200NA Search Results
200NA Price and Stock
IXYS Corporation DPF240X200NAModule: diode; double independent; 200V; If: 120Ax2; SOT227B; screw |
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DPF240X200NA | 6 | 1 |
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IXYS Corporation CLA100PD1200NAModule: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw |
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CLA100PD1200NA | 5 | 1 |
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CLA100PD1200NA | 62 |
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CLA100PD1200NA | 3 | 1 |
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IXYS Corporation CLA60PD1200NAModule: diode-thyristor; 1.2kV; 60A; SOT227B; Ufmax: 1.09V; screw |
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CLA60PD1200NA | 1 | 1 |
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IXYS Corporation DHG50X1200NAModule: diode; double independent; 1.2kV; If: 25Ax2; SOT227B; screw |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DHG50X1200NA | 100 |
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DHG50X1200NA | 158 |
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IXYS Corporation CLA110MB1200NAModule: thyristor; opposing; 1.2kV; 50A; SOT227B; Ufmax: 1.04V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CLA110MB1200NA | 1 |
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200NA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DAC7512Contextual Info: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V |
Original |
dac7512sbas156b12-bit200na+1 | |
marking code D3 SOT23-6 DAC
Abstract: d12n marking DAC7512 D12N DAC7512E DAC7512N
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Original |
dac7512sbas156b12-bit200na+7 | |
Bosch diode
Abstract: Bosch BD5024 BD5020 Diode pressfit
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Original |
bd5020bd5024200nabd5020r+4 | |
mx29lv320ttc
Abstract: MX29LV320T Q0-Q15 SA10
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Original |
mx29lv320t/b32m-bit200na10-year+9 | |
100nf chip cap
Abstract: DIL-16 SOIC-16 SSOP-16 UCC5343
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Original |
ucc5343200na500ma100nf chip cap+3 | |
MX29LV033Contextual Info: ADVANCED INFORMATION MX29LV033A 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention |
Original |
mx29lv033a32m-bit200na10-year+3 | |
5101ab
Abstract: ic 5101 ram 5101 cmos ram L21S
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OCR Scan |
m5101-4m5101l-4200na/bit800ns+4 | |
DAC7512
Abstract: marking code 10 sot23 NATIONAL SEMICONDUCTOR MARKING CODE sot D12N DAC7512E DAC7512N D12e d12n marking
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Original |
dac7512sbas156b12-bit200na+9 | |
DAC7512
Abstract: dac interfacing with 8051 microcontroller marking 332 sot23-6 400H DAC7512E
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Original |
dac751212-bit200naot23-6+5 | |
MC33172
Abstract: MC33172N MC35172
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OCR Scan |
mc33172mc35172100mv200na/amp+2 | |
BD5024
Abstract: Bosch BD5020
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Original |
bd5020bd5024200nabd5020r+2 | |
MD3520
Abstract: MD3524 a 770
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Original |
md3520md3524200namd3520r+2 | |
DAC7512Contextual Info: DAC7512 DAC 751 2 DAC 7512 SBAS156B – JULY 2002 Low-Power, Rail-to-Rail Output, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION ● microPOWER OPERATION: 135µA at 5V ● POWER-DOWN: 200nA at 5V, 50nA at 3V ● POWER SUPPLY: +2.7V to +5.5V |
Original |
dac7512sbas156b12-bit200na+1 | |
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Contextual Info: MD3520 & MD3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE MOTOROLA TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 200nA |
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md3520md3524200namd3520r+1 | |
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Contextual Info: LD3520, LD3524, LD3536 35A AVALANCHE LUCAS TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data E D |
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ld3520ld3524ld3536200na+2 | |
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Contextual Info: BD5020, BD5024, BD5036 50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data |
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bd5020bd5024bd5036200na+2 | |
marking code 5H diodeContextual Info: MMDL707 Schottky Barrier Diode SOD-323 Features Low reverse leakage—IR=200nA Max. . Very Low Capacitance—1.0pF @20V. Extremely Low minority carrier lifetime. High reverse leakage—70V(min.) Dimensions in inches and (millimeters) Applications |
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mmdl707od-323200naleakage--70v+2 | |
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Contextual Info: LD2520 & LD2524 WTE POWER SEMICONDUCTORS Pb 25A AVALANCHE LUCAS TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 200nA C |
Original |
ld2520ld2524200nald2520r+1 | |
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Contextual Info: BD5020 & BD5024 WTE POWER SEMICONDUCTORS Pb 50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data D Case: 13mm Bosch Type Press-Fit Terminals: Contact Areas Readily Solderable |
Original |
bd5020bd5024200nabd5020r+1 | |
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Contextual Info: ADVANCED INFORMATION MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle |
Original |
mx29lv320t/b32m-bit64k-byte250maar/21/2002+1 | |
SD101AWS
Abstract: SD101BWS SD101CWS
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Original |
sd101bwsod-323200na120k/ctn+2 | |
BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
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Original |
bas40-05ot-23600ma200ma+9 | |
SD101AW
Abstract: SD101BW SD101CW
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Original |
sd101bwod-123200na120k/ctn+2 | |
dac7512
Abstract: fsr 12.5
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Original |
dac7512sbas156b12-bit200na+2 | |