M100G Search Results

RF2001

Abstract: RF2005 RF2007 1n5397 cross reference RL104 RL203 RL206 T2A20 T2a100 1N4007S
Contextual Info: Rectifiers Part No. 1A1 1A2 1A3 1A4 1A5 1A6 1A7 1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S RL101 RL102 RL103 RL104 RL105 RL106 RL107 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BY133 P513 M100A M100B M100D M100G M100J M100K M100M 1N5391 1N5392

Contextual Info: PQ7-M100G Qseven, based Intel AtomTM Processor with DDR2 SDRAM, LVDS Display, Gigabit Ethernet, SDVO ���������������� ����������������� ������������� ������������������

MBM100GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

MBM100GR12A

Abstract: RG12
Contextual Info: PDJ-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M100GR12A [定格 100A/1200V, 2in1 パッケージタイプ] 特長 外形寸法図 • 低飽和電圧特性高速スイッチング • 低ターンオフスイッチング損失 • 高速ソフトリカバリダイオード USFD 採用

WG82574L

Abstract: US15W WG82574 PQ7-M100 intel core A510 LM87 PQ7-M100G-Z530 LVDS display 512MB
Contextual Info: PQ7-M100G Qseven, based Intel AtomTM Processor with DDR2 SDRAM, LVDS Display, Gigabit Ethernet, SDVO ���������������� ����������������� ������������� ������������������

Contextual Info: M100A, M100B, M100D, M100G, M100J, M100K, M100M www.vishay.com Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106

MBM100GR12

Abstract: MBM100GR12A
Contextual Info: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode

M100J

Abstract: M100M M100A M100B M100D M100G M100K
Contextual Info: M100A thru M100M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

M100M

Abstract: M100A M100B M100D M100G M100J M100K
Contextual Info: M100A thru M100M Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 50 A IR 1.0 µA VF 1.0 V, 1.1 V Tj max. 150 °C DO-204AL (DO-41) Features Mechanical Data • • • •

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

skm 50 gb 100 d

Contextual Info: SKM 100 GB 125 DN Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1

1NS399

Abstract: 1N539S P600M MIL-STD-750 METHOD 2026 1N400 g1500 1N540b 1N5396
Contextual Info: FAMILIES OF GENERAL INSTRUMENT PLASTIC RECTIFIERS Miniature Plastic Rectifiers 1.0 to 1.5 AMPERES lyper. Features: 1N4001 thru 1N4007 MIOQAthru MIOOM 1N5391 thru 1N5399 ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Cost Diffused Junction Low Leakage High Current Capability

1n5399 equivalent

Abstract: MP606J gp25d GP15K equivalent ns8kt equivalent GP25M GP25J GL348 G4J equivalent 1N5398 equivalent
Contextual Info: S T A N D A R D R E C T IF IE R S lo{A 0.5 0.8 CASE TYPE DO-213AA DO-204AL MP606 MINI-MELF I Vrrm VOLTS) 50 6L34A MPG06A# 100 GL348 MPG06B# 200 SÌ340 MPG06D# 6L34G MPG06G# GL34J MP606J# 300 400 500 600 700 800 MPG06K# 1000 MPG06M# 1100-1600 SURGE (A) 1Ö.0

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

ms21340-05

Abstract: MS24331-1 MIL-S-8805 1EN1-6 Honeywell Switch MS24331 MS25081C6 MS-21340-05 MS 21340-05 MS25081 19PA8
Contextual Info: CATALOG m ic r o sw rrcH FED. MFG. CODE TH IS 1EN1-6 SWITCH - ENCLOSED a Honeywell Division LISTING MILITARY STDS PART NO. MS 2 4 3 3 1 -1 91929 DRAWING HONEYWELL. COVERS TH IS A PROPRIETARY DRAWING IS NOT TO ITEM BE AND 5 0 1.0 C D I i 7 2 .0 0 0 L I S TI N G

M100M

Abstract: M100A M100B M100D M100G M100J M100K
Contextual Info: M100A thru M100M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC