35ME Search Results

1E14

Abstract: 2E12 2N7274D 2N7274H 2N7274R
Contextual Info: REGISTRATION PENDING Currently Available as FRM230 D, R, H 2N7274D, 2N7274R 2N7274H March 2001 Features Radiation Hardened N-Channel Power MOSFETs Package • 8A, 200V, RDS(on) = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Mosfet RM3

Abstract: rm3 transistor ISFET BAV99LT1G smd transistor 6m RK73H1JT1002F DIODE SMD C212 sanyo c35 smd transistor 6p r315 TRANSISTOR
Contextual Info: Application Note 1544 ISL8200MEVAL2PHZ Evaluation Board User’s Guide VOUT = 1V LOAD UP TO 20A PGOOD VIN = UP TO 20V VOUT SENSING POINT MODULE GROUP 2 U301 IOUT STEP SENSING POINT TRANSIENT LOAD CIRCUIT MODULE GROUP 1 (U201) 12V SUPPLY FOR TRANSIENT LOAD

IS-1845ASRH

Contextual Info: Single Event Testing of the IS-1845ASRHPulse Width Modulator Introduction The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latchup SEL , single-event transient (SET) and

2N7313

Abstract: Rad Hard in MOSFET power p channel mosfet rad hard
Contextual Info: HARRIS SEI UCOND SECTOR m H A R R IS U U H arris rc a • oi • D • OBJECTIVE S E M I C O N D U C T O R • 40E 0Q33Û3M T MHAS 2N7313R, 2N7313H n r-.n I .n REG ISTRATIO N PENDING Available As FRM 9430R, FRM9430H in te r s il ' M3G2271 _ i I 11 1 .5 A .-5 0 0 V

2N7326

Contextual Info: i HARRIS U a J HARRIS S E M I C O N D U C T O R RCA GE M305S71 0033647 8 « H A S 4QE J> HARRIS SEPIICONI SECTOR OBJECTIVE 2N7326R, 2N7326H REGISTRATION PENDING Available As FRM9450R, FRM9450H INTERSIL _ 6A, -5 0 0 V RDS on =1.80n This Objective Data Sheet Represents the Proposed Device Performance.

2N7332

Contextual Info: HARRIS SEMICOND SECTOR ffj HARRIS 1 if n - r HARRIS SEMICONDUCTOR RCA GE MOE D OBJECTIVE 4302271 ÜD33ÖS1 T BiHAS 2N7332R, 2N7332H REGISTRATION PENDING Available As FRK9460R, FRK9460H IN T E R S IL -T 1Q A,-500V RDS on =1.20n This Objective Data Sheet Represents the Proposed Device Performance.

6283K

Abstract: LB1291
Contextual Info: Ordering number: EN 1044C M onolithic Digital 1C LB1291 8-Channel Driver Array The LB1291 has been designed for interfacing between low level digital devices and fluorescent display tubes. Its 8 -channel independent Darlington output stage is used for digit or segment drivers. Also, with pull-down equivalent

Contextual Info: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q

12-0-12 transformer used 24v dc supply

Abstract: smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W transistor SMD 12W sot-23 16ME1800WG IC LM 258 smd SMD SJ 57a
Contextual Info: Application Note 1491 ISL6721EVAL3Z: Resonant Reset Forward Converters for Low Power Applications Abstract Design Specifications Low cost, isolated power supplies with multiple outputs are common in many applications such as automotive, security monitoring, telecom, medical instruments, etc.

Contextual Info: H A R R IS æ S E M IC O N D SECTO R bSE D • lHARRlS S E M I C O N D U C T O R 4305571 G D M ^O M l 7 3 e! « H A S 2N7277D, 2N7277R 2N7277H REGISTRATION PENDING Currently Available as FRM234 D, R, H . . Radiation Hardened N-Channel Power MOSFETs ju n « 1993

5962F0251101VXC

Abstract: 5962F0251101QEC 5962F0251101QXC IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q rt/CDFP4-F20 rt/5962F0251101VXC
Contextual Info: IS-1825ASRH TM Data Sheet February 2002 Single Event and Total Dose Hardened, High-Speed, Dual Output PWM FN9065 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH pulse width modulator is designed to be used in high

LTM4600

Contextual Info: DEMO MANUAL DC823B-A LTM4600: 20V, 10A Step-Down Power µModule Regulator DESCRIPTION Demonstration circuit DC823B-A features the LTM®4600EV, a 10A high efficiency, high density switch mode step-down power module. The input voltage is from 4.5V to 20V. The output voltage is programmable from

zener 6.3V

Abstract: 8251F cap 150uf 35v 10uF 25V LTM4603HVEV JMK432BJ107MU-T 1083A 10uf 35v 2R5TPE330M9 JMK316BJ226ML-T501
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1083A-B 6A HIGH VOLTAGE HIGH DENSITY POWER MODULE LTM4603HVEV DESCRIPTION Demonstration circuit DC1083A-B features the LTM 4603EV, the high efficiency, high density switch mode step-down power module. The input voltage

Contextual Info: DEMO MANUAL DC823B-B LTM4600HV: 28V, 10A Step-Down Power µModule Regulator DESCRIPTION Demonstration circuit DC823B-B features the LTM®4600HVEV, a 10A high efficiency, high density switch mode step-down power module. The input voltage is from 4.5V to 28V. The output voltage is programmable from

Contextual Info: NOT RECOM MENDED FO R NEW DESIG R E C O MME N NS DED REPLA CEMENT PA ISL7884XAR R T H, ISL7884X AEH Single Event Radiation Hardened High Speed, Current Mode PWM IS-1845ASRH, IS-1845ASEH Features The IS-1845ASRH, IS-1845ASEH are designed to be used in switching

Contextual Info: HARRIS SEMICON] SECTOR SfiE D • M3QEE71 DDMS772 GIT B H A S 2N7305D, 2N7305H 2N7305H HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK460 D, R, H) Radiation Hardened N-Channel Power MOSFETs Decem ber 1992 Features • 17A, 500V, RDS{on) x 0.400»

Contextual Info: HARRIS SENICOND SECTOR 30 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK260 D, R, H • 4 3 0 2 27 1 0 0 4 5 7 b 2 17G H H A S 2N7301D, 2N73U1H 2N7301H Radiation Hardened N-Channel Power MOSFETs December 1992 T & f- iS

Contextual Info: 2N7323D, 2N7323R 2N7323H H a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -100V, Tos(ON) = 0.140& TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

IRLR2905 SMD

Abstract: IRLR2905PBF 4x4 ecu 100ME100AX CR0805-8W-1000FT C0805X7R500103JNE CR0805-8W-1002FT C1206COG101 100ME100AX T MUR5120T3
Contextual Info: Using the ISL6401 RSLIC PWM Controller Evaluation Board Application Note January 30, 2009 AN1082.2 Author: Manisha Pandya, Jason Houston Functional Description The ISL6401 pulse width modulating PWM current mode controller is designed for a wide range of DC/DC conversion

IS-1845ASRH

Abstract: CDIP2-T8
Contextual Info: IS-1845ASRH TM Data Sheet November 2000 Single Event Radiation Hardened High Speed, Current Mode PWM File Number 9001 Features • Electrically Screened to DSCC SMD # 5962-01509 The IS-1845ASRH is designed to be used in switching power supplies operating in current-mode. The

k20a

Abstract: IS1825ASRH IS9-1825BSEH-Q ISL71823ASRHVX
Contextual Info: Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, ISL71823BSRH The single event and total dose hardened pulse width Features modulators are designed to be used in high frequency, switching power supplies in either voltage or current-mode

low range photo transistor

Abstract: frl9130 2E12 2N7308D 2N7308H 2N7308R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 5A, -100V, RDS(on) = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7318D 2N7318H 2N7318R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9240 D, R, H 2N7318D, 2N7318R 2N7318H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 7A, -200V, RDS(on) = 0.720Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

FRL230* harris

Abstract: 1E14 2E12 2N7275D 2N7275H 2N7275R FRL230 2N7275
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 5A, 200V, RDS(on) = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts