LVJ DIODE Search Results

300C

Abstract: E62A w55e
Contextual Info: I DATE : PREPARED BY: SPEC.NO. SHARP APPROVED BY: ELECTRONIC COMPONENTS GROUP SHARP CORPORATION DATE : SPECIFICATION ISSUE DG-958080 Au8.30, ‘AGE 8 Pages REPRESENTATIVE DIVISION opTo_ELE~RoN1c DEvlc~ Dry. RI a ~o~lvj DEVICE SPECIFICATION FOR Gap Yellow-green

1N3157A

Abstract: motorola 239 zener AMERICAN POWER DEVICES 1N938
Contextual Info: AMERICAN POWER DEVICES S'lE D LVJ 0737135 • • • • • 5 5 630 • A P D T r ^ - t o AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference to Motorola part numbers. For applications where output voltages must remain within narrow limits during changes in input voltage,

Contextual Info: DG526, DG527, DG528, DG529 H A R R IS X Semiconductor lVj t f April 1999 fO ca" Analog CMOS Latchable Multiplexers ceov Ceo1 e r t *La ' \ OÏ Features Description • Direct RESET The DG526, DG527, DG528, and DG529 are CMOS Monolithic 16-Channel/Dual 4-Channel Analog Multiplexers.

BUZ10

Contextual Info: 37E SEMELAB LTD D • Ö13B1Ö7 □ □ □ 0 E 3 ci M ■ SNLB % 1*4 0 4 o 'f 7F SEMELAB BUZ 10 M O S POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm lVJ. 3 _ 10 r max. ma A . 5 m ax 1.3 5 .9 T m in . APPLICATIONS 5.1 15.8 sL | J m ax.

D4L20U

Abstract: D4L20 SHINDENGEN DIODE LVJ DIODE
Contextual Info: U * < y P - P K m m U tipe Super Past Recovery Diode Single Diode OUTLINE DIMENSIONS D4L20U Case : ITO-220 200V 4A •trr3 5 n s m « •S R « I S [18 myo-fc' b ® • m m . OA. s m • » fa . * » . • Æ tè * (D n fa RATINGS A b so lute M ax im u m Ratings

z42n

Abstract: S1ZB40 Z62N S1wB s s42n BA40 S1ZA40 4D DIODE LVJ DIODE s1wbs
Contextual Info: —K Diode, “ 1Z Type” Case V42N fr, .in Y^'f; Type No. ' . ¡V, 14 jfs. n -i-awfl» Dan* code ^o.ihi 0'6 " :U t „2 .5 jo 2: 4.7 • 0.¿ ; u |.r u 7T-<T C T LÎ2» j & c i [U nit • mm] &C C •S T ypi1 No. Item V rm [V ] S1ZA20 S1ZA40 S1ZA60 S1ZB10

MA152

Abstract: 1n5234 itt
Contextual Info: I T T CORP/ I T T CMPNTS 41E D • 4bfl2bfl4 QDG14DS T ■ ITO TM H I ZENER DIODES 1 N5225 Series 500 mW Glass Zener Diodes in DO-35 Package T. = 25°C I tM?4»onri lN$$ySsrte»{$60 Ndf»).] Using the type designations ZMM5225, ZMM5226 and soon, these Zener diodes are available in the MiniMELF package with the same

Contextual Info: |H I ; Diode Modules MDD56 IFRMS ^FAVM V RRM v’ ' VRRM hsm V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol MDD 56-08N1 MOD 56-12N1 MDD 56-14N1 MDD 56-16N1 MDD 56-18N1 =T VR= 0 T vj /¡2dt v jm TVJ = 45°C Vn = 0 =T V R= 0 T vj v jm Maximum Ratings

Contextual Info: TO SHIBA TPS703,TPS704 TOSHIBA PHOTO DIODE SILICON PIN TPS703, TPS704 SILICON PIN PHOTO DIODE FOR REMOTE CONTROL Unit in mm VARIOUS KINDS OF REMOTE CONTROL SYSTEMS 7.0 ±0.2 SM OKE SENSOR OPTICAL COMMUNICATION SENSITIVE CENTER • Detector for visible, fluorescent, and other disturbance light.

Contextual Info: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current

B0239A

Contextual Info: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781

1N935

Contextual Info: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case

Contextual Info: AD VANCED PO W ER Te c h n o l o g y APT6035BN 600V 19.0A 0.350 POWER MOS IV N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: TQ = 25°C unless otherwise specified. Parameter Drain-Source Voltage V DSS APT6035BN

Contextual Info: CO-PAK IGBT SGF40N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls

Contextual Info: T O SH IB A TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8301 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC A PORTABLE MACHINES AND TOOLS . td - - ntr l~\ irr 's • •LVJ J 8 ( U IN ) ~

Zener Diode 3v 400mW

Abstract: 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"
Contextual Info: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current

IN942

Abstract: itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938
Contextual Info: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case

1N3155

Abstract: 1N9351 AMERICAN POWER DEVICES 1N938
Contextual Info: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781

Contextual Info: TOSHIBA TENTATIVE TC7W66F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7W66F, TC7W66FU UNDER DEVELOPMENT DUAL BILATERAL SWITCH The TC7W66 is a high Speed CMOS DUAL BILATERAL SWITCH fabricated with silicon gate CMOS technology. It consists of four independent high speed switches

LVJ DIODE

Contextual Info: e u DEC Technische Information / Technical Information !Ü£££. FZ 1200 R 17 KF6 B2 Hfvb vorläufige Daten preliminary data Höchstzulässige Werte E le k t r is c h e E ig e n s c h a f t e n / / Maximum rated values E le c t r ic a l p r o p e r t ie s

Contextual Info: General-Purpose Interface Bus Transceiver IH 7 C • 1 b O A * w General-Purpose Interface Bus Transceiver w Meets IEEE standard 488-1978 GPIB IR7C163A ■ IR7C160A/IR7C163A General-Purpose Interface Bus Transceiver Pin Connections Description T he IR 7 C 1 6 0 A / IR 7 C 1 6 3 A is an 8-channel in ­

Contextual Info: 6MBI25L-120 25A IGBT ' Ë ± s < r7 - * i * = L - ) U (L SE R IE S) î ' Outline Drawings IG B T M O D U L E F e a tu re s High Sp eed Switching • f c & z . 'f Low Saturation Voltage • W E S E f t (M O S - ir — h f l l i i ) • Voltage Drive Variety of Pow er Capacity Series

B2HKF

Abstract: TTB6C110N TDB6HK110N DDB6U160N B2HKF 250 TDB2HKF85 TDB2HKF B6U 205 N L TTB6C cr 4180
Contextual Info: Fast Asymmetric Thyristors Type V drm V rrm V V V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) It r s m A It s m i i 2dt Itavm^c kA A2s A/°C 10ms 10ms tvj max tvj max *103 400 2,5 30 V(TO) rT (di/d t)cr V m ii A/pis tvj = tvj = DIN I EC tvjma* tvj max 747-6

Contextual Info: P6SMB Series Surface-mount Transient Voltage Suppressor PRODUCT SUMMARY Voltage range 6.8 to 200 Volts 600 Watts Peak Power 3.0 Watts Steady state SMB/DO-214AA FEATURES For surface-mount applications in order to optimize board space. Low profile package. Built-in strain relief.