M1222 Search Results

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M1222 Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 22 (19/34) AWG SPC 0.032 b) Insulation 0.009" Wall, Nom. PTFE

Contextual Info: $ THIRD ANGLE PROJECTION h H REV ECN No. OR OR - - - SUGG ESTED DV874 CASE REVISIONS DESCRIPTION M122220 R76197 NEW RELEASE NEW RELEASE MOUNTING CONFIGURATION STY LES, ” np” DATE DR AUTH 0 4 /0 9 0 4 /0 9 EM EM YB YB FOR PIN CONNECTION 75 OHM .100 TYP.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434016A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434016A is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

coaxial cable awm 1354

Abstract: AWM 2498 M39024/11
Contextual Info: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan

2200nF

Abstract: M5562 f-1123 22 nF, 63 M5333K kerko F568 F5123
Contextual Info: Bedrahtete Kondensatoren, EIA-Standard X7R Eigenschaften ● ● ● ● Hohe Volumenkapazität Nichtlineare Kapazitätsänderung Hoher Isolationswiderstand Impulsfest Anwendungen ● ● ● ● Abblockung Kopplung Entkopplung Entstörung Anschlüsse Maße mm

32-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434001A 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD434001A is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434001A is packaged in 32-pin plastic SOJ.

transistor m1104

Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
Contextual Info: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms

M1222

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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD434016AL 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD434016AL is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD434008AL 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The µPD434008AL is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

32-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434004AL 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD434004AL is packaged in a 32-pin plastic SOJ.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434001AL 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD434001AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD434001AL is packaged in 32-pin plastic SOJ and 32-pin plastic TSOP (II).

D434004

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT juPD434004A 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The /¿PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD434016AL 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The /¿PD434016AL is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434008A 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The µPD434008A is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434008A is packaged in 36-pin plastic SOJ.

UPD434016A

Abstract: D434016
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT juPD434016A 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The /¿PD434016A is a high speed, low power, 4,194,304 bits 262,144 w ords by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

D434008ALLE

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD434008AL 4M -BIT CMOS FAST SRAM 512K-W ORD BY 8-BIT Description The /¿PD434008AL is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD434001A 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD434001A is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD434016A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD434004AL 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD434001A 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD434001A is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

6th edition semiconductor power devices

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434004A 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434004A is packaged in a 32-pin plastic SOJ.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434016A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434016A is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

m1104

Abstract: NF 028 nf 820 M5562 M5105 B37987-M1104-M54 NF82 M1683 M5683 NF820
Contextual Info: Multilayer Leaded Capacitors, EIA Standard X7R/B Characteristic Features ● ● ● ● High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression