M-BOND GA - 61 A Search Results

M-BOND GA-61

Abstract: dupont mylar rohs degreaser GA 61 Vishay GT-14
Contextual Info: M-Bond GA-61 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND GA-61 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A • • • • • • • M-Prep Neutralizer 5A

Contextual Info: M-Bond GA-61 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND GA-61 INSTALLATION: •          CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges

14046

Abstract: dian M-BOND GA-61 LD50 14046 application note GA-61 M-BOND GA-61 part b M-Bond GA - 61 A
Contextual Info: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond GA-61 Part B November 23, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM017I 919-365-3800 CHEMTREC 1-800-424-9300 (U.S.)

28064-14-4

Abstract: M-BOND GA-61 CAS No. 28064-14-4 A 27611 MATERIAL SAFETY 29CFR1910 transistor A 27611 LD50 polyglycidyl M-Bond GA - 61 A
Contextual Info: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond GA-61 Part A November 23, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM016I 919-365-3800 CHEMTREC 1-800-424-9300 (U.S.)

Contextual Info: DATA SHEET G a As MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: /u rn Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 - Ga = 9.0 dB TYP. at f : 12 GHz Gate length: Lg

ze 003

Abstract: 001-120 115-13 ZE 004 TGA6345-EEU
Contextual Info: Product Data Sheet 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression 6 dB Typical Noise Figure

Contextual Info: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim

Contextual Info: Discrete MESFET l"fl^ ET A M V V • ■ # 0.5 iim x 300 Mm FET £ 1.5-dB Noise Rgure with 11-dB Associated Gain at 10-GHz £ 2.5-dB Noise Rgure with 7-dB Associated Gain at 18-GHz Q All-gold Metallization for High Reliability Recessed Gate Structure DESCRIPTION

i678

Contextual Info: TGF4250-SCC, POWER MICROWAVE HFET A U G U S T 1994 0.5 |am x 1200 |am FET Output Power 28 dBm at 8.5 GHz Power Added Efficiency 50% at 8.5GHz ?!"!"!?!?! !?!?!?!?!?!?! 8.5dB Typical Large Signal Gain Size: 0,609 x 0,737 x 0,102 mm 0.024 x 0.029 x 0.004 in

microwave fet

Contextual Info: TGF1350-SCC LOW-NOISE MICROWAVE FET AP PR O VAL 5079 0.5 |am x 300 |am FET 1.5-dB Noise Figure With 11-dB Associated Gain at 10 GHz 2.5-dB Noise Figure With 7-dB Associated Gain at 18 GHz Ail-Gold Metallization for High Reliability Recessed Gate Structure

TGA6316-EEU

Contextual Info: Product Data Sheet 6 - 17 GHz Dual-Channel Power Amplifier TGA6316-EEU Key Features and Performance • • • • • • 6 to 17 GHz Frequency Range Dual Channel Power Amplifier 20.5dB Typical Gain, Single Channel 1.5:1 Typical Input SWR, 2.1:1 Typical

Contextual Info: TGF1350-SCC Discrete MESFET 0.5 \im x 300 iim FET 1.5-dB Noise Figure with 11-dB Associated Gain at 10-GHz 2.5-dB Noise Figure with 7-dB Associated Gain at 18-GHz All-gold Metallization for High Reliability Recessed Gate Structure PHOTO ENLARGEMENT DESCRIPTION

transistor TT 3043

Abstract: IJEAD
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP

400M

Abstract: 430M 470M RA30H4047M1
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

lt 7210

Abstract: 470M RA30H4552M1 RA30H4552M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to

RA60H4047M1-101

Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

lt 7245

Abstract: lt 7210 440M 470M RA60H4452M1 RA60H4452M1-101 POUT70
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

lt 7210

Abstract: 400M 430M 470M RA60H4047M1 RA60H4047M1-101 RA60H4047M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to

d408

Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

RA45H7687M1

Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

Contextual Info: MwT-A1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y Units in tun I T 10 dB GAIN A T 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz T O 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

low noise pseudomorphic

Contextual Info: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE