TTB6C Search Results

KM33-TTB6C95N

Abstract: TTB6C
Contextual Info: B6C - Schaltung Luftselbstkühlung TA = 45 °C mit ISOPACK verst. Luftkühlung TA = 35°C click on MB to select outline Typenbezeichnung SAP Bauelement KK Lüfter MB B6C 230/310 - 45S - KM11-TTB6C95N-RC B6C 230/310 - 60S - KM33-TTB6C95N-RC B6C 230/310 - 75S - KM33-TTB6C165N-RC

GTO hvdc thyristor

Abstract: welding rectifier circuit board thyristor ltt 1590A single phase fully controlled rectifier scr control circuit for welding disc thyristor IGCT high single phase bridge rectifier pin configuration single phase bridge fully controlled rectifier
Contextual Info: Product Information Main Features Thyristors & Diodes • ■ ■ ■ BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up to several giga watts. Besides the standard phase thyristors and rectifier diodes, our

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

B2HKF

Abstract: TTB6C110N TDB6HK110N DDB6U160N B2HKF 250 TDB2HKF85 TDB2HKF B6U 205 N L TTB6C cr 4180
Contextual Info: Fast Asymmetric Thyristors Type V drm V rrm V V V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) It r s m A It s m i i 2dt Itavm^c kA A2s A/°C 10ms 10ms tvj max tvj max *103 400 2,5 30 V(TO) rT (di/d t)cr V m ii A/pis tvj = tvj = DIN I EC tvjma* tvj max 747-6

B2HKF

Abstract: 70N1 B2HKF 125
Contextual Info: TT B2C 70 N TD B2HZ 70 N, TD B2HKF 70 N Typenreihe/Type range_ T T B2C 70 N_ 600_ 800_ 1000_ 1200_ 1400_ 1600* Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Periodische Vorwärts- und

Contextual Info: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC

B2HKF

Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Contextual Info: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °

powerblock TT 95 N 1200

Abstract: B6U 205 N L TTB6C powerblock TT 95 N 1000 powerblock TD 95 N 1200
Contextual Info: ISOPACK Modules T ype V drm > V rrm Ifrmsm V A I fsm l i 2d t ld/T c A /°C A A 2s V dsm = V DRM 10 ms, 10 ms, V rsm = V rrm + 100 V max Tvj max V TO V T"vj - T v) max rT RthJC mQ °C /W T , — T Vj m aK per arm RthCK T VJ max ° c /w °c o u tlin e per arm