M12L32162A Search Results

Contextual Info: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 -Original Revision 0.2 (Mar. 15 2007) -Add BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Mar. 2007 Revision : 0.2 1/29 ESMT Preliminary M12L32162A SDRAM 1M x 16Bit x 2Banks

Contextual Info: ESMT M12L32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION The M12L32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS

Contextual Info: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2006 Revision : 0.1 1/28 ESMT Preliminary M12L32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z

M12L32162A

Abstract: M12L32162A-7BG M12L32162A-7TG
Contextual Info: ESMT M12L32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION The M12L32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS

Contextual Info: ESMT M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Revision 0.4 (Sep. 28 2007) - add speed –5 sepc.

54PIN

Abstract: M12L32162A M12L32162A-7BG M12L32162A-7TG
Contextual Info: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Elite Semiconductor Memory Technology Inc.

M12L32162A

Abstract: 54-LEAD
Contextual Info: ESMT M12L32162A Operation Temperature Condition -40°C~105°C Revision History Revision 1.0 Jul. 11 2007 - Original Revision 1.1 (Jul. 25 2007) - Support CAS Latency = 1 Revision 1.2 (Dec. 26 2007) - Modify part no. - Modify tSH from 1ns to 2ns Elite Semiconductor Memory Technology Inc.

M13S2561616A-5TG

Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now

um61256

Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
Contextual Info: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B