LSOU Search Results

Contextual Info: T O SH IB A TENTATIVE TC75W56FU TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75W56FU DUAL COMPARATOR TC75W56FU is a CMOS type general-purpose dual comparator capable of single power supply operation and using lower supply currents than the conventional bipolar

Contextual Info: T O SH IB A TC75S54F TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75S54F SINGLE OPERATIONAL AMPLIFIER TC75S54F is a CMOS operational amplifier with low supply voltage, low supply current. FEATURES • Low supply voltage VDD = ±0.9~3.5V or 1.8-7 V

Contextual Info: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I DESCRIPTION ICompany name changed RATED CAP DIMENSIONS ※ L ※T ※H ※d F VOLTAGE ECQE1A8230 B6 125VAC O . 082 1O .3 4 .6 O .6 7 .5 1 1 1 1 1 1 1 lAl040B6 O .1 5 .1 7 .7 1 1 I f 1 1 lA1240B6

RF1K49093

Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Contextual Info: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

AM79C433

Abstract: MX1L
Contextual Info: K Jiä / U ^ U S e m i c o n d u c t o r s 900-MHz ISM Band Receiver Description The receiver IC U2762B-B is specifically designed for cordless telephone applications in the 900-MHz ISM band. It is manufactured using TEMIC’s advanced UHF process. The IC consists of a 900-MHz RF amplifier and

d425

Contextual Info: M-985-01 Precise Call Progress and Special Infomiation Tone Detector • Precise detection of call progress tones • Linear analog input • Digital (CMOS compatible), tri-state outputs • 22-pin DIP and 20-pin SOIC • Single supply 3 to 5 volt (low power CMOS)

32H6825

Abstract: l 7251 3.1 pwm 3phase power supply LT opamp
Contextual Info: SSI 32H6825 Servo and Spindle Predriver ¿ m m s y s k m s A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The Servo and Spindle Predriver SSP is designed to drive a 3-phase hall-sensorless motor and a voice coil actuator with external M O S power devices.

MSC dz diode

Abstract: 32H6231
Contextual Info: SSI 32H6825A ¿imnsiisbns Servo and Spindle Predriver A TDK Group/Company Advance Inform ation April 1994 DESCRIPTION FEATURES Spindle driver is PWM during run and start The SSI 32H6825A Servo and Spindle Predriver SSP is designed to drive a 3-phase hall-sensorless motor

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge

ic s surround SONY

Abstract: 5.1 surround sound amplifier circuits CXA2054S
Contextual Info: SONY CXA2054S US Audio Multiplexing Decoder Description The CXA2054S is an 1C designed as a decoder for the Z e n ith T V M u lti-c h a n n e l S ys te m and a lso corresponds with l2C BUS. Functions include stereo d e m o d u la tio n , SAP S e p a ra te A u d io P ro g ra m

intel embedded microcontroller handbook

Abstract: RG-11/U COM20020 COM20020D CQM20020 RG62 COM20020B
Contextual Info: COM20020D PRELIMINARY STANDARD MICROSYSTEMS CORPORATION COM20020 ULANC Revision D Universal Local Area Network Controller with 2K X 8 On-Board RAM FEATURES • • • • • • • • • • • New Features for Rev. D • Data Rates up to 5 Mbps Programmable Reconfiguration Times

intel embedded microcontroller handbook

Abstract: 75176B COM20020 RG62
Contextual Info: COM20020 Rev. D SltlgC ADVANCE INFORMATION STANDARD MICROSYSTEMS CORPORATION COM20020 ULANC Revision D Universal Local Area Network Controller with 2K X 8 On-Board RAM FEATURES • • • • • • • • • • • New Features for Rev. D • Data Rates up to 5 Mbps

Contextual Info: LM49151 www.ti.com SNAS482D – MARCH 2009 – REVISED MAY 2010 LM49151 PRODUCT BRIEF Mono Class D Audio Subsystem with Earpiece Driver, Ground Referenced Headphone Amplifiers, Speaker Protection and No Clip with Clip Control Check for Samples: LM49151 FEATURES

Contextual Info: Technical Datasheet CPT15F18 Cool Power Technologies Sixteenth-Brick Isolated DC/DC Converter Features • • • • • • • • • • • • • • • • • Ultra-wide input voltage range: 9 – 36Vin Output: 3.3 V at 15 A, 50W max. ROHS Directive 2002/95/EC Compliant

SG3526AN

Abstract: SG1526AJ SG3526A 1526a SG2526A SG3526 SG1526 SG1526A SG2526AJ SG3526AJ
Contextual Info: „ „„„ SlLlCOn GßnßPSL ADVANCED DATA SG1526A/SG2528A/SG3526A D. LIN EAR IN T E G R A , I D C .R C U .T S REGULATING PULSE W ID T H M O D U L A T O R DESCRIPTION FEATURES The SG1526A high performance pulse width modulator PWM cir­ cuit is a direct replacement for the SG1526 in all applications and

IRL2203NS

Abstract: 30BQ015 C17-C19 SC1154 SC1154CSW
Contextual Info: SEMTECH A/'sVision PROGRAMMABLE SYNCHRONOUS DC/DC HYSTERETIC CONTROLLER FOR ADVANCED PROCESSORS P re lim in a ry - O cto b er 7, 1998 SC1154 T E L :8 0 5 -4 9 8 -2 1 11 FA X :805-498-3804 W E B :http://w w w .sem tech.com D E S C R IP TIO N FE A T U R E S

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

L100

Abstract: SR-332 YEV09T10
Contextual Info: YEV09T10 10A DC-DC POL Converter 4.5V to 13.8V Input • 0.59V to 5.1V Output Data Sheet Member of the Applications  Low voltage, high density systems with Intermediate Bus Architectures IBA  Point-of-load regulators for high performance DSP, FPGA, ASIC, and microprocessors

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

75631P

Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Contextual Info: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

AN7254

Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Contextual Info: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives

7n10l

Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes

76639p

Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Contextual Info: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic