MM475 Search Results

Contextual Info: H E W L E T T - P A C K A R D / C M PN TS Whpt H E W L E T T WHiM P A C K A R D blE D • MM475flM O O l O O b J Ofll HPA MSA-0311 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers SOT-143 Package Features • Cascadable 50 f2 Gain Block

Contextual Info: HEWLETT-PACKARD/ • 7 1« CPIPNTS b lE HEW LETT mPPM P I> ■ MM475A4 ME? AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor a c k a rd Features • • • • • OOI OMTB 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi hb at 2.0 GHz

Contextual Info: HEWLETT — PACKARD/ CMPNTS WLjm HEWLETT blE D • AT-00572 PACKARD MM475A4 000T776 T?T H H P A Up to 1 GHz General Purpose Silicon Bipolar Transistor Features TO-72 Package • 19.0 dBm typical Pi dB at 1.0 GHz • 6.0 dB typical GidB at 1.0 GHz • 2.3 dB typical NFo at 1.0 GHz

Contextual Info: HEW LETT-PACKARD/ m hlE C MP NT S J> m MM475A4 0D10037 At.2 IHPA MSA-0135, -0136 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT PACKARD Features 35 micro-X Package1 • Cascadable 50 i i Gain Block • 3 dB Bandwidth: DC to 1.2 GHz

Contextual Info: HEWLETT- PAC KARD/ CHPNTS blE D • MM475A4 D01D141 174 ■ H P A M SA-1100 M O D A M P Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers m g m H e w le t t VUiA P A C K A R D Features Chip Outline1 • High Dynamic Range Cascadable 50 £2 or

ph-200 diode

Abstract: 5082-3040 HP an-922 5082-3040 equivalent 5082-3041 LM 3041
Contextual Info: H E W L E T T - P A C K A R D / CflPNTS blE D • 4 4 4 7 5 Ö 4 G D G cì7E3 ^ bl ■ H P A W hp% m U r im H E W LE T T P a c k a rd Stripline PIN Diode Switches/ Attenuators 5082-3040 5082-3041 5082-3340 Features 2 16 0 085 f f ï (0 075) • Low Cost to Use

Contextual Info: That EC W ER TD T m LïiMH PA KLA Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-0311 Features Description • Cascadable 50 Q Gain Block The MSA-0311 is a low co st silicon bipolar M onolithic M icrowave Integrated Circuit MMIC housed in the surface m ount plastic

Contextual Info: ¥fmL'¿K¡%M HPACKARD EW LETT Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1013 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1013 Series is a wideband general puipose thin-film bipolar

TRANSISTOR 0835

Abstract: id 0835
Contextual Info: mL'fLMP A C K A R D TholHEWLETT Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835, -0836 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.0 dB Typical at 1.0 GHz • Low Noise Figure: 3.0 dB Typical at 1.0 GHz

100A101MCA50

Contextual Info: That H E W L E T T ' mLfim P A C K A R D Surface Mount Microwave Schottky D etector D iodes in SOT-323 SC -70 Technical Data HSMS-285A Series HSMS-286A Series F eatures Package Lead Code Identification (Top View) • S u rface M ount SOT-323 P ackage • H igh D e te c tio n S en sitiv ity :

OPTOCOUPLER hp 2631

Abstract: a 2630 pin diagram optocoupler A 2631 optocoupler hp 2631 HP 2630 optocoupler 2631 optocoupler HP 2631 optocoupler HP 4661 optocoupler A 4661 optocoupler 2631
Contextual Info: Thal H E W L E T T mLKM P A C K A R D D u al C hannel, H igh CMR, H igh S p eed , TTL C om p atible O p tocou p lers 8 P in D IP an d SOIC-8 T p n V m in n l T i n t « le c n n iL a i U d l d Features • Available in 8 Pin DIP and SOIC-8 • Internal Shield for High

Contextual Info: r e « HEW LETT mLUM P A C K A R D Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 F eatures Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

Contextual Info: That HEWLETT mLfiM P a c k a r d 1 .5 - 2 .5 G H z U p c o n v e r te r/ D o w n c o n v e r te r Technical Data HPMX-5001 F eatures P lastic TQFP-32 Package • 2.7 V Single Supply Voltage • Low Power Consumption 60 mA in Transmit Mode, 39 mA in Receive Mode

Contextual Info: mWhat L'HMHEWLETT PACKARD Intelligent Power Module and Gate Drive Interface Optocoupler Technical Data Features • Performance Specified Over Full Military Temperature Range: -55°C to 125°C • Fast Maximum Propagation Delays tpHL = 450 ns, tpLH = 650 ns

T3D 62

Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66
Contextual Info: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli­ cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator

Contextual Info: W h at HEW LETT mlÏKM PA C K A R D Low Cost, Industry Standard FDDI MIC Transceivers Technical Data HFBR-5111 2x11 HFBR-5112 (Narrow 1x13) HFBR-5113 (Standard 1x13) Features • Full Compliance w ith the FDDI PMD Standard • Full Compliance w ith the Optical Performance

HCMS-29XX application note

Contextual Info: W hp% H E W L E T T W i!EM P A C K A R D High Performance CMOS 5 x 7 Alphanumeric Displays Technical Data Features Description • Easy to Use • Interfaces Directly with Microprocessors • 0.15" Character Height in 4, 8, and 16 2x8 Character Packages

Contextual Info: That HEW LETT W L E M PACKARD 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features Surface Mount SOT-363 SC-70 Package Applications Pin Connections and Package Marking QNPifTT Til • Ultra-Miniature Package • Internally Biased, Single 5 V

CNW4562

Abstract: HCPL 601 E55361 HCPL-4562 OPTOCOUPLER photo output
Contextual Info: W B t HEWLETT mt!HM P A C K A R D Wide Body, High Bandwidth, Analog/Video Optocoupler Technical D ata CNW4562 Features Applications Description • 5000 Vrm8/1 M in u te In su la tio n W ith stan d C a p ab ility • W orld w id e S a fe ty A p p roval • V id eo S ig n a l Iso la tio n fo r

AT-00500

Abstract: Hewlett-Packard transistor microwave Silicon Bipolar Transistor Hewlett-Packard
Contextual Info: HEWLETT-PACKARD/ m CMP N T S blE HEW LETT D 44475A4 0 D D ci 7 b ñ GET AT-00500 UP to 4 GHz General Purpose Silicon Bipolar Transistor Chip D iO iA D n Chip Outline Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • 11.5 dB typical Gi dB at 2.0 GHz

IC A 3120 igbt drive

Abstract: HCPL3120
Contextual Info: m am Hew lett W lH M P A C K A R D 2.0 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3120 HCPL-J312 HCNW3120 F eatures • 2.0 A Minimum Peak Output Current • 15 kV/^ls Minimum Common Mode Rejection CMR at VCM = 1500 V • 0.5 V Maximum Low Level

Encoder interface with HCTL-1100

Contextual Info: ¥¡¡El H EW LETT wllKM PA C K A R D General Purpose Motion Control ICs MOTION SENSING AND CONTROL Technical Data HCTL-1100 Series Features Description • Low Power CMOS • PDIP and PLCC Versions Available • Enhanced Version of the HCTL-1000 • DC, DC Brushless, and Step

Contextual Info: rm 1 LETT l/im HEW PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical Pi dBat 2.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G] ^ at 2.0 GHz • Low Noise Figure:

Contextual Info: Whp\ H E W L E T T mÜKÆ P A C K A R D 0.1 - 6 GHz 3 V, 14 dBm Amplifier Technical Data MGA-81563 Features • +14.8 dBm PidB at 2.0 GHz Surface Mount Package SOT-363 SC -70 +17 dBm Psat at 2.0 GHz • Single +3V Supply • 2.8 dB N oise Figure at 2.0 GHz