M447 Search Results

M-947

Abstract: mps 56 M3501 M740 M190
Contextual Info: .406 MAX . .815 MAX . .181 MAX . .374 MAX . P art Number Des ign V oltage A mps C M559 C M127 C M285 C M740 C M820 C M159 C M259 C M444 C M447 1.38 2.47 C M555 C M147 L ife Hours .56 .25 .33 .45 50 30 S -2 C -2R 5.00 5.00 6.00 6.30 .09 .07 .14 .15 .25 .19

HXTR-3101

Contextual Info: HEWLETT-PACKARDi CNPNTS SOE D B M447SÔ4 0005523 7 El w m h ewlett mi.E3 PA C K A R D T 'H -O Ì G eneral Purpose Transistors HXTR-3001 Chip Technical Data HXTR-3101, TX and TXV 2N6838 HXTR-3103, TX and TXV HSMX-3131 HSMX-3151 Features D escription • H ig h G ain

Contextual Info: 30-F212R6A050SC-M447-E-PM 30-F212R6A050SC01-M447E10-PM flowPACK 2 1200V/50A Features flowPACK 2 ● Inverter, blocking diodes ● Built-in thermistor ● IGBT4 technology for low saturation losses Target Applications ● Power Regeneration Schematic Types

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M4475 Construction Diameters (In) 1) Component 1 1 X 1 COND a) Conductor 22 (7/30) AWG TC 0.030 b) Insulation 0.013" Wall, Nom. PVC

Contextual Info: HEULETT-PACKARD/ CMPNTS blE 1 HEW LETT PACKARD m • M4475B4 0001958 Obi B H P A AT-60535 UP to 6 GHz Low Noise Silicon Bipolar Transistor 35 micro-X Package Features • • • • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz

Contextual Info: HEW LE TT — PACKARD/ CMPNTS blE D T O * HEW LETT mlKM PACKARD • M4475fl4 0D10D11 A4? « H P A INA-02170 Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Features 70 mil Package .040 • Cascadable 50 £2 Gain Block • Low Noise Figure: 2.0 dB typical at 0.5 GHz

M4472

Abstract: stm4472
Contextual Info: S T M4472 S amHop Microelectronics C orp. May.2 ,2007 N- Channel Enhancement Mode Field Effect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 24 @ V G S = 10V

ATF-45100

Abstract: ATF45100-GP6 at8151
Contextual Info: HEWLETT-PACKARD/ CflPNTS m blE ]> HEW LETT PACKARD • M447SÖ4 G O Q ^ S M Features • • • 3T7 ■ H P A ATF-45100 AT-8151 2-12 GHz Medium Power Gallium Arsenide FET Chip Outline High Output Power: 29.0 dBm typical Pi <mat 4 GHz High Gain at 1 dB Compression:

Bi20-CP40-VP4X2

Abstract: NI35-CP40-vp4x B1007 M1514400 M1501200 BI15-CP40-VP4X2 M1501000
Contextual Info: Housing Style - Rectangular CP40 - Embeddable/Nonembeddable, Terminal Chamber Part Number ID Number Bi15-CP40-AD4X Ni20-CP40-AD4X M4477000 M4477100 Bi15U-CP40-AN6X2 Bi15-CP40-AN6X2 Ni20-CP40-AN6X2 Ni25U-CP40-AN6X2 Ni40U-CP40-AN6X2 Bi15-CP40-AN6X2/S97 M1623512

IAM-81000

Abstract: IAM transistor
Contextual Info: HEWLETT-PACKARD/ CMP N T S blE J> m M447SA4 aOCH'nb fl5b IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Thai HEW LETT W!HA PACKARD IAM-81000 Chip Outline Features • • • • • • • • I HPA 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz

Contextual Info: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)

STM4472

Abstract: M4472
Contextual Info: Green Product S T M4472 S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0 N- Channel Enhancement Mode Field Effect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m ıΩ ) Max R ugged and reliable.

HXTR3685

Abstract: HXTR-7111 HXTR-3615 hxtr-3685 HXTR3 HXTR-7111TXV hxtr-7011
Contextual Info: HEWLETT-PACKARD-. CMPNTS SDE D B M447SÖ4 QQOSSbb 3 El T " 31“ /? T-31'21 Low N oise Transistors HXTR-7011 Chip HXTR-7111, TX and TXV HXTR-3615, TX and TXV HXTR-3645, TX and TXV HXTR-3675, TX and TXV HSMX-3635 HSMX-3655 Technical Data Features D escription

STM4472

Abstract: norma M4472
Contextual Info: S T M4472 S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0 N- Channel Enhancement Mode Field Effect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m ıΩ ) Max ID R ugged and reliable.

Ni20NF-CP40-VP4X2

Abstract: Bi20-CP40-VP4X2 BI15-CP40-VP4X2 Ni40U-CP40-VP4X2 NI25U-CP40-AP6X2 M150-1000 Bi15U-CP40-VP4X2
Contextual Info: Housing Style - Rectangular CP40 - Embeddable/Nonembeddable, Terminal Chamber Part Number ID Number Bi15-CP40-AD4X Ni20-CP40-AD4X M4477000 M4477100 Bi15U-CP40-AN6X2 Bi15-CP40-AN6X2 Ni20-CP40-AN6X2 Ni25U-CP40-AN6X2 Ni40U-CP40-AN6X2 Bi15-CP40-AN6X2/S97 M1623512

Bi20-CP40-VP4X2

Abstract: Ni20NF-CP40-VP4X2 Ni40U-CP40-VP4X2 NI40U-CP40-VN4X2 NI20NF-CP40-VN4X2 M1623512 Ni20NF Bi15U-CP40-VP4X2 M1528 Ni40U-CP40-AP6X2
Contextual Info: Housing Style - Rectangular CP40 - Embeddable/Nonembeddable, Terminal Chamber Part Number ID Number Bi15-CP40-AD4X Ni20-CP40-AD4X M4477000 M4477100 Bi15U-CP40-AN6X2 Bi15-CP40-AN6X2 Ni20-CP40-AN6X2 Ni25U-CP40-AN6X2 Ni40U-CP40-AN6X2 Bi15-CP40-AN6X2/S97 M1623512

Contextual Info: 30-F212R6A050SC-M447-E-PM 30-F212R6A050SC01-M447E10-PM 1200V/50A Output Inverter Application flowPACK 2 General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 8 Ω Rgoff = 8 Ω IGBT Figure 1 FWD Figure 2 Typical average static loss as a function of output current

Contextual Info: engineered to light up your design www.vcclite.com 1.800.522.5546 T-3 1/4 Wedge Base .406 MAX . .815 MAX . .181 MAX . .374 MAX . P art Number Des ign V oltage A mps C M559 C M127 C M285 C M740 C M820 C M159 C M259 C M444 C M447 1.38 2.47 C M555 C M147 F ilament

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M4473 Construction Diameters (In) 1) Component 1 2 X 1 PAIR a) Conductor 22 (7/30) AWG TC 0.030 b) Insulation 0.008" Wall, Nom. Polypropylene(PP)

HFBR-1201

Abstract: hfbr-2201 SIECOR Fiber Optic cable HFBR-1202 HFBR-2202 transistor b 1202 RS-458 HP 2202 screw cores UNS thread HFBR2202
Contextual Info: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)

HP 2601

Abstract: HP 2601 optocoupler hp 2611 6N137 rs232 6N137 application note EL 6N137 hp 6n137 2601 hp 6N137 E55361
Contextual Info: HEW LETT-PACKARD/ CMPNTS b lE D • M4475flM D 0 m 0 t 2 235 H H P A w a rn HEW LETT m L fim PA C K A R D High CMR, High Speed TTL Compatible Optocoupler Technical Data 6N137 HCPL-2601 HCPL-2611 Features • Internal Shield for High Common Mode Rejection CMR

ATF13484-STR

Abstract: ATF-13484 13484 F-13484 ATF-1348
Contextual Info: HEWLETT-PACKARD/ CHPNTS blE D H EW LETT PACKARD • M4475Û4 QOO T T G E TTT ■HPA A T F-13484 1-16 GHz Low Noise Gallium Arsenide FET 84 Plastic Package Features Low Noise Figure: 1.0 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz High Output Power: 18.0 dBm typical Pi dB

M947

Abstract: m190 M740 m820 2f y M147 CM-400 M158 M192 M3501
Contextual Info: .406 MAX . .815 MAX . .181 MAX . .374 MAX . P art Number Des ign V oltage A mps C M559 C M127 C M285 C M740 C M820 C M159 C M259 C M444 C M447 1.38 2.47 C M555 C M147 F ilament T ype MS C P L ife Hours .56 .25 .33 .45 50 30 S -2 C -2R 5.00 5.00 6.00 6.30 .09

HP 2601

Abstract: HP 2601 optocoupler 2601 hp 6N137 rs232 hp 6n137 M35012 hp 2611 101HJ Optocouplers for rs232 ttl HP 2601 ic
Contextual Info: HEW LETT-PACKARD/ CMPNTS b lE D • M4475flM D 0 m 0 t 2 235 H H P A w a rn HEW LETT m L fim PA C K A R D High CMR, High Speed TTL Compatible Optocoupler Technical Data 6N137 HCPL-2601 HCPL-2611 Features • Internal Shield for High Common Mode Rejection CMR