M 338 H Search Results

LT805

Abstract: ic 339 LT8050
Contextual Info: M/A-COM/ MICRO EL EC TR ON IC S SbM51fl3 DOÜOblD Ô25 fc.'ìE 3 IMACO 4 0 IC Ô M GaAs SPDT Terminated Switch DC-2.5 GHz Features SW-338, SW-339 SO-8 • Very Low Power Consumption: 75 |iW • Low Insertion Loss: 0.5 dB • High Isolation: 33 dB up to 2 GHz SW-338)

Contextual Info: 10 -Hi] B ( 1.75) n n n n n n n n n n H n n jm m ^{\ R4 =9 . ro — f- T *I -n jL n jim m m w im w L fU L n ji(5.4) SECT F IT T IN G NAI Z-Z 25.5 23 .6 27. 51338-1274 5 338- 209 20 21.5 19.6 23.1 51338-1674 51338-1009 100 19.5 17.6 21.1 51 338-0974 51 33 8- 0 99 9

Contextual Info: a/7 A M P com pany GaAs SPDT Terminated Switch DC - 2.5 GHz SW-337, SW-338, SW-339 V2.00 Features SO-8 PIN i H H H • V ery Low P o w er C onsum ption: 7 5 pW O rientation m ark PIN 1— • Low In sertio n Loss: 0 .5 dB • H igh Isolation: 33 dB up to 2 GH z SW -337, SW -338

m 338 h

Contextual Info: M an A M P co m pa n y GaAs SPDT Terminated Switch DC-2.5 GHz SW-338, SW-339 SO-8 Features • V ery I.o w P o w e r C o n s u m p tio n : 75 |i\X • I.o w I n s e r tio n Loss: 0 .5 dl! • H ig h Iso la tio n : 3 3 dB u p to 2 G H z SW -338 28 cJB up to I i ¿Hz (SW-339)

KD 338

Contextual Info: SIEMENS SIPMOS Power Transistor Type BUZ 338 I N channel Enhancem ent mode Avalanche-rated W I • • • BUZ 338 500 V la ^DS on Package 1> O rdering Code 13.5 A 0.4 a TO -218 AA C67078-S3126-A2 M axim um Ratings Param eter Symbol Continuous drain current, Tc = 28 "C

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

Contextual Info: AMPMODU .100 [2.54] Centerline Board-to-Board Headers Catalog 1307612 Revised 7-01 S tan d ard H eaders— U n shrouded, T rip le -R o w , .100 [2.54] C en terlin e .025 [0.64] Square Straight Post H m H H .338 [ 8 . 59 ] mm mm // m m is h m mm Material and Finish:

2S0880

Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Contextual Info: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U

hitachi

Abstract: IC 401 HITACHI HDL6M05584 M/M/din 4901
Contextual Info: Hitachi America, Ltd. SEMICONDUCTOR and IC DIVISION Hitachi A m erica, Ltd. Sem iconductor & IC Division Hitachi Plaza 2000 Sierra Point Parkway Brisbane, CA 94005-1819 Telephone: 415-589-8300 Telex: 17-1581 Twx: 910-338-2103 FAX: 415-583-4207 REGIONAL OFFICES

ICA 700 Y

Abstract: telephone
Contextual Info: Hitachi America, Ltd. SEMICONDUCTOR & I.C. DIVISION Hitachi A m erica, Ltd. Sem iconductor & I.C. Division Hitachi Plaza 2000 Sierra Point Parkway Brisbane, CA 94005-1819 Telephone: 415-589-8300 Telex: 17-1581 Twx: 910-338-2103 Fax: 415-583-4207 REGIONAL OFFICES

D0205AB

Abstract: 1N3164 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174
Contextual Info: tary Silicon Power Rectifier a N3164 N3174 Dim. Inches M inim um A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - UNF 1.250 1.375 5.90

Contextual Info: H itachi A m e ric a , Ltd. SEMICONDUCTOR & I.C. DIVISION Hitachi America, Ltd. Semiconductor & I.C. Division Hitachi Plaza 2000 Sierra Point Parkway Brisbane, CA 94005-1819 Telephone: 415-589-8300 Telex: 17-1581 Twx: 910-338-2103 FAX: 415-583-4207 REGIONAL OFFICES

LN2054

Abstract: 1N1660 1N1661 1N1670 1N1671 1N2054 1N2055 1N3260 1N3261 1N4044
Contextual Info: Silicon Power Rectifier N4044—1N4056 rs * 1 Dim ï M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - c -H Inches M l- 1.218 1.350 5 .300 .793 .300 -.660 .338 .665 -.050 3 / 4 - 1 6 UNF 1.250 3 0.9 4 1.375 34.29 5.900

150C100B

Contextual Info: Silicon Controlled Rectifier Series 150C Dim A B D E F G H J K M N P M illim e te r Inches Minimum 1.237 7.428 7.382 1.047 .365 - .660 .338 .625 .140 Maximum Minimum 1.243 7.671 8.100 1.077 .385 1.383 .749 .348 .687 .150 .295 31.42 188.67 187.50 26.59 9.27

TM5005

Contextual Info: SEI 8 BitA/D Converter -Radiation Hardened ^ / QA D p f O O t l\ m For Space Applications s I I V -o -o -o -o -o F IT 000034D ÔSÛ 338 CONVERTER 'lO H E m D Tel: 619 452-4167 Fax: (619) 452-5499 INTERNET: 102005.1635@COMPUSERVE.COM to INCORPORATED A ELECTRONICS

UN412Y

Abstract: UN421D UN421E UN421L UN511D UN511E UN511F UN511L UN511M UN521D
Contextual Info: - 338 - m % UN412Y tt töT _ ffl « Digital Wik&fä Ta=25T;, *EP(äTc=25T; VcBO Vc e o iC(DC) (V) (V) (A) -50 _ Pc* (W) (W) m ICBO (max) <WA) VcB (V) m (min) hp m & 14 (max) Vc e (V) (Ta=25'C) Ic /I e (A) OTOtyp (max) (V) -50 -0. 5 0.3 -1 -50 50 -10 -0.1

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> w tis s - 001S030 M GFX38V0005 338 • 1 0 .0 — 10.5G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 8 V 0 0 0 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 10.0 ~ 10.5

1N1662

Abstract: 1N2056 1N1660 1N1661 1N1670 1N1671 1N2054 1N3260 1N4044 1N4045
Contextual Info: Silicon Power Rectifier 1N4044—1N4056 Dim Inches M illim eter Minimum Maximum Minimum Maximum N otes A B C D F G H J K M R S 1.218 1.350 5 .30 0 .793 .300 -.660 .338 .665 -.050 3 /4 -1 6 1.250 1.375 5 .90 0 .8 28 .3 25 .9 00 .749 .3 48 .755 1.100

m338a

Abstract: LLM338 LM338 m 338 h 338P
Contextual Info: SEMTECH CORP SfiE D • ô 13^ 1 3 Q O O S m Tfil LLM 138, LLM 338, LLM 338P 5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L MINIM UM M AXIM U M UNITS 35 Volts Input-O utput Voltage V|N " VouT D ifferential Pow er

Contextual Info: Military Silicon Power Rectifier 1N3164 - 1N3174 Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - Maximum Minimum UNF

Contextual Info: CARD EDGE CONNECTORS Applicable for 303, 305, 306, 307, 310, 315, 316, 317, 321,325, 327, 333, 336, 337, 338, 340, 341,342, 345, 346, 355, 356, 357, 379, 384, 387, 391,392, 395 and 396 Series NO MOUNTING LUGS CONNECTOR CODE X02, x04 & x09 - THROul .H M U J N I ifMt- HOLKS

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

BD 338 N

Abstract: TRANSISTOR BD 338 BD336
Contextual Info: _ J BD332; 334 BD336; 338 V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

IMI7340

Abstract: IMI7160 IMI7000 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620
Contextual Info: m iT O Q Q ^ A M IU f CMOS GATE ARRAY NTERNATIONAL M IC R O CIR CU ITS I NC TELEPHONE: 408 263-6300 TWX: 910 338 2032 FAX: 408 263-6571 Oxide-isolated silicon-gate process Dual level metalization Fully autoroutable 792 to 12,000 2-input NAND equivalents Up to 220 I/O connections