TSOP32
Abstract: TSOP32 Package PLCC32
Contextual Info: M28W201 2 Mbit 256Kb x8, Bulk Low Voltage Flash memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical (PRESTO F Algorithm) ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION
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m28w201256kb100ns120ns+5150ns200nsplcc32tsop32tsop32 package
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Contextual Info: SGS-THOMSON M28W201 IIIIM J ì ILIì M W IIÈ Ì 2 Mb 256K x 8, Chip Erase LOW VOLTAGE FLASH MEMORY PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10|is typical (PRESTO F Algorithm) ELECTRICAL CHIP ERASE in 1s RANGE
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PLCC32
Abstract: TSOP32
Contextual Info: M28W201 2 Mb 256K x 8, Chip Erase LOW VOLTAGE FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical (PRESTO F Algorithm) ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION
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m28w201100ns120ns150ns+4200nsplcc32tsop32ai02061
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plcc32 pinout
Abstract: 1N914 PLCC32 TSOP32
Contextual Info: M28W201 2 Mbit 256Kb x8, Bulk Low Voltage Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical (PRESTO F Algorithm) ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION
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m28w201256kb100nsplcc32 pinout+31n914plcc32tsop32
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TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
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m2716m2732am2764am27128a+7m27256m27512450nstsop40 flashm48z32ym27v512fdip24w
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intel 27c512 eprom
Abstract: W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512
Contextual Info: LEAPER-3D USB HANDY FLASH IC WRITER LEAPER-3D is a compact and light programmer, very suitable for the development and servicing or the hobby environment. Combining EPROM and FLASH memory devices programming, LEAPER-3D FLASH IC WRITER supports various 8-Bit devices by its 32-pin ZIF socket.
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32-pin9x/2000/xpmx29f040pm29f004b+16pm29lv004tpm29f004tpm29lv002bsst39sf010asst39lf010sst39vf020intel 27c512 epromw27c256f29c51002t27cxxx programming27c080transistor n100ti 27c256ti 27c01027c64 eprom programmereprom 27c512
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asm eagle
Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:
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brmemsel/0997asm eaglem28f101m28f102+7m28f201m28f256m28f512texas 4mb dramm27c1024parallel nor flash marketmbx860
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W27c256
Abstract: f29c51002t LEAPER-3 W27e256 27CXX W27f512 W49V020 W29EE010 en29f002nt MX29F004B
Contextual Info: LEAPER-3C Stand-Alone Handy Flash IC Writer Programmer Series A16 Introduction LEAPER-3C, a compact, user friendly handy stand-alone writer that is specially designed for FLASH EPROM series. It can be powered by power adaptor or batteries. Together with the slave ZIF socket, LEAPER3C is able to process programming without
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2v/500maplcc-32/tsop-32/vsop-32characte10asst29le020+16sst29le020asst29ve512sst29ve512asst29ve010sst29ve010asst29ve020w27c256f29c51002tleaper-3w27e25627cxxw27f512w49v020w29ee010en29f002ntmx29f004b
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27C080
Abstract: 27C64 W27c256 W27F512 W27F010 TI 27c010 27C256 27C040 27C128 Q100
Contextual Info: EPP-3 Device List The EPP-3 can program 27xxx devices by means of the list of general devices. In order to program 27xxx devices the programming specs of the device which are no a days provided freely on the internet can be usefull (just follow the links on our WebSite: http://www.artbv.nl).
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27xxx27c6427c12827c256+1027c51227c01027c02027c04027c080w27c256w27f512w27f010ti 27c010q100
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PJ 1179
Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a
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pj 1179m27512 12b1m27f512st24c08b1+6m27c256b-12f1st93c46ab1m27c4001-12f1m48z32ym27c1001-20f1st24c04cm6tr
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M29F STMicroelectronics
Abstract: M29F002 M29F040 M29F100 M29F102B M29F105B M29F200 M29F400 M29W040 M29W400
Contextual Info: Flash Memories Discover ST Now A WORLD LEADER IN NON-VOLATILE MEMORIES STMicroelectronics is a world leader in Non-Volatile Memories, manufacturing a broad range which includes OTP one time programmable and UV (ultra violet erase) EPROMs, Flash Memories,
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flflash/0998286-cj103m29f stmicroelectronicsm29f002+8m29f040m29f100m29f102bm29f105bm29f200m29f400m29w040m29w400
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