M1222 Search Results

Contextual Info: $ THIRD ANGLE PROJECTION h H REV ECN No. OR OR - - - SUGG ESTED DV874 CASE REVISIONS DESCRIPTION M122220 R76197 NEW RELEASE NEW RELEASE MOUNTING CONFIGURATION STY LES, ” np” DATE DR AUTH 0 4 /0 9 0 4 /0 9 EM EM YB YB FOR PIN CONNECTION 75 OHM .100 TYP.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434016A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434016A is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

coaxial cable awm 1354

Abstract: AWM 2498 M39024/11
Contextual Info: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan

2200nF

Abstract: M5562 f-1123 22 nF, 63 M5333K kerko F568 F5123
Contextual Info: Bedrahtete Kondensatoren, EIA-Standard X7R Eigenschaften ● ● ● ● Hohe Volumenkapazität Nichtlineare Kapazitätsänderung Hoher Isolationswiderstand Impulsfest Anwendungen ● ● ● ● Abblockung Kopplung Entkopplung Entstörung Anschlüsse Maße mm

32-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434001A 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD434001A is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434001A is packaged in 32-pin plastic SOJ.

32-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434004AL 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD434004AL is packaged in a 32-pin plastic SOJ.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434001AL 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD434001AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD434001AL is packaged in 32-pin plastic SOJ and 32-pin plastic TSOP (II).

D434004

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT juPD434004A 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The /¿PD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD434016AL 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The /¿PD434016AL is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT U P D 4 3 4 0 1 6 A 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ,uPD434016A is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434008A 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The µPD434008A is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434008A is packaged in 36-pin plastic SOJ.

UPD434016A

Abstract: D434016
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT juPD434016A 4M -BIT CMOS FAST SRAM 256K-W ORD BY 16-BIT Description The /¿PD434016A is a high speed, low power, 4,194,304 bits 262,144 w ords by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

D434008ALLE

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD434008AL 4M -BIT CMOS FAST SRAM 512K-W ORD BY 8-BIT Description The /¿PD434008AL is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

D434008ALE

Abstract: d434008 PD434008A PD434
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT juPD434008A 4M -BIT CMOS FAST SRAM 512K-W ORD BY 8-BIT Description The /¿PD434008A is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

D501

Abstract: B37741 k1060 smd tabellen Siemens Matsua Components Bestellnummern-Verzeichnis K0682 d5050 nf schaltungen NDKM B37872
Contextual Info: Inhaltsverzeichnis Bestellnummernverzeichnis Seite 5 8 Lieferübersicht Elektrische Kurzdaten 11 26 Standard-Chip-Kondensatoren Slim-Line Kondensatoren 27 55 Bedrahtete Kondensatoren, EIA-Standard Bedrahtete Kondensatoren, CECC-Standard 59 68 Allgemeine technische Angaben

DVP-40EH

Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Contextual Info: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.

D434001

Abstract: D434001ALG5
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT juPD434001 AL 4M -BIT CMOS FAST SRAM 4M-W ORD BY 1-BIT Description The /¿PD434001AL is a high speed, low power, 4,194,304 bits 4,194,304 words by 1 bit CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434008A 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The µPD434008A is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434008A is packaged in 36-pin plastic SOJ.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434008AL 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The µPD434008AL is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD434008AL is packaged in 36-pin plastic SOJ.

CM624

Abstract: 1031E
Contextual Info: Case Style CM CM624 Outline Dimensions PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 CASE # F .050 1.27 G .016 (0.41) L M N P R S -.102 .028 .460 .13 .34 CM624 -(2.59) (0.71) (11.68) (3.30) (8.64) Dimensions are in inches (mm). Tolerances: 2Pl. ± .01; 3Pl. ± .005

JV1210C

Abstract: M122236
Contextual Info: Case Style JV Outline Dimensions JV1210C PCB Land Pattern Suggested Layout, Tolerance to be within ±.002 CASE # A B C D E F G H J K L M N P Q WT. GRAM JV1210C .126 3.2 .098 (2.5) .059 (1.5) .012 (.3) .024 (.6) .016 (.4) .209 (5.3) .091 (2.3) .128 (3.25)

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434016AL 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD434016AL is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD434016AL is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

32-PIN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD434004A 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT Description The µPD434004A is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD434004A is packaged in a 32-pin plastic SOJ.

D434004

Abstract: PD434004AL
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD434004AL 4M -BIT CMOS FAST SRAM 1M-W ORD BY 4-BIT Description The /¿PD434004AL is a high speed, low power, 4,194,304 bits 1,048,576 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.