M TRON Search Results

case to106

Abstract: 2n5163 TO-106 5458 MEF3069 MEF103 2N4303 2N3070 245C 2N 5163
Contextual Info: fl-Channel Junction F E T General Purpo/e Tron/i/lor/ r BVg ss Yfs •d s s T Y P E NO. m in . m in ./m a x . m in ./m a x . V GS o ff m a x. ^iss Crss NF @ 1KHz ' gss m ax. m a x. m ax. m a x. 2.5dB 2 .5dB 4 .0 d B 4 .0 d B 1.0dB 1.0dB TYPE. 0 .1 0 n A

BF178

Abstract: BC117 BF157 BF 145 BF179 bf336 BFX98 BF156 250V 100MA NPN C 4927
Contextual Info: High Voltage Tron/i/tor/ A E le c tric a l C ha ra cte ristics @ T a * 2 5 °C M a xim u m Ratings / T Y P E NO. NPN ic Pd BVC BO L V c EO hpE @ V c e @ ' c bvebo v C E sat @ V c/ I b Cob m ax. m ax. m in . f T @ Ic CASE PNP @ T a = 25°C m in ./m a x . 2N

television internal parts block diagram TA 8719

Abstract: 78054GC nec 78056gc mpd78054 78058GC 2SC 3205 uPD78052 uPD78052Y uPD78053 uPD78053Y
Contextual Info: mPD78054, 78054Y SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER m PD78052 m PD78053 m PD78054 m PD78P054 m PD78055 m PD78056 m PD78058 m PD78P058 1992 m PD78052Y m PD78053Y m PD78054Y m PD78P054Y m PD78055Y m PD78056Y m PD78058Y m PD78P058Y Document No. U11747EJ4V0UM00 4th edition

Contextual Info: TMS29F002RT, TMS29F002RB 262144 BY 8-BIT FLASH MEMORIES SMJS848A-MARCH 1997- REVISED NOVEMBER 1997 PRODUCTPREVlewWomwttoncooc*mi products Intht lefinfivt or S phaw of dtwtfepawnt. O m e tte te dad mé otìm A m eedw lyfB elfcTeesiw troneitem ew M «heriatto

Contextual Info: 4 DHAWING 15 UNPUBLISHED CDPTRICHT 1? AMP 1471-9 REV 11JUN9? 3 REIEA5ED FDR PUBUWTIDN BY AMP INCORPORATED. . RIGHTS RESERVED. Tronalotid 050410^02281^ ^YrHMQCI.hhMHSS^ frmp 09—MAR-98 I 1:40:16 am p 35397/h o m e /aa rv026d /d »k04/d ep M 02 3/o m p 35397/sd m m o d

78F0034

Abstract: Nec 78F0034 78F0034Y 780024Y 780034Y PD780021 PD780022 PD780023 MPD730 uPD780031
Contextual Info: m PD780024, 780034, 780024Y, 780034Y SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY m PD780021 m PD780022 m PD780023 m PD780024 m PD780021(A) m PD780022(A) m PD780023(A) m PD780024(A) 1996 m PD780031 m PD780032 m PD780033 m PD780034 m PD780031(A)

SDA-500 power inverter

Abstract: 78F0058GC-8BT sips20 mPD78F0058GC-3B9 780054GC 780058Y uPD780053 uPD780054 uPD780054Y uPD780055Y
Contextual Info: mPD780058, 780058Y SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLERS PRELIMINARY m PD780053 m PD780053Y m PD780054 m PD780054Y m PD780055 m PD780055Y m PD780056 m PD780056Y m PD780058 m PD780058Y m PD78F0058 m PD78F0058Y 1994 1997 Document No. U12013EJ1V0UM00 (1st edition)

eh3a

Abstract: fl429
Contextual Info: SK3843 DATEREV 7-1 01% NC PC0 TRONC INDU9TRIEB BELEVEB THE DATA ON THE OMMNB TD E m i/ M L C . SM CC THE TECHNICAL MrORMCTDN B GNEN PHEE T CHARGE. TH E USER EMFLOTB s u m HFPWUflDN AT HB OWN DISCRETION AND R B K . PO STRdN C M 1U 5T R E5 ASSUUCS NO m P D N S D L r r r FOR RESU LTS CHTAINHJ OR n i m c w

BC207B

Abstract: bc208b BC170C BC208 BC207 BC208C bc 209 BC170A BC209 bc209b
Contextual Info: /moll /ignal Tron/i/lor/ f Ele ctrical C h aracte ristics @ M axim u m Ratin gs r T Y P E NO. NPN Pd •c BVq bO lv Ceo h F £ @ V C E @ 'C B V EBO m in ./m ax. @ T a = 2 5 °C V C E s a t @ > C ^ B Cob m ax. m ax. BC BC BC BC BC 168 16 8 A 16 8 B 1 68C

VW-1 H

Contextual Info: HOSIDEN Insulating Caps • « r h * + -y 7 & m m m * «t v n + m s m # e><7 *f«m tc jr S IC ttW ■Insulating Caps can be used for dust protection and protection of ICs from damage caused by static electricity from outside of elec­ tronic equipment. S itff li: L T t t fflT S S T o

11-ANI1

Abstract: uPD784035 uPD784035Y uPD784036 uPD784036Y uPD784037 uPD784037Y uPD784038 uPD78P4038 T9T marking
Contextual Info: m PD784038, 784038Y SUBSERIES 16/8-BIT SINGLE-CHIP MICROCONTROLLERS Preliminary HARDWARE m PD784035 m PD784036 m PD784037 m PD784038 m PD78P4038 1994 1996 m PD784035Y m PD784036Y m PD784037Y m PD784038Y m PD78P4038Y Document No. U11316EJ1V0UM00 (1st edition)

2N3645

Abstract: 2N4354 2N3638A pnp 500ma 40v 2N3644 bpf 200mhz 30PF 2N4142 2N4143 50 G A 4314
Contextual Info: General Purpo/e Tron/i/lor/ pnp r E le c tric a l C h a ra c te ristic s @ M a x im u m R a tin g s T Y P E NO. Pd PNP •c BVc b O 1 -V c E O BVebo h p E @ V C E @ 'C m in ./m a x . @ T a = 25°C v C E sa t I c ^ B = 25°C Cob m ax . m ax . fT @ l C

BC118

Abstract: 2N3692 2N3694 2N5133 BC107 BC135 MA4101 108B 40MHZ me4102
Contextual Info: /moll /ignol Tron/i/tor/ npn TO-IO« TO- 18 f E le c tric a l C h a ra c te r is tic s @ T A = 2 5 ° C M a x im u m R a tin g s \ TYPE NO. BVc b O O CÛ UJ > co 'C O UJ ü > Pd h p E @ V ç e @ *C V C E s a t @ ' c / ' b Cob m ax. m ax. NPN m in . /m a x .

TO71

Abstract: uPD780921 uPD780922 uPD780923 uPD780924 uPD780961 uPD780962 uPD780963 uPD780964 uPD78F0924
Contextual Info: mPD780924, 780964 SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY m PD780921 m PD780922 m PD780923 m PD780924 m PD78F0924 1997 m PD780961 m PD780962 m PD780963 m PD780964 m PD78F0964 Document No. U12071EJ1V0UM00 (1st edition) Date Published January 1997 N

EPROM M2764af1

Abstract: m2764af1 EPROM 2764a M2764A20F1 M2764A-2F1 - SGS M2764A M2764A-2F1 2764A M2764A-20F1 M2764A-3F1
Contextual Info: ses M2764A,î' I ADVANCE DATA 64K 8K x 8 UV ER ASABLE PROM FAST ACCESS TIME: 200ns 250ns 300ns 450ns M AX M AX M AX MAX M 2764A-2F1/M 2764A-20F1 M 2764AF1/M 2764AF6/M 2764A-25F1 M 2764A-3F1/M 2764A-30F1 M 2764A-4F1/M 2764A-4F6/M 2764A-45F1 0 to 70 °C STANDARD TEM PERATURE

uPD78011H

Abstract: uPD78012H uPD78013H uPD78014H uPD78P018F uPD78P018FDW
Contextual Info: mPD78014H SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLERS m PD78011H m PD78011H A m PD78012H m PD78012H(A) m PD78013H m PD78013H(A) m PD78014H m PD78014H(A) m PD78P018F m PD78P018F(A) 1997 Document No. U12220EJ1V0UM00 (1st edition) Date Published June 1997 N

SD7805

Abstract: 78058fgc 78058FY uPD78056F uPD78056FY uPD78058F uPD78058FY uPD78P058F uPD78P058FY 78058F
Contextual Info: mPD78058F, 78058FY SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER m PD78056F m PD78058F m PD78058F A m PD78P058F m PD78056FY m PD78058FY m PD78058FY(A) m PD78P058FY Document No. U12068EJ1V0UM00 (1st edition) Date Published May 1997 N Printed in Japan 1997

M6112

Contextual Info: M tronPTI .when timing matters M611x HCMOS/Clipped Sinewave TCXO/TCVCXO <>"V -40°C ~+85°C T ^ :^ 3 .0 V , 3.3V, 5.0V^ ft t&'f&'f “f £ ^ ^ |a ffl8 - 5 2 M H z # j$ 6 ( lG * $ y t : 1.5ppb/G M M U % ( W L A N ) £-SM£ i S'] i t $. f t (GPS) MtronPTI

2X20 pin angle

Abstract: 0326R
Contextual Info: r CZIhZmIIÌ^^ H tifili ott% N u m i ffaprodocfen or ioouo lo lè i portiti in oy forai ^néovot io noi ponMtlod wVwut vriMm ouKhority troni Ilio pnpriotor« ta » « V « t o c D£CIWMCS 1m énito dndHMHt ra m o . Rtproducton tu m n h h Im o t a in • M R fi

M-tron 1 mhz crystal oscillator

Abstract: mtron crystal oscillator m-tron M-tron 16 mhz crystal oscillator mtron crystal oscillator 24 MHz ML-ST-D202 M-tron MHO mtron M-tron 50 mhz crystal oscillator M-tron crystal oscillator
Contextual Info: C o m p e t it iv e l y P riced H C M O S " O s c il l a t o r s M-tron MHO quartz crystal clock oscillators combine M-tron quality crystal technology with modern HCMOS logic in an industry standard herm etically sealed enclosure. An enable/disable input is included as an optional feature to facilitate

k 3878

Abstract: SK3900
Contextual Info: PC0 TRONC INDU9TRIEB BELEVEB THE DATA ON THE OMMNB TD E m i/M L C . SMCC THE TECHNICAL MrDRVWTDN H GNEN PHEE T GHARGE. THE U3ER EVFLCh'B SUCH H F P fflU flD N AT HB OWN DISCRETION AND R B K . PDSTRaNC IM 1U5T R B ASSUUCS NO m P D N S D L r r r FOR RESULTS OTAINED OR n i m c w

18-Stage Binary Counter

Abstract: block digram 22PF MN6270 A18T
Contextual Info: PANASONIC INDL/ELEK -CIO 7S D e | ^ 3 5 6 5 5 □DDb75a M •«‘Sy ,6 9 3 2 8 5 2 PANA SONIC INDl.t g.LEC TRON ICL *SV«•? ‘r SZsIiiiZZZE^ZEZ&iii MN6270 M N 6270 9 -f A ^ — X fflC M O S /C M O S Circuit for Tim e-Base Generators ^ B E S S /P in MN6270 •>

FIT4 diode

Abstract: BA1360 BA1360F
Contextual Info: i y U *> 7 ^ IC/'M onolithic ICs m m ±<D zm Precautions for Use • e * • m m m o it M • Storing and Transporting ICs 1 i C f ò i g t i m & T n M t t c z<r>W5±<r>t:ih, (1) To p revent lead oxidation w hen ICs are stored, s to r­ % * > '< < m a ge should be done as clo se to room te m p e ra tu re as

JAPANESE 2SC TRANSISTOR 2010

Abstract: JAPANESE TRANSISTOR 2SC 2010 780308Y uPD780306 uPD780306Y uPD780308 uPD780308Y uPD78P0308 uPD78P0308Y led uv 254nm
Contextual Info: mPD780308, 780308Y SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY m PD780306 m PD780308 m PD78P0308 m PD780306Y m PD780308Y m PD78P0308Y Document No. U11377EJ1V0UM00 (1st Edition) Date Published August 1996 P Printed in Japan 1996 1993 NOTES FOR CMOS DEVICES