MA302 Search Results

Contextual Info: MA3024M6000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3024M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

MA2560

Abstract: MA3056L MAS 560 KT 200 MA3120/M MA3047L MA2510 MA3056 MA3022 MA3024
Contextual Info: - 240y * m MA2510 MA2560 MA3020 MA3022 MA3024 MA3027 MA3030 MA3033 MA3036 MA3039 MA3043 MA3047 MA3047L MA3051 MA3 0 51L MA3056 MA3056L MA3062 MA3062L MA3068 MA3068L MA3075 MA3075L MA 3082 MA3 0 8 2 L MA3091 MA3 0 91L MA3100 MA3100L MA3110 MA3110L MA3120 MA312 0 L

Contextual Info: MA3028M60000000 N-Ch 35V Fast Switching MOSFETs General Description Product Summery The MA3028M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck

Contextual Info: MA3022M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3022M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3020P10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3020P is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3024S10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3024S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Contextual Info: MA3022D100000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3022D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

transistor BC 667

Abstract: bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS MA3036
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FA IR CH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

A3054

Abstract: MA3036 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

MA2560

Abstract: MA2510 MA3056 MA3062L MAS220 MA3020 MA3022 MA3024 MA3027 MA3036
Contextual Info: - 240- y * m S % P uff MA2510 MA2560 MA3020 MA3022 MA3024 MA3027 MA3030 MA3033 MA3036 MA3039 MA3043 MA3047 MA3047L MA3051 MA3 0 51L MA3056 MA3056L MA3062 MA3062L MA3068 MA3068L MA3075 MA3075L MA 3082 MA3 0 8 2 L MA3091 MA3 0 91L MA3100 MA3100L MA3110 MA3110L

Contextual Info: MA3022M60000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D111210

Contextual Info: MA3028M60000000 N-Ch 35V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 35 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610

MONOLITHIC DIODE ARRAYS fairchild

Abstract: MA3046 vp2l DIODE IR 1F A3054 MA3036 UA3026HM MONOLITHIC DIODE ARRAYS
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

Contextual Info: MA3024S10000000 N-Ch 30V Fast Switching MOSFETs Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State 30 Units V TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009

MA2560

Abstract: MA3330 MA1180 Panasonic MA1056 MA1033 ma4300 zener panasonic diode MA4020 MA8180 DIODE D29
Contextual Info: Diode # Zener Diodes Line-up Zener Voltage Vz V MA1000 Series DO-35 (D28) PD = SOOmW MA2000 Series DO-41 (D29) PD = 1W MA3000 Series Mini Type 3 pins (D12) P d = 500mW 1 .8 8 - 2.24 MA1020 MA4020 2 .0 8 - 2.45 MA 1022 MA4022 2 .2 8 - 2.70 MA1024 MA3024 MA4024

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA3028D10000000 Version

MONOLITHIC DIODE ARRAYS fairchild

Abstract: A3019 pa3026 PA3019 pa3046 jA3018 diode 5D A3019HM A3054 MA3036
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

Contextual Info: MA3024D10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3024D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Contextual Info: MA3024M6000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D112610

Contextual Info: MA3024D10000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

Contextual Info: MA3020P10000000 N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

MA2560

Abstract: MA3062L MA2510 MA3022 MA3056 MAS220 MA3020 MA3024 MA3027 MA3036
Contextual Info: - 240y * m S % P uff MA2510 MA2560 MA3020 MA3022 MA3024 MA3027 MA3030 MA3033 MA3036 MA3039 MA3043 MA3047 MA3047L MA3051 MA3 0 51L MA3056 MA3056L MA3062 MA3062L MA3068 MA3068L MA3075 MA3075L MA 3082 MA3 0 8 2 L MA3091 MA3 0 91L MA3100 MA3100L MA3110 MA3110L

MA725C

Abstract: MA702C TO-99 709C 715C MA307 MA741C OP AMP
Contextual Info: FAIRCHILD LINEAR OPERATIONAL AMPLIFIERS Input Offset Current nA Max Input Bias Current nA (Max) 50 250 ±12 30 — 30 ±10 General Purpose Op Amp 7.5 30 50 250 ±15 Super Beta Op Amp 7.5 30 1.0 7.0 ±13.5 mA301A General Purpose Op Amp mA302 Voltage Follower

MA1012

Abstract: MA-302-55E 6063T5 Tgon 800 MV301 SIL-PAD density a366
Contextual Info: HEATSINK Heatsink with clips for TO-264 and TO-247 F e at u r e s Ohmite introduces the M series, patented Pat. No. 7,151,669 , high performance, low cost, configurable, scalable and compact heat sink with matrix clip system for TO-247 and TO-264 packages. This powerful heat sink provides the easiest assembly, largest