LTUN Search Results

Contextual Info: 65 Trituner3-in-lTuningWrench Coilcraft’s Trituner tuning wrench is a unique 3-in-1 tool for adjusting inductors, capacitors and many other variable components. The non-magnetic Trituner is molded of rugged PET thermoplastic material. One end is stepped with a hex tip

Contextual Info: 8M A 0SM Rvcvptvclvv 8urfvcv Ltuneh M IL-C-83517/7 “m s * ~ p5 * _ ra u A *. («) O T U t MAX-I (Mfl 56 Mflttaiy Part N u itiW M/A-COM Part Number •31001 -61003 43001 •33003 20674001-03 2067-0002-62 50 20674001-00 2067400240 50 Dim. A Inohee(mm) Commarolal

Contextual Info: BUS-MATCHING BIDIRECTIONAL FIFO 512 x 1 8 -B IT -1024 x 9-BIT 1024 x 18-BIT - 2048 x 9-BIT Integrated D evice Technology, Inc. IDT72510 IDT72520 FEATURES: DESCRIPTION: • Two side-by-side FIFO memory arrays for bidirectional data transfers • 512 x 18-Bit - 1024 x 9-Bit IDT72510

Contextual Info: Ewmwgcs* AWR8001X 800 MHz -1 GHz Receiver MMIC ADVANCED PRODUCT INFORMATION Your GaAs IC Source RevO FEATURES FUNCTIONAL BLOCK DIAGRAM To External Image Fitter Monolithic Down Converter From External image Filter 2.5 dB Noise Figure 20 dB Conversion Gain Single +5V Supply

Contextual Info: EUPEC blE D • 34032^7 0001114 ‘i'ÏE BiUPEC T T 170 N, T D 170 N, DT170N Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values P eriodische Vorw ärts- und R ückw ärts-Spitzensperrspannung Vorw ärts-StoBspitzenspannung

Toshiba 1SV186 varactor

Abstract: FET J133 1SV186 adc20013 J242 c965 1SV245 varactor capacitor diode Lowpass Filter 3 GHz 950-2050
Contextual Info:  ADC20013 Broadcast Satellite Tuner MMIC Rev 0 INTRODUCTION The ADC20013 downconverter is intended for use in the indoor receiver portion of the DBS Direct Broadcast Satellite System. ANADIGICS' 0.5 µm. depletion-mode GaAs process is used to fabricate this device. The chip downconverts inputs in the 950-2050 MHz band

information applikation mikroelektronik

Abstract: information applikation Mikroelektronik Information Applikation applikation heft mikroelektronik applikation VEB mikroelektronik "Mikroelektronik" Heft mikroelektronik DDR radio fernsehen elektronik "information applikation"
Contextual Info: m o lk ^ o e le l-c ts n a r iik c Information Applikation 31/2 DIGIT CMOS Analog-DigitalWandler G O Q . i m f l k i n i o e l B l H c f a p a r T B Inform ation Applikation Heft C 47: 7 13 6 A / D - W a n d l e r I 1 * *• vm b u w t L frrinkfu r f c / o d f

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

RF MODULE CIRCUIT DIAGRAM

Abstract: RI-ANT-G03C smps 1500 w design tiris field strength meter RI-ANT-G02C siemens transponder antenna RI-RFM-104B ferrite antenna 125 khz 134,2 kHz coil antenna ferrite antenna
Contextual Info: SERIES 2000 READER SYSTEM RADIO FREQUENCY MODULE RI-RFM-104B Radio Frequency Module L_RFM-2 January 1998 Series 2000 Reference Manual January 1998 Radio Frequency Module TABLE OF CONTENTS 1. Introduction . 7

TFK 447

Contextual Info: » SAB 2010 'W Monolithisch integrierte ltung Monolithic Integrated circuit P -K anal MOS, Io n enim p lanta tion P -cha nnel MOS, ion im p la n ta tio n Anwendung: F e rn b e d ie n u n g fü r F a rb fe rn s e h e m p fä n g e r D e k o d ie rs c h a ltu n g fü r d e n U ltra s c h a ll- o d e r In fra ro t-E m p fä n g e r

SFG 10.7MA

Abstract: murata 10.7MA CA3089E Murata EX22741 CA3089 audio squelch circuit design Murata SFG ex22741 CA-3089E Harris CA3089
Contextual Info: CA3089 f u H A R R IS S E M I C O N D U C T O R FM IF System November 1996 Features Description • For FM IF Amplifier Applications in High-Fidelity, Automotive, and Communications Receivers Harris CA3089 is a monolithic integrated circuit that provides all the functions of a comprehensive FM-IF system. The

Contextual Info: N J SIN G LE TONE MELODY U 5 O 1 Series C-M OS GENERAL DESCRIPTION The NJU501 series is a single tone melody C-MOS IC incorporated with 64 notes ROM. It plays the melody using a piezo buzzer and single battery only. The NJU501 has 3 kinds of playing inodes and these

ltun

Contextual Info: fax id: 5603 CY7C960 CY7C961 Low Cost VMEbus Interface Controller Family Features Functional Description • 80-M byte-per-second b lo c k tra n s fe r rates • A ll VME64 tra n s a c tio n s p ro vid e d , in c lu d in g A64/D64, A40/M D32 tra n s fe rs

RF2175

Contextual Info: RF2175 Preliminary  9 0+] /,1 $5 $03/, ,(5 7\SLFDO $SSOLFDWLRQV 2 • Portable Battery-Powered Equipment POWER AMPLIFIERS • 3V TETRA Cellular Handsets • 3V CDMA Cellular Handsets 3URGXFW 'HVFULSWLRQ The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is

ACPR25

Contextual Info: RF2175 3V 400MHz LINEAR AMPLIFIER Typical Applications • 3V TETRA Cellular Handsets • Portable Battery-Powered Equipment • 3V CDMA Cellular Handsets Product Description The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is

mt43c4257adj7

Abstract: sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994
Contextual Info: M T43C 4257A/8A 256KX4 TRIPLE-PORTDRAM MICRON I TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible with 1 M eg VRAM

31063 A

Contextual Info: What H E W L E T T 1"KM PA C K A R D DC-2 .5 GHz 3 V, High Isolation Silicon RFIC Amplifier Technical Data INA-31063 Features • High R everse Isolation -40 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • Single +3V Supply • 15 dB |S21|2 at 1.9 GHz

433MHZ amplifier schematic

Abstract: T25 4 L5
Contextual Info: RF2117 Preliminary


 
      • 400MHz Industrial Radios • Analog Communication Systems • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • 3.6V Analog Handsets
    The RF2117 is a high power amplifier IC. The device is

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

qualcomm msm 8660

Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
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eupec dd 76 n 12 l

Abstract: dd 76 N powerblock powerblock DD 76 N 1200 eupec dd 76 n 1200
Contextual Info: 34032^7 00Ü12MÍ. 3fl3 blE D EUPEC IUPEC DD 76 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tvj —— 40°C . tvj ma* V rrm Stoßspitzenspannung

EUPEC DD 31 N 1200 k

Abstract: powerblock dd 31 EUPEC DD 31 tt 36 n powerblock powerblock tt 45 EUPEC tt 25 N 12
Contextual Info: blE J> m EU P EC 34D3Et17 D0D1237 370 M U P E C DD 31 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte_Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzenspannung non repetitive peak

eupec dd 90 n 12 L

Contextual Info: EUPEC blE T> m 314032^7 OODIBHT OTE « U P E C DD 90 N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values P eriodische Spitzensperrspann ung repetitive p e ak reverse voltage tv j - 40 °C . . . tvj max S toßspitzenspannung

TT265 N 400

Abstract: TT265 EUPEC tt 170 n 12 EUPEC tt 170 n 14 powerblock TD 170 N powerblock tt 45
Contextual Info: EUPEC bl E J> m 34035^7 0001127 SMO « U P E C T T 265 N, TD 265 N, D T265 N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte M axim um rated values Durchlaßstrom -G renzeffektivw ert Dauergrenzstrom repetitive peak forward off-state