LT 1910 Search Results

vishay 86802

Abstract: 81202 KP 460
Contextual Info: KP 460 to 464 Vishay BCcomponents Polypropylene Film Foil Capacitors KP Axial Epoxy Lacquered Type FEATURES 168x12 halfpage 7.2 max ltot (1) ≤1 ≤1 ltot lmax lmax e3 LEADS Ød Ø1.3 lt Supplied loose in box, taped on reel or unidirectional dmax lt 16.5

71303

Abstract: 09101 KP 460
Contextual Info: KP 460 to 464 Vishay BCcomponents Polypropylene Film Foil Capacitors KP Axial Epoxy Lacquered Type FEATURES 168x12 halfpage 7.2 max ltot (1) ≤1 ≤1 ltot lmax lmax e3 LEADS Ød Ø1.3 lt Supplied loose in box, taped on reel or unidirectional dmax lt 16.5

W-band

Contextual Info: RF Transmission Triple Band Tx Module LT-415S Series Features • Small Size 8.5x7.5×1.5mm • High Efficiency(@ANT): 43% for GSM, 36% for DCS/PCS • Low Current Consumption • Low Profile(1.5mm max.) How to Order LT - T 4 15 S1 E q we r t yu qSeries

BLZ5.08

Abstract: BLZ-5.08 connector SL5.08 270LR SL5.08 191094-0000
Contextual Info: Data Sheet • PCB Products Mounting and release options for the Omnimate Range 5.08 /5.00 BLZ 5.0X 90F BLZ 5.08 180LH BLZ 5.08 270LH B LT 5 . 0 8 L H BLZF 5.08 LH BLZ 5.0X 270F BLZ 5.08 180LR BLZ 5.08 270LR B LT 5 . 0 8 L R BLZF 5.08 LR B y i n t ro d u c i n g t h e n e w s c re w f l a n g e

pin function of ic an 5522

Abstract: ltc5534 AN 5522 GRP1555C1H101J LT5522EUF GRP155R71C103K LMK316BJ475ML LT5522 LTC1748 ssb demodulator ic
Contextual Info: LT5522 400MHz to 2.7GHz High Signal Level Downconverting Mixer U FEATURES DESCRIPTIO • The LT 5522 active downconverting mixer is optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a high speed

LZ450

Abstract: LTR5A1215 30304 LTQ6A0260 TCT10 LTQ6A0520 LTQ6E0260T TCT15 transmitter-receiver LTR5E0350T
Contextual Info: Characteristics Safety detection solutions Safety light curtains, type 4 Compact light curtains XUS LT with solid-state output Light curtain type XUS LTQ6pppp 14 mm XUS LTR5ppppp (30 mm) XUS LTY5ppppp (30 mm) Environmental characteristics Conformity to standards

019A25

Abstract: 19AI25 019AI5 LT1019ACN8 AD580 AD581 LM168 LT1019 25R9 LT1637
Contextual Info: LT1019 Precision Reference U FEATURES DESCRIPTIO • The LT 1019 is a third generation bandgap voltage reference utilizing thin film technology and a greatly improved curvature correction technique. Wafer level trimming of both reference and output voltage combines to produce

S38B4A

Abstract: S52K16B S34B14B S52K14B S52K4A S38B12B S52K2A S34B6A S38816A S38B
Contextual Info: . , imemafaonal ii^Rectmer Part Number Thyristors Phase C0ntr0|Type 985-5450 Amps rms lT AV @ Tc Vr r m VDRM (V) >T(RMS) (A) (A) S34B2A S34B2B S34B4A S34B4B S34B6A S34B6B S34B8A S34B8B S34B10A S34B10B S34B12A S34B12B S34B14A S34B14B S34816A S34B16B S34B18A

KP 460

Abstract: 71803 74701 77502 transistor 13002 73301 polypropylene capacitors KP 77509 2222 463 81002 vishay 86802
Contextual Info: KP 460 to 464 Vishay BCcomponents Polypropylene Film Foil Capacitors KP Axial Epoxy Lacquered Type FEATURES 168x12 halfpage 7.2 max ∅d ltot lmax ∅ 1.3 lt Supplied loose in box, taped on reel or unidirectional Lead (Pb)-free and RoHS-compliant product

sn1019

Abstract: 2n2905 replacement 19AI25 LT1019ACN8 AD580 AD581 LM168 LT1019 LTC1019 LT1637
Contextual Info: LT1019 Precision Reference U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1019 is a third generation bandgap voltage reference utilizing thin film technology and a greatly improved curvature correction technique. Wafer level trimming of

74701

Abstract: 2222 463 88201 marking code KP 11802 77509 13001 datasheet 13001 transistor transistor 13002 74703 transistor 13001
Contextual Info: KP 460 to 464 Vishay BCcomponents Polypropylene Film Foil Capacitors KP Axial Epoxy Lacquered Type FEATURES 168x12 halfpage 7.2 max ∅d ltot lmax ∅ 1.3 lt Supplied loose in box, taped on reel or unidirectional Lead (Pb)-free and RoHS-compliant product

Contextual Info: LT1019 Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1019 is a third generation bandgap voltage reference utilizing thin film technology and a greatly improved curvature correction technique. Wafer level trimming of

ltc1019

Abstract: LT1019-5 LT1019CS8-2.5 strain guage LT1019CS8-5 MC1404 MC1400 LT1019ACH-10 ltc1019a AD580
Contextual Info: LT1019 Precision Reference U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1019 is a third generation bandgap voltage reference utilizing thin film technology and a greatly improved curvature correction technique. Wafer level trimming of

146 J122

Abstract: murata M 512 j122 J122 transistor balun diode mixer J-54 rf transmitter receiver 1800Mhz 512 j122 LT5503 capacitor 1.8ghz 100pF 0402 transistor j122
Contextual Info: Final Electrical Specifications LT5512 DC-3GHz High Signal Level Down-Converting Mixer July 2002 U DESCRIPTIO FEATURES The LT 5512 is a broadband mixer IC optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a differential LO

Contextual Info: LT5522 400MHz to 2.7GHz High Signal Level Downconverting Mixer FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 5522 active downconverting mixer is optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a high speed

pin function of ic an 5522

Abstract: AN 5522 ssb demodulator ic 5522 lt GRP1555C1H101J GRP155R71C103K LMK316BJ475ML LT5522 LT5522EUF LTC1748
Contextual Info: LT5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 5522 active downconverting mixer is optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a high speed

LT1213

Abstract: LT1214
Contextual Info: LT1213/LT1214 28MHz, 12V/µs, Single Supply Dual and Quad Precision Op Amps U DESCRIPTIO FEATURES The LT 1213 is a dual, single supply precision op amp with a 28MHz gain-bandwidth product and a 12V/µs slew rate. The LT1214 is a quad version of the same amplifier. The

LT1910IS8

Abstract: 1910e SCR 100V 1A stepper motor using irfz44 SEC irf630 LTC1255 IRFZ34 LT1910 LT1910ES8 1910i
Contextual Info: LT1910 Protected High Side MOSFET Driver FEATURES DESCRIPTION n The LT 1910 is a high side gate driver that allows the use of low cost N-channel power MOSFETs for high side switching applications. It contains a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with

Contextual Info: LT1213/LT1214 28MHz, 12V/µs, Single Supply Dual and Quad Precision Op Amps DESCRIPTIO U FEATURES The LT 1213 is a dual, single supply precision op amp with a 28MHz gain-bandwidth product and a 12V/µs slew rate. The LT1214 is a quad version of the same amplifier. The

LDB311G2705C-428

Abstract: J122 transistor murata M 512 j122 RF 900MHz TO 1800MHz 5512f j122 J173 max 1786 transistor j122 LDB21881M05C-001
Contextual Info: LT5512 1kHz-3GHz High Signal Level Down-Converting Mixer U FEATURES DESCRIPTIO The LT 5512 is a broadband mixer IC optimized for high linearity downconverter applications including cable and wireless infrastructure. The IC includes a differential LO buffer amplifier driving a double-balanced mixer. An integrated RF buffer amplifier improves LO-RF isolation and

Contextual Info: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current

LT 7229

Abstract: lt 7233 LT 7238 lt 7246 LT 7242 LT 7232 LT 7227 VDO Rb3
Contextual Info: 19-1066; Rev 0; 6/96 V M y jX IV M +2.375V, Low-Power, 8-Channel, S erial 12-B lt ADC The 4-wire serial interface directly connects to SPI , QSPI™, and Microwire™ devices without external logic. A serial stro b e ou tp u t allow s d ire ct con ne ction to

4G lte RF Transceiver

Abstract: BGA736L16 bgsf18 LTE filter band 40 BGA749 LTE rf front end 1462 lte RF Transceiver LTE bandpass filter circuit diagram of rf transceiver at 3.5G
Contextual Info: B GA 777L 7 B GA 777L 7 fo r LT E Applic atio ns Sup por tin g B and 38 or 40 with R efe r ence Res i s tor Rr ef= 8.2 k Ω Applic atio n N ote A N 242 Revision: Rev. 1.0 2010-09-02 RF and P r otecti on D evic es Edition 2010-09-02 Published by Infineon Technologies AG

35ME

Contextual Info: m?, NO TE S 1 „ MATERIAL P B T C T ^ I 5 % A lJ HOUSING U L 9 4 V — 0 G.F. 15% 5 - 5 ^ 1 1 : U^raiis HX-V+ CM TERMINAL LT) 2» >Q MATES - l/l PH O S.B RO . P R E - T I N N E D 53290- * * I S 10,-*20 NON-ACCUMULATIVE £• > ?) (P IT C H ) WITH 3 . S S K D V U B O . 2 M A X.