LT 0246 Search Results

Contextual Info: Disconnect test terminal blocks SAKT 1/LT SAKT 1/LT/35 SAKT 1/DU 1 SAKT 1/35/DU 1 Y W Maximum data Dimensions/Approvals Width/length/height mm with TS 35 x 7.5 W Insulation stripping length/clamping screw/screwdriver blade Rated data Rated voltage/rated current/rated cross-section

0244920000

Abstract: 0269320000 0299600000 0338300000 1272420000 dek 1.5 0329300000
Contextual Info: SAKT 1/DU SAKT 1/QT SAKT 4/LT SAKT 4/DU Feed Through Cross Disconnect Slide Link Feed Through 0550420000 0195620000 0105860000 0105760000 0494820000 0105820000 0269320000 0124620000 0254120000 0105720000 1272420000 0246320000 0254220000 StB left 0246420000 StB left

Contextual Info: SAKT 1/DU SAKT 1/QT SAKT 4/LT SAKT 4/DU Feed Through Cross Disconnect Slide Link Feed Through i_r 0550420000 0195620000 0105820000 C-j t _ r 0105860000 11» i_r -1— ' s'' 0105760000 0494820000 0124620000 0269320000 0105720000 0254120000 1272420000 0246320000

DO-220

Abstract: D0236 Capacitance Varactor Diode DO220 1H250 1T246 1t234 1X220 D0234 D0250
Contextual Info: r LT-3/94 EVAR EXPONENTIAL VARACTOR for 1M220 - 1H250 1T220 - 1T250 DO220 - D0250 FREQUENCY-VOLTAGE LINEAR TUNING The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide band tuning applications.

Contextual Info: Disconnect test terminal blocks SAKT 1/LT SAKT 1/DU 1 Y W Maximum values Dimensions/approvals Width/length/height mm with TS 32 Y Width/length/height (mm) with TS 35 x 7.5 W Insulation stripping length/clamping screw/screwdriver blade Rated data. VDE 0611 Part 1/8.92/IEC 60947-7-1

MRF421MP

Abstract: MRF-421MP MRF421 transistor tic 698
Contextual Info: MOTOROLA SEMICONDUCTOR MRF421 MRF421MP TECHNICAL DATA The RF Line 100 W PEP - 3 0 MHz RF POWER TRANSISTORS NPN SILIC O N NPN SILICO N RF POWER TRANSISTOR . . . designed prim arily for application as a high-power linear ampli­ fier from 2.0 to 30 MHz. Specified 1 2.5 V o lt, 30 MHz Characteristics Output Power = 100 W (PEP)

transistor et 454

Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
Contextual Info: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

Triac t460

Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Contextual Info: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •

pc574j

Abstract: sh03 5108a T108 HS 1621 UPC-574J XL08 LM 3323
Contextual Info: NEC Aà i? T /\f7 * < • 4 — B ipolar A nalog Integ rated C irc u it M PC574J V o lt a g e II M a x im u m R a t in g s T a = 2 5 fê 5e # 10 Iz mA s fi » ÜC * Pd yB ijnL Jt Topt —20—+75 °C ÿB liDL Ä Tstg —40~ °C + D i m e n s io n s (Unit : mm

c1099cx

Abstract: nec c1099 1099GS C1099G upc10 300B EH 300B P16C PC1099 IC-7763A
Contextual Info: B ipolar A n alo g In te g ra te d C irc u it ¿ 500 k H z * œ * > r ¿¿PC 1099 i , 500 0 . 2 m A ( M A X . ¿ ' J ' ê < t N » C I 9 9 - £ t z t Üh S t l ^ t . A ( M A X .) h h t z f o , V 9 ViZM W lt P > h p -;H U S & X f â i ï f f l t t n z 4 •■/ *?- > r

pj 0266 iv

Abstract: pd22100 T46C
Contextual Info: M O S jfefltlU fê M O S Integrated Circuit / ¿P D 2 2 1 0 0 4 X 4 C R O S S P O I N T S W IT C H W IT H C O N T R O L M E M O R Y c M o s ^PD22100ü 4 to 16 lin e V r = > - y t 16 bit ÿ -y f- h 4 X 4 ? t lt z T i- n ? 'X j -y f-T'tfc ê ^ 3: 161 fiOT f -d ^ X 4 -y& ¿0 |*J 11® ü ✓<-f -f ij A * £0T =? - ^ T 'ü l i f t , S T R O B E A * , D A TA IN A ^ J lz £ ^

IC-8857

Abstract: fbise t460 transistor bth 200 63445-5 UPA674T
Contextual Info: : r — — h '> > ; □ > h 7 > v x ^ PA674T Silicon Transistor N P N / P N P X fc f£ ^ V U ^ > h 7 / / P A 6 7 4 T « S jI^ - f 7 f > ^ h 7 > v X ^ ^ > y U * > 2 U ? 2 Ü IŸ F « U > V X ^ m O .: mm - Ï - m ìg iÈ D fà ± t > j:t fm m 3 x S ^ lM t c » ® u S - r o

S72 FET

Abstract: 2SK1664 rh10 261717
Contextual Info: ^ - 5> • 5/— h M o s M O S F ie ld E ffe c t P o w e r T r a n s is to r 2 S K 1664 N f^ J l//x 9 -M O S FET i i f f l V^T >ÌSÌ/L < , x ^ y f > 7 W m *lSix TU' , it jg X -i -yf- > rmu, DC — DC a >✓-?- ? C i i f t o 2SK1664 i±, N ^ * ; i 4 I S ' ' o,7 - M 0 S F E T

TC-5845

Abstract: 2SC3615 PA33 YST200
Contextual Info: - — • 5 / — s h Silicon T ra n sisto r 2SC3615 T&ìs'J n v Y^>'>7.^ NPN x i& m m n m m 4# K W m a O i H jh p E W Ì : mm) ~ C ~ Î~ o = hFE 8 0 0 — 3200 O fâ V c E s a t) @ V ce = V, Ic= 5 .0 100 m A ~ Ü "Ÿ o V c E ( s a t ) = 0 . 11 o i h j V ’e b o ' T ' Ì ’ o

j329

Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
Contextual Info: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo

pt 4115

Abstract: 5566A 2SD773 2SD77 2SB733 T108 1i03 PT10 resistance T3CS transistor b 1666
Contextual Info: SEC ' > < ; □ > h 7 , =7 9 S ilico n T r a n s is to r m ^ T tx r x 2SD773 N P N ir fc i ^ + U =l > h ^ X ^ NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier O K - 9 - 7 ' J V y i t i t , i] -t y W W ± ± itiM * h T u- S i<7 -t- ? - K 7 'f 7\

IC-8958

Abstract: uPA672T M0101 PA672T
Contextual Info: z r — • S — h * Silicon T ran s is to r PA672T JuPA672Tti, MOS F E T ^ ^ f - F * ] » - i- J U Kt ^ W tiL : mm BJLB To 0 .2 T *8 ffi 5 4 o SC-70 J ' t y ' r —i / t . M W ' C X DJ'i"jJr —v l - h 7 > y ^ i £ B~B o p.65. 1.3 .0 .6 ^ 2 .0 ± 0.2 6

LT829

Abstract: 8085A intel 8080 MCS intel 8295 8041A 8080
Contextual Info: m i e i APPLICATION NOTES AP-90 M ay 1980 An 8741 A/8041 A Digital Cassette Controller I Contents IN T R O D U C T IO N . 1 T H E C M -6 0 0 M IN I- D E K " .

K40IN

Abstract: transistor BC 945 2SJ184 2SK1398 V23040
Contextual Info: = T— S> • S / — h MOS M O S Field E ffect T ran sis to r 2 S J 1 8 4 MOS F E T F E T T~fo[ , 2 S J1 8 4 !iP f - - v Î'^ f f iÊ M O S ' i i w j M X 2 . 5 "/ V V -f- > i & 9 " W k ’ X b X W M X è 6 X L '- J 9 ; u | n | « H ; i i ( t ê i É j i l T " Ì _ o

th 2190

Abstract: 2SD1020 IC 4011 MA 7824 T460-8525 LM011 IC700 tl 7824
Contextual Info: :F — S7 • S/— S '> • ; = ] > S ilic o n h T r a n s is t o r 2SD1020 N P N x t ° ^ + '> 7 ,' ; P î ^ '> «J □ ft » > h =7 > î > 7 > 9 * m ffl, 'ÎS * Œ * t it lB S i i7 ) i — 9 K 7 -i 7 ', -?■c o f t g - f f K v 4 7 ' m W i 4.0 ± 0 . 2

r460 FET

Abstract: tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR
Contextual Info: MOS y<T7 — N MOS Field Effect P ow er Transistor FET I i f f l > YJP ^ - M O S F E T 2SK786 Ü, N T * > & & & f g < , x 4 -y f - > ¿ X T is ' , i S i f J i f c x 4 D C - D C 3 > '< - ? l z M M T t o # i t O V d s s = 900 V , Id do = 3 O fg jtX ^ 7 ? t o

2SJ197

Contextual Info: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X

ITE 8511

Abstract: MT 6235 3e tRANSISTOR transistor 3E ISK092 T108 transistor A4p 54 A04g la 5531
Contextual Info: C o m p o u n d T r a n s is to r GA1A4P ftwm mt : mm # m. 2 . 1 + 0. 1 ( R i = 10 f â , R 2= 4 7 kû) 1.25 ±0.1 )C 3 _ oG t rj N 1A 4P > 7° >J 9 y 9 >) T f ë f B T ë î t c (T a = m • a u ^ 'X ; ~ -y 9 i Hg. X fa H E E •;9Wi‘m±. ■ ^ V 9 9 % !ëÊ ( Ï Ë