MA 156 Search Results

GS8161Z18AT-300

Abstract: gs816
Contextual Info: Preliminary GS8161Z18/36AT-300/275/250/225/200 18Mb Pipelined and Flow Through Synchronous NBT SRAM Flow Through 2-1-1-1 1.8 V 2.5 V 300 345 300 340 275 320 275 315 250 295 250 285 230 265 225 260 mA mA mA mA tKQ tCycle 5.0 5.0 5.25 5.25 5.5 5.5 6.0 6.0 6.5

Contextual Info: Broadband Power GaAs Chips Specifications T ^ = 25°C CF003-01 CF005-01 CF010-01 Ion Implanted Ion Implanted Ion Implanted Active Layer Frequency (GHz) Units Linear Power Gain Vqs = 6.0 V, Iq 3 = 80 mA Vqs = 6-0 V, Iqs = 160 mA VDS = 6.0 V, lDS = 300 mA

Contextual Info: 111 Surface M ount Devices Zener Diodes, SOD-87 2.3W (cont.) Zener Voltage Vz a tlz mA V Type Min Maximum Differential Resistance rdfffat 'z Max a Maximum Reverse Current lR at V R Maximum Temperature Coefficient Sz a tlz mA %/*e mA M-A 1' BZD27C27 BZD27C30

Contextual Info: Extract from the online catalog ILB IB AI4 AO2 Order No.: 2878777 Inline Block IO analog input/output module, INTERBUS, inputs: 0-20 mA, 4-20 mA, ±20 mA, 0-5 V, ±5 V,0-10 V, ±10 V, Pt 100, Pt 1000,

lg ni1000

Abstract: lg Ni1000 temperature sensor laser kss NI1000 Phoenix Ni1000 2-wire PT500 RTD
Contextual Info: Extract from the online catalog ILB PB AI4 AO2 Order No.: 2878874 Inline Block IO analog input/output module, PROFIBUS, inputs: 0-20 mA, 4-20 mA, ±20 mA, 0-5 V, ±5 V,0-10 V, ±10 V, Pt 100, Pt 1000, Ni

LM385D

Contextual Info: LM285-1.2, LM385-1.2, LM385B-1.2 MICROPOWER VOLTAGE REFERENCES SLVS075C – APRIL 1989 – REVISED JULY 1999 D D D D D D Operating Current Range – LM285 . . . 10 µA to 20 mA – LM385 . . . 15 µA to 20 mA – LM385B . . . 15 µA to 20 mA 1% and 2% Initial Voltage Tolerance

Contextual Info: SGS-THOMSON SURFACE MOUNT DEVICES ^ 7# Ü O M tH LIO TûK » GENERAL PURPOSE & INDUSTRIAL ZENER DIODES Type V ZT /IZT * rZ T ''Z T * 'Z T * 'z k ^zk “ VZ |R I V r T am b 25°C min max max 1 j max mA = (Í2) (mA) max max (10-4/°C ) •ZM >ZSM (V) (mA)

Q62702-F788

Contextual Info: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.

transistor zo 607 MA 7S

Abstract: zo 607 MA 7S zo 607 MA 7s 524 ZO 607 MA 7A zo 607 MA 7A 435 ZO 607 MA 7A 523 ZO 607 MA 7A 524 BFQ181 zo 607 MA 7A 437 cerec
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ181 Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. • / t = 8 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

Transistor BFR 97

Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
Contextual Info: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

Contextual Info: TOSHIBA T6A11A JT 6 A 1 1AX-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT T• f i A m 1a 1u mA mg SILICON MONOLITHIC I T■ ^Am mA m 1a 1u mA m ^Y m- A < ; m m«# m T 6A 1 1A , JT6A11 A X -A S CM O S 1 CHIP LSI FOR LCD ELECTRONIC CALCULATOR The T6A11A, JT6A11 AX-AS is a 1 chip microcomputer for

Contextual Info: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

TL431CPKR

Abstract: lm317 tl431a DIP TL431IPKR TL431CLPM TL431ACDR TL431CDR TL431ACLPR TL431ILPM TL431
Contextual Info: TL431, TL431A ADJUSTABLE PRECISION SHUNT REGULATORS SLVS005L – JULY 1978 – REVISED AUGUST 2000 D D D D D D Equivalent Full-Range Temperature Coefficient . . . 30 ppm/°C 0.2-Ω Typical Output Impedance Sink-Current Capability . . . 1 mA to 100 mA Low Output Noise

Contextual Info: TL1431 PRECISION PROGRAMMABLE REFERENCE SLVS062H – DECEMBER 1991 – REVISED JANUARY 2002 0.4% Initial Voltage Tolerance 0.2-Ω Typical Output Impedance Fast Turnon . . . 500 ns Sink Current Capability . . . 1 mA to 100 mA Low Reference Current REF Adjustable Output Voltage . . . VI(ref) to 36 V

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Document order number: MPC17531A Rev 1.0, 04/2004 SEMICONDUCTOR TECHNICAL DATA Advance Information 17531A 700 mA Dual H-Bridge Motor Driver with 3.0 V Compatible Logic I/O 3.0 V LOGIC COMPATIBLE 700 mA DUAL H-BRIDGE MOTOR DRIVER IC

R4-3117

Abstract: r-4-3117 s38 marking X1869 V6108-52FI QFP-52pin Y745 850C QFP52 VLCD12
Contextual Info: R EM MICROELECTRONIC-MARIN SA V6108 40 Segment Static LCD Driver Features Typical Operating Configuration n Serial data input / output n Low dynamic current, 5 mA max. n Low standby current, 1 mA max. n Separate input and display voltages n Wide power supply range:

adp5034

Contextual Info: Dual 3 MHz, 1200 mA Buck Regulators with Two 300 mA LDOs ADP5034 Data Sheet FEATURES The high switching frequency of the buck regulators enables tiny multilayer external components and minimizes the board space. When the MODE pin is set to high, the buck regulators operate in

NV220

Contextual Info: TL1431 PRECISION PROGRAMMABLE REFERENCE SLVS062E – DECEMBER 1991 – REVISED JANUARY 2000 D D D D D D D PACKAGE TOP VIEW 0.4% Initial Voltage Tolerance 0.2-Ω Typical Output Impedance Fast Turnon . . . 500 ns Sink Current Capability 1 mA to 100 mA Low Reference Current (REF)

Contextual Info: 10-/12-/14-Bit, 1200 MSPS DACS AD9734/AD9735/AD9736 FUNCTIONAL BLOCK DIAGRAM FEATURES RESET A reduced-specification LVDS interface is utilized to achieve the high sample rate. The output current can be programmed over a range of 8.66 mA to 31.66 mA. The AD973x family is

Contextual Info: Ultra Bright LED TYPE NO. SOURCE COLOUR IV Vf VIEWING Xp MIN If MAX If LENS ANGLE nm (m cd) (mA) (V) (mA) CHARACTERISTICS 26 1/2 MSB81TK MSB81CK MSB81TA-1 MSB81TA-2 MSB81TA-3 MSB81TA-4 MSB81TA-5 MOB81TA MGB81TA MYB81TA MSB81CA MOB8ICA MOB81CRA MGB81CA MYB81CA

pin configuration transistor 5609

Abstract: PETI TPS79101 TPS79101DBVR TPS79101DBVT TPS79118 TPS79118DBVT TPS79133 TPS79133DBVT TPS79147
Contextual Info: Actual Size 3,00 mm x 3,00 mm www.ti.com Actual Size (3,00 mm x 3,00 mm) TPS79101, TPS79118 TPS79133, TPS79147 SLVS325C – MARCH 2001 – REVISED MAY 2002 ULTRALOW NOISE, HIGH PSRR, FAST RF 100-mA LOW-DROPOUT LINEAR REGULATORS FEATURES D 100-mA Low-Dropout Regulator With EN

fah 37 reverse protection diode

Abstract: NSSM038A c00102 NSSM038AT NSSM038AT-E ADC 7815
Contextual Info: LDS8160 Dual-Output RGB / 6-Channel WLED Driver with LED-SenseTM Temperature & Color Compensation FEATURES • Six PowerLite Linear LDO current drivers with 25 mV drop-out in a common cathode topology with up to 25 mA per channel  LED current programmable from 0 to 25 mA

dm 0765

Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
Contextual Info: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz