MA 166S Search Results

32 bit microcontroller using vhdl xc161

Abstract: ct 9372 stk 412 -750 80C166-type XC161 PEGASUS
Contextual Info: U s er ’s Ma n ua l, V 2. 2, S ep . 20 03 XC161 16-Bit Single-Chip Microcontroller with 166SV2 Core Vo l u m e 1 o f 2 : Sy s t e m U n i t s Pre-release M i c ro c o n t ro l l e rs N e v e r s t o p t h i n k i n g . Edition 2003-09 Published by Infineon Technologies AG,

NTD18P03L

Abstract: BZX84B18VLT1G transistor ECG 152 LED-350mA L2 diode SOD123 ECG ic manual dil 00-40-f MA 166s MBRS1540T3G NCP3066
Contextual Info: NCP3066, NCV3066 Up to 1.5A Constant Current Switching Regulator for LEDs with ON/OFF Function The NCP3066 is a monolithic switching regulator designed to deliver constant current for powering high brightness LEDs. The device has a very low feedback voltage of 235 mV nominal which is

brushless motors cd rom

Abstract: ICL 7071 LB1668 "Zener Diodes" sanyo LB1667 transistor Z2 7W07b
Contextual Info: Ordering number : ENN4944A Monolithic Digital 1C LB 1668, 1668M, LB 1667, 1667M ISA /tm l Two-Phase Unipolar Drive Brushless Motor Drivers Overview Package Dimensions The LB 1668 Series are 2-phase unipolar drive brushless motor drivers that feature a wide usable voltage range and

NTD18P03L

Abstract: BZX84B18VLT1G transistor ECG 152 ecg 3066 16SP150M rohm diode dpak soldering PART NUMBER OF IC NCP3066 166SP150M transistor M22 marking a3 sot 343
Contextual Info: NCP3066, NCV3066 Up to 1.5A Constant Current Switching Regulator for LEDs with ON/OFF Function The NCP3066 is a monolithic switching regulator designed to deliver constant current for powering high brightness LEDs. The device has a very low feedback voltage of 235 mV nominal which is

25CC

Abstract: P4C163 P4C163L
Contextual Info: PERFORMANCE SEMI CONDUCTOR 20E D • 7 0 b 2 5 e! 7 00005b3 P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS SCRAMS T 3 ^ - a ■ s - i a FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply, 10 |iA Typical Current Common I/O Full CMOS, 6T Cell

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

Contextual Info: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAMS SCRAMS FEATURES Single Pow er Supply - 5V ± 10% • Full CM OS, 6T Cell ■ High Speed (Equal A ccess and Cycle Tim es) -1 0 /1 2 /1 5 /2 0 /2 5 ns (Com m ercial) ■ Separate Input and Output Ports Three-State Outputs

L7C164PC20

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 yiW typical

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 pW typical □ Data Retention at 2 V for Battery

d 1548

Abstract: K 1548 P4C1298 CEFH1
Contextual Info: PERFORMANCE SEMICONDUCTOR 20E D • 70^55*17 OOGObS? 1 ■ P4C1298/P4C1298L, P4C1299/P4C1299L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 7$ T FEATURES ■ High Speed (Equal A ccess and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (Military)

MA 166s

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E D 70^25^7 0001530 fi • P3C3188/P3C3188L SUPER FAST 16K x 4 STATIC CMOS RAMS SCRAMS 7$ r a iL O G Ä M iW — - FEATURES I Single 3.3V +0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation ■ Three-State Outputs

Contextual Info: L 7 C 164/166 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns

Contextual Info: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical

Contextual Info: Lattice G A L 2 0 X V 1 0 High-Speed E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES l/CLK □ * HIGH PERFORMANCE E2CMOS TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax =100 MHz — 7 ns Maximum from Clock Input to Data Output

L7C164CC20

Abstract: L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: L7C164CC20 L7C164WC12 L7C164WC15 L7C164WC20
Contextual Info: L7C164/166 16K x 4 Static RAM L7C164/166 DEVICES INCORPORATED 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Common I/O q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum q Low Power Operation

s2ld

Abstract: MA 166s
Contextual Info: . i O <I!!H € •Hi L 7 C 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns

MA 166s

Abstract: Analog devices branding codes DAC87-CBI-V AD DAC80 Application Note DAC80 DAC85 DAC87 b 803 a Analog devices branding codes d Thin Film Resistors SiCr
Contextual Info: I ANALOG □ IDEVICES Wide Temperature Range 12-Bit 1C D/A Converter PRELIMINARY TECHNICAL DATA FEATURES Pin-Coirnpatible with AD DAC80 and AD DAC85 3 Chip,. High Reliability Construction Low Power Dissipation Laser-Trimmed to High Accuracy: ±3/4LSB Max Nonlinearity, -55°C to +125°C

Contextual Info: L7C1R4/1RR *- — • — - - L 7 C 134 MGG 16K x 4 Static RAM JbVUI-S ■ :XJHHO -■A Ih □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E D • ?QbaST7 OOGObS? P4C1298/P4C1298L, P4C1299/P4C1299L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 7$ 1 ■ T -W fr-Ä a - T FEATURES ■ High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (M ilitary)

ELAP CM 140

Contextual Info: •■■MB L 7 C 1 6 4 /1 6 6 mm 1 6 K x 4 Static RAM DEVICES INCORPORATED [ FEATURES DESCRIPTION □ 16K x 4 Static RAM w ith C om m on I/O □ A uto-Pow erdow n Design □ A dv an ced CM OS Technology □ H ig h Speed — to 12 ns m axim um □ L ow Pow er O peratio n

Contextual Info: L7C164/166 \}\v s DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 |iW typical □ Data Retention at 2 V for Battery

Contextual Info: L7C164/166 16K x 4 Static R A M FEATURES DESCRIPTION □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 iW typical

Contextual Info: PERFORMANCE SEMICO NDU CTOR 20E D 70^55^7 Q00Ü5S3 2 P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS A - :- FEATURES Full CMOS, 6T Cell • Single 5V±10% Power Supply High Speed (Equal Access and Cycle Times)