M 338 H Search Results

LT805

Abstract: ic 339 LT8050
Contextual Info: M/A-COM/ MICRO EL EC TR ON IC S SbM51fl3 DOÜOblD Ô25 fc.'ìE 3 IMACO 4 0 IC Ô M GaAs SPDT Terminated Switch DC-2.5 GHz Features SW-338, SW-339 SO-8 • Very Low Power Consumption: 75 |iW • Low Insertion Loss: 0.5 dB • High Isolation: 33 dB up to 2 GHz SW-338)

Contextual Info: 10 -Hi] B ( 1.75) n n n n n n n n n n H n n jm m ^{\ R4 =9 . ro — f- T *I -n jL n jim m m w im w L fU L n ji(5.4) SECT F IT T IN G NAI Z-Z 25.5 23 .6 27. 51338-1274 5 338- 209 20 21.5 19.6 23.1 51338-1674 51338-1009 100 19.5 17.6 21.1 51 338-0974 51 33 8- 0 99 9

m 338 h

Contextual Info: M an A M P co m pa n y GaAs SPDT Terminated Switch DC-2.5 GHz SW-338, SW-339 SO-8 Features • V ery I.o w P o w e r C o n s u m p tio n : 75 |i\X • I.o w I n s e r tio n Loss: 0 .5 dl! • H ig h Iso la tio n : 3 3 dB u p to 2 G H z SW -338 28 cJB up to I i ¿Hz (SW-339)

Transistor 337

Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Contextual Info: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier

Contextual Info: AMPMODU .100 [2.54] Centerline Board-to-Board Headers Catalog 1307612 Revised 7-01 S tan d ard H eaders— U n shrouded, T rip le -R o w , .100 [2.54] C en terlin e .025 [0.64] Square Straight Post H m H H .338 [ 8 . 59 ] mm mm // m m is h m mm Material and Finish:

2S0880

Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Contextual Info: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U

D0205AB

Abstract: 1N3164 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174
Contextual Info: tary Silicon Power Rectifier a N3164 N3174 Dim. Inches M inim um A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - UNF 1.250 1.375 5.90

LN2054

Abstract: 1N1660 1N1661 1N1670 1N1671 1N2054 1N2055 1N3260 1N3261 1N4044
Contextual Info: Silicon Power Rectifier N4044—1N4056 rs * 1 Dim ï M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - c -H Inches M l- 1.218 1.350 5 .300 .793 .300 -.660 .338 .665 -.050 3 / 4 - 1 6 UNF 1.250 3 0.9 4 1.375 34.29 5.900

Contextual Info: SW-338 GaAs SPDT Terminated Switch DC - 2.5 GHz Rev. V7 Functional Schematic Features • • • • • • • M/A-COM Products Very Low Power Consumption High Isolation: 30 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed

UN412Y

Abstract: UN421D UN421E UN421L UN511D UN511E UN511F UN511L UN511M UN521D
Contextual Info: - 338 - m % UN412Y tt töT _ ffl « Digital Wik&fä Ta=25T;, *EP(äTc=25T; VcBO Vc e o iC(DC) (V) (V) (A) -50 _ Pc* (W) (W) m ICBO (max) <WA) VcB (V) m (min) hp m & 14 (max) Vc e (V) (Ta=25'C) Ic /I e (A) OTOtyp (max) (V) -50 -0. 5 0.3 -1 -50 50 -10 -0.1

Contextual Info: Military Silicon Power Rectifier 1N3164 - 1N3174 Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - Maximum Minimum UNF

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

BD 338 N

Abstract: TRANSISTOR BD 338 BD336
Contextual Info: _ J BD332; 334 BD336; 338 V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered

IMI7340

Abstract: IMI7160 IMI7000 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620
Contextual Info: m iT O Q Q ^ A M IU f CMOS GATE ARRAY NTERNATIONAL M IC R O CIR CU ITS I NC TELEPHONE: 408 263-6300 TWX: 910 338 2032 FAX: 408 263-6571 Oxide-isolated silicon-gate process Dual level metalization Fully autoroutable 792 to 12,000 2-input NAND equivalents Up to 220 I/O connections

ic 723 cn

Abstract: ZIP9 BA336 BA338 BA338L song ic
Contextual Info: Audio ICs Mute detector 1C BA336/BA338/BA338L T h e BA336, B A 338 and B A 338L are m onolithic ICs d esig ned for m ute d etectio n and tap e end d etectio n . W h en a duration of silence 52dB m or less exceeds the tim e constant set with an external CR circuit, a sorig g ap is identi­

2SC1815

Abstract: 25c1815 2SC945 2SC1740 2SC945 Y 2SC763 2SC1275 2sc1949 2SC829 2sc1741
Contextual Info: - m £ 2SC 328 2SC 329 * 2SC 330 * 2SC 331 * 2SC 332 * 2SC 333 * 2SC 334 * 2SC 335 * 2SC 336 * 2SC 337 ^ * 2SC 338 * 2SC 339 * 2SC 340 ^ * 2SC 342 * 2SC 343 * 2SC 350 •>' * 2SC 351 * 2SC 354 Manuf. # 3 SANYO Ä 3Ë TOSHIBA 2SC3S7A G TM s a NEC s i HITACHI

BC338C

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage

jd 1801

Abstract: HT 1200-4 enb221 ENB221D-07A
Contextual Info: - 338 — '<> T . ? * ± * - 346- 3l"Qd I l-Q d - L K - Ol-Qd 6-Qd s tr E lí8 - ^ > <miu CD : T r > * |a ig ^ > CO •C* - 351 - - 352 - < '■ •J~ ì3r 1*1 f ö :m m > - HT-1 HT-2 77)4.5 30.2*«' 1 189*» “ ) ■<rJ21.5MAX (0 846) '4 -Æ « - - i— t - - i-

1N3162

Abstract: D0205AB n316 1N3161 1N3163 1N3164 1N3165 1N3166 1N3167 1N3168
Contextual Info: —I MI— Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1/2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Maximum Minimum 3 /4 -1 6 1.218 1.350 5.30 .793 .300 - .660 .338 .665 .125 - UNF

Contextual Info: V IT R O H M series POWER RESISTORS_ KWP - Types 330-3/5, 332-3/5, 333-3/5, 335-3/5, 336-3/5, 337-3/5, 338-3/5 CO sg < O t < 5 o. 2 < Ho Power Wirewound Resistors radial, fibre glass core, ceramic case Dimensions: 33x-3 CO Temperature rise: hot-spot

84fl

Abstract: MAX343 I05n
Contextual Info: - 338- M A X343 High-Voltage C M O S/D M O S Analog Switches mm m O N itf 'f t u rn V +/V " R on A T Vs = V + R on A T V S = V +2 0 V /- 2 0 V 127a + 3 0 W - 3 QV iosa ♦ 4 0 V / - 4 ÛV 92n 84n 127H 1050 39H 3 6 ÌÌ 320 3o n 39fl 36 Í1 +50V /- 50V ♦ 4 0 V /G N D

Contextual Info: B F M I h HI ^ r? ^ n -n c iD L s U V /U U L s U = ^ L r iJ February 10, 1998 5 AMP POSITIVE ADJUSTABLE LM 338 LM338P voltage regulators T E L :8 05 -4 98 -21 11 FAX :805-498-3804 W E B :http://www.sem tech.conn ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL

2SD636

Abstract: 2SD636 Matsushita RT1N241C DTC124EK 2SC3281 upa74ha 3394 2SC3372 NEC 3377 RT1N441C
Contextual Info: - sa « Type No. tt 2SC 3365 ^'' 2SC 3366 2SC 3367 ISO 3368 2SC 3369 2SC 3370 2S0 337 3375 3376 3377 3378 3379 2SC 2SC 2SC 2SC 3380 338] 3382 3383 m h SANYO S ÎL 2SC3277 B S ÎL 2SD1236 2SD1236 ÍL fâ T T ta 2SC3257 2SC3137 B ÎL 3K S X «£ □— A

Contextual Info: MN1631 M N 1 6 3 1 £ • 7 # - f $ H 1St / S u b Channel Adaptor (S in g le V oltage Supply' ( # — n ^ /D e sc rip tio n M N 1631 ¡ ± , -f ^ U n it ^ mm 16 fcf -y h -? i •7 / 7 7 1 2t 9 v a y e j. - ? ■ ^ x f i n t r T\ =340 339 338 3d 4t 5C