MA 6116A Search Results

6116A

Abstract: CY6116A-55DMB 6117a MA 6116A CY6116A CY6117A 6116A-55
Contextual Info: 6116A: 11/8/89 Revision: Monday, November 8, 1993 CY6116A CY6117A Features Pin Configurations DIP/SOJ Top View A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 25 WE OE A2 6 24 OE 19 A10 NC 7 23 A10 18 CE NC 8 22 NC 21 NC 8 17 I/O7 9 16 I/O6 10 I/O2 11 14 I/O4 GND 12

6116A25

Abstract: CY6116A CY6117A CY6116A-55DMB
Contextual Info: 6116A: 11/8/89 Revision: Monday, November 8, 1993 CY6116A CY6117A Features Pin Configurations DIP/SOJ Top View A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 25 WE OE A2 6 24 OE 19 A10 NC 7 23 A10 18 CE NC 8 22 NC 21 NC 8 17 I/O7 9 16 I/O6 10 I/O2 11 14 I/O4 GND 12

UDN-6118

Abstract: 18S20P UDN6118 UDN6116A UDN6116A-1 UDN6118A-1 UDN6118LW UDN6118R-2 A10592 UDN6116A-2
Contextual Info: k FLU O RESC EN T D ISP LA Y D R IV E R S U D N 6116A /R i~ r rr -\> -NC NC J6~| J5~1 n T -> - J 4 l J3~l r~4 -1>-:-r i * - 1>- J 2 | r~6~ - > - j D [~7* - -7b Vbb _9~j

HM6116ALSP-12

Contextual Info: HM6110A Series Maintenance Only 2 0 4 8 -word x 8-bit High Speed Static CMOS RAM • FURTURES • High speed: Fast Access Time • Low Power Standby and Low Power Operation 120ns/150ns/200ns max. Standby: HM 6116AP Series 100fiW (typ.) 5fxW (typ.) (L-version)

MA 6116A

Abstract: 8116A
Contextual Info: CY6116A CYPRESS SEMICONDUCTOR 2048 x 8 Static R/W RAM Features Functional Description • Autom atic power-down when deselected T h e C Y 6116A is a high-perform ance C M O S static R A M organized as 2048 w ords by 8 bits. E asy m em ory expansion is provided by an active L O W chip e nable

6118a

Abstract: 6116 38 PIN vacuum fluorescent display UDN-6118A UDN6118A-1 UDN-6118A-1 UDN-6100A UDN-6116A UDN-6116A-2 UDN-6116R-2
Contextual Info: SERIES UDN-6100A AND UDN-6100R FLUORESCENT DISPLAY DRIVERS SERIES U D N -6100A A N D U DN-6100R FLUORESCENT D ISPLA Y DRIVERS FEATURES • D i g i t o r S e g m e n t D rive rs •Lo w I n p u t C u r re n t • I n t e g r a l O u t p u t P u ll-D o w n R e s is to rs

MA 6116A

Contextual Info: 6116 6118 VND FLUORESCENT D ISPLAY DRIVERS Consisting of six or eight NPN Darlington output stages and the associated common-emitter input stages, these drivers are designed to interface between low-level digital logic and vacuum fluorescent displays. All devices are capable of driving the digits and/or segments

Contextual Info: 6116 6118 AND FLUOBESCENT D ISPLAY D RIVERS Consisting of six or eight NPN Darlington output stages and the associated common-emitter input stages, these drivers are designed to interface between low-level digital logic and vacuum fluorescent displays. All devices are capable of driving the digits and/or segments

6117a

Abstract: MA 6116A dc 6117a CY6116A-55DMB
Contextual Info: CY6116A CY6117A CYPRESS SEMICONDUCTOR Functional Description Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20 ns Low active power — 550 mW 1 Low standby power — 110 mW TTL-compatible inputs and outputs Capable of withstanding greater

UCN5891A

Abstract: UDN6118A UCN5810A 9643 UCN5818AF UCN5890A UDN6116A UCN5895EP source drivers vacuum fluorescent display
Contextual Info: BIMOS SERIAL-INPUT, LATCHED HIGH-CURRENT SOURCE DRIVERS UCN5890A, UCN 5891A, A N D UC N 5895A /EP FEATURES UCN5890/91/95A • 3.3 MHz Minimum Serial Data Input Rate U C N 5 8 9 5 EP GROUND ■ Low-Power CM O S Logic and Latches CLOCK S E R IA L DATA IN ■ Output TransientSuppression Diodes

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

6116A

Abstract: CDM6116 CDM6116ACD/3
Contextual Info: HARRIS SEMI COND S E C T OR 37E D 43G2271 GQ2bSn T I HAS High-Reliability CM OS LSI Devices _ CDM6116AC/3 A7 -A6 -AS-A4 -A3 -A2-Al -AO — X/OI -1/02 -1/03 -vss — High-Reliability CM OS 2048-Word by 8-Bit LSI Static RAM Features: • Fully static operation

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

6116A

Abstract: CDM6116
Contextual Info: G E SOLID STATE 17E D • 3ä75Gfil QQES027 =! Hlgh-Reliability CMOS LSI Devices - CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: ■ F u lly sta tic op eratio n ■ S ingle p o w e r sup ply: 4.5 to 5.5 V

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

6116asp

Abstract: MA 6116A M6116a 6116al 6116A
Contextual Info: HM6116A Series Maintenance Only 2048-word * 8-bit High Speed Static CMOS RAM • FURTURES H M 6 1 16 AP Series • High speed: Fast Access Tim e • Low Power Standby and 120ns/150ns/200ns m ax. Standby: 100/nW (typ .) Operation: 15mW (typ .) (f = 1 M H z)

HM6116AP-15

Abstract: HM6116ASP-15 HM6116ALSP-15 HM6116A hm6116asp-12 HM6116A-20 HM6116ALP-15 HM6116ALP-12 HM6116AP-20 hm6116asp
Contextual Info: HM6116A Series Maintenance Only 2 0 4 8 - w o r d * 8 - b i t H ig h S p e e d S t a t i c C M O S RAM • FURTURES • High speed: Fast Access Time • Low Power Standby and Low Power Operation HM6116 AP Series 120ns/150ns/200ns max. Standby: 100//W (typ.)

Contextual Info: ^ ä CY6116A CY6117A 5 s : f'Y PPF’RÇ 'W - SEMICONDUCTOR 2048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected T h e C Y b t 16A andC Y 6117A arehigh-perform anceC M O S static R A M sorganizedas 2048 w ords by 8 bits. Easy m em ory expan­

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

HY6116A-10

Abstract: HY6116A
Contextual Info: D HY UN DA I E L E C T R O N I C S • 4b7S0flfl Q Q D Q 4 Q T b ■ HYNK M211201B-APR91 DESCRIPTION FEATURES The HY6116A is a high speed, low power, 2,048 words by 8-bit CM O S static RAM fabri­ cated using high performance CM OS process technology. This high reliability process cou­

Contextual Info: High-Reliability CMOS LSI Devices CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: • F u lly s tatic operation • S ingle po w e r supply: 4.5 to 5.5 V ■ A ll inpu ts and ou tputs d ire c tly TTL com patible ■ 3-state ou tputs

6121a

Abstract: 1N 414 B
Contextual Info: ^ | j^ J " L J t ^ g [ X l TRANSIENT VOLTAGE SUPPRESSORS (cont. (E LE C T R IC A L C H A R A C T E R IS T IC S @ 25 C) TEL: 805-498-2111 FAX : 805-498-3804 500 WATT AXIAL LEAD - HERMETIC QPL 1 N 6 1 0 2 A T H R U 1N 6137A B ID IR E C T IO N A L D evice

Contextual Info: H Y 2 K6x 81- B it1C M6OA /L S Static R A M ▲ £ £ £ £ £ ! DESCRIPTION FEATURES T h e H Y 6 1 1 6 A / L is a h igh speed, low power, 2,048-w ord by 8-bit C M O S static R A M fa b r i­ c a te d using h ig h - p e r f o r m a n c e C M O S process technology. This high reliability process co u p le d

ina28-terminal

Abstract: CDM6116 CDM6116AC 2CS-40498 CDM6116ACD/3
Contextual Info: High-Reliability CMOS LSI Devices CDM6116AC/3 High-Reliability CMOS 2048-Word by 8-Bit LSI Static RAM Features: • F u lly s ta tic o p e ra tio n ■ S in g le p o w e r s u p p ly : 4.5 to 5.5 V ■ AH in p u ts a n d o u tp u ts d ire c tly TT L c o m p a tib le