efficien t design a ch ieves a very low Rosiom and a high transconductance.	OCR Scan	2n6795 2n6796	PDF
2N6799 Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosnm and a high transconductance. FEATURES	OCR Scan	2n6799 2n6800	PDF
2N6788 Abstract: 2n6790 Contextual Info: 2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and	Original	2n6788 2n6790 mil-prf-19500/555 t4-lds-0164	PDF
2N6796 Contextual Info: 2N6796 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	2n6796 o205af 11-oct-02	PDF
2n6798 jantx Abstract: 2N6798 IH0063 2N6756 QPL-19500 Contextual Info: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited	OCR Scan	2n6798 2n6796 o-2i35af o-205af +82n6800 t0-205af 2n6802 mil-s-19500/2n6798 jantx ih0063 2n6756 qpl-19500	PDF
2N6792 JANTX Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904 Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds	OCR Scan	2n6792 2n6796 o-2i35af o-205af +92n6800 t0-205af 2n6802 mil-s-19500/2n6792 jantx c055 lh0063 qpl-19500 2n6904	PDF
Contextual Info: 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage	Original	2n6790u mil-prf-19500/555 o-205af t4-lds-0229-1	PDF

2N679 Search Results

2N679 Datasheets (160)

2N679 Price and Stock

Harris Semiconductor 2N6792

Harris Semiconductor 2N6792TX

International Rectifier 2N6790

Infineon Technologies AG 2N6796JANTX

Microchip Technology Inc GROUPADATA/JANTXV2N6796

2N679 Datasheets Context Search

2N6796U

2N6796

2N6790

lts 542

2N6794

2N6796

2N6798

2n6798

2N6790

1RF9130

2N6798

2N6790

2n6789

2N6796

2N6799

2N6788

2N6796

2n6798 jantx

2N6792 JANTX