M28F2 Search Results

AS263

Abstract: 271066 l213d
Contextual Info: INTEL CORP UP/PRPHLS ' EQE |) • 4fi2bl7S OOfilSS? T ■ ¡ n y * M28F256 n?4(eHV2.7 256K (32K x 8) CMOS FLASH MEMORY M ilitary a Flash Electrical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

Contextual Info: SGS-THOMSON D »iILi 'irM D E Ì M28F220 2 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

Contextual Info: £yj SGS-THOMSON DWIllLI DW!lll©i M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ ■ ■ ■ FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 1Ojas typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION

Contextual Info: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

Contextual Info: 5 7 . M28F211 M28F221 SGS-THOMSON RS0 gS3 (ó ÌlLi TO©K!IQ(§i 2 Megabit (x 8, Block Erase) FLASH MEMORY PRELIMINARY DATA • SMALLSIZE PLASTIC PACKAGETSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­

Contextual Info: 5 7 . S G S -1 H 0 M S 0 N M28F201 M g [ M l[ L I( ^ [ il( g § 2 Megabit (256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10pATyp. ■ 10,000 PROGRAM/ERASE CYCLES

Contextual Info: SGS-THOMSON IIIIMJì ILIì M W IIÈÌ M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10|jA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE

M28F256

Abstract: PDIP32 PLCC32
Contextual Info: M28F256 256 Kbit 32Kb x8, Bulk Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

1N914

Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: w - SCS-THOMSON k7#» IM [MDi[LI STnMDKOD©i> M28F201 2 Mb (256K x 8, Chip Erase FLASH MEMORY • ■ ■ ■ ■ - ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10|xs typical ELECTRICAL CHIP ERASE in 1s RANGE

M28F220

Abstract: T2032 T432
Contextual Info: w - SCS-THOMSON M28F220 k7 # . IM [MDiHI ènnMPM]D(§Ii 2 Mb (x8/x16, Block Erase FLASH M EM O RY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5% o r ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE

1N914

Abstract: M28F201 PDIP32 PLCC32 VA00644
Contextual Info: 5 7 , SGS-THOMSON M28F201 CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA FAST ACC ESS TIM E: 100ns LOW POWER CONSUMPTION - Standby Current: 10O^A Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIME 10(is (PRESTO F ALGORITHM)

M28F201

Abstract: PLCC32 TSOP32
Contextual Info: M28F201 2 Mbit 256Kb x8, Bulk Erase Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 5µA typical

2SF256

Abstract: M28F256A
Contextual Info: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)

28F220

Contextual Info: GF. SGS-1H0MS0N M28F220 2 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING • 5V ± 10% SUPPLY VOLTAGE ■ 12V ± 5% or ± 10% PROGRAMM ING VOLTAGE ■ FAST ACCESS TIM E: 60ns ■ PROGRAM /ERASE CO NTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ M EM ORY ERASE in BLOCKS

M28F256A

Contextual Info: SGS-mOMSON RíilD g[S [l[L[I(gTriS(0 R!lD(gi M28F256A CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION - Standby Current: 200nA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10jis

AN1004

Abstract: M28F220 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

QR117

Abstract: M28F220 QR111
Contextual Info: QUALIFICATION REPORT M28F220 T6: 2 Mb x8/x16 FLASH MEMORY in SO44, ANAM ASSEMBLY LINE INTRODUCTION The M28F220 ia s 2 Mb Dual Supply (5/12V) Boot Block Flash memories organised as 256K bytes of 8 bits each or 128K words of 16 bits each. It is manufactured in the SGS-THOMSON Advanced CMOS 0.6

M28F102

Abstract: PLCC32 package M28F101 M28F256 PLCC32 QRFL9812 quality control procedure st
Contextual Info: QRFL9812 QUALIFICATION REPORT M28F256 T5-U20: 256 Kbit x8 Dual Supply Flash Memory INTRODUCTION The M28F256 is a 256 Kbit Dual Supply (5V/12V) Flash memory organized as 32 KByte of 8 bits each. It is offered in PLCC32 packages. The M28F256 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U20 (-20%

M28F201

Abstract: AN1253 AN1193 M29F002B M29F002BB M29F002BT PLCC32 TSOP32
Contextual Info: AN1253 APPLICATION NOTE Replacing the M28F201 with the M29F002B Flash Memory CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F201 in

1N914

Abstract: M28F201 PLCC32 TSOP32
Contextual Info: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs

1N914

Abstract: M28F256 PDIP32 PLCC32 BP-DIP32
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

Contextual Info: ¿ V M28F220 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Flash Memory • 5V ±10% SUPPLY VOLTAGE ■ 12V ±5% or ±10% PROGRAMMING VOLTAGE ■ FAST ACC ESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

Contextual Info: Æ 7 SCS-THOMSON ^ 7 # M28F201 [iD ê œ iL K g ^ O iQ ig i CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100p.A Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE