LS 820 AUDIO AMP Search Results

Contextual Info: September 2006 LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier General Description Key Specifications The LM4949 is a fully integrated audio subsystem designed for stereo cell phone applications. The LM4949 combines a 2.5W stereo Class D amplifier plus a separate 190mW stereo headphone amplifier, volume control, and input mixer

scl 1058 by national

Abstract: smd marking e5 rf LM4949 LM4949TL LS-298 FORMS
Contextual Info: LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier General Description Key Specifications The LM4949 is a fully integrated audio subsystem designed for stereo cell phone applications. The LM4949 combines a 2.5W stereo Class D amplifier plus a separate 190mW stereo

LS-298 FORMS

Abstract: smd marking e5 rf LM4949 LM4949TL DB 646
Contextual Info: LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier General Description Key Specifications The LM4949 is a fully integrated audio subsystem designed for stereo cell phone applications. The LM4949 combines a 2.5W stereo Class D amplifier plus a separate 190mW stereo headphone amplifier, volume control, and input mixer

Contextual Info: LM 4949 LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier Te x a s In s t r u m e n t s Literature Number: SNAS368C tt Sem iconductor LM4949 ^Boomer Audio Power Am plifier Series Stereo Class D Audio Subsystem with OCL Headphone Am plifier

CA3013

Contextual Info: R a d io /C o m m u n ic a tio n C ir c u it s _ CA3013, CA3014 Wide-Band Amplifier Discriminators Features & Applications: • Exceptionally high gain: power gain at 4.5 MHz - 75 dB typ. m Excellent limiting characteristics input limiting voltage knee

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

IRHNA7260

Abstract: IRHNA8260 smd 43a
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1397 IRHNA7260 IRHNA8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.070Ω International Rectifier’s RAD HARD technology

Contextual Info: HD44237P, HD44238P Single Chip CODEC with Filters COMBO Features • • Single Chip CMOS CODEC with Filter in 16-pins DIL Package Power Supply Voltage ± 5 V ± 5%, Low Power Dissipation (50 mW typ) • Follows A-Law (HD44237P)/|i-law(HD44238P) • - Exceeds CCITT and D4 Specifications

irf740 spice model

Abstract: IRF740
Contextual Info: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package

Contextual Info: International \IQR}Rectifier Provisional Datasheet No. PD-9.1397 REPETITIVE AVALANCHE AND dv/dt RATED IR H N A7260 IR H N A 8260 HEXFET T R A N S IS T O R N-CHANNEL MEGA RAD HARD 200 Volt, 0.070Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology

Contextual Info: International S R ectffier Preliminary Data Sheet No. PD-9.1332 IRHM7260 IRHM8260 REPETITIVE AVALANCHE ANO dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 200Volt, 0.070ft, MEGA RAD HARD HEXFET International Rectifier’s RAD H ARD technology

IRHE7110

Abstract: IRHE7130 IRHE8110 IRHE8130
Contextual Info: PD - 90732B IRHE7110 IRHE8110 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 100Volt, 0.60Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

2N7269U

Abstract: IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U
Contextual Info: PD - 90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.100Ω Ω, MEGA RAD Hard REF:MIL-PRF-19500/603 N CHANNEL MEGA RAD HardTM TM HEXFET® Inter national Rectifier’s RAD Hard technology

LS 820 audio amp

Contextual Info: _• »3aa3»3 o o i i m i id t SONY. 2 / C X 3 7 A ■ _ C X A 1 2 3 7 A R Audio Signal Processing for VTR Description CX20037A/CXA1237AR is a bipolar IC which has been developed for the processing of VTR audio signals,

uA783

Abstract: A783P4 A783 783p
Contextual Info: ¿¿A783 9 WATT AUDIO POWER AMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUIT G E N E R A L D E S C R I P T I O N — T h e /j A 783 is h ig h - v o lta g e m o n o lith ic in te g r a te d c ir c u it in a 1 2 -p in p o w e r p a c k a g e . It is c o n s tr u c te d u s in g th e F a ir c h ild P la n a r* e p ita x ia l

2N7269

Abstract: delta rectifier all model 100S IRHM7250 IRHM8250 h229 h237
Contextual Info: Data Sheet No. PD-9.674A INTERNATIONAL RECTIFIER l i “ Rl REPETITIVE AVALANCHE AND dv/dt RATED H E X FE f TRANSISTORS IRHM7S50 IRHM8250 SN7269 JANSRSN7S69 JANSHSN7S69 N-CHANNEL _MEGA RAD HARD 200 Volt, 0.100Q, MEGA RAD HARD HEXFET Product Summary

eurocom

Abstract: FX619 FX619M1 BS9450 FX619J FX619L1 FX619L2 stanag stanag 4380
Contextual Info: CML Semiconductor Products PRODUCT INFORMATION FX619 'Eurocom' Delta Codec Publication D/619/6 September 1997 Features/Applications On-Chip Input and Output Filters Designed to Meet Eurocom D1-IA8f Meets Stanag 4209 and Stanag 4380 Military Communications

Contextual Info: FQB47P06 P-Channel QFET MOSFET -60 V, -47 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: FQPF85N06 N-Channel QFET MOSFET 60 V, 53 A, 10 mΩ Description Features • 53 A, 60 V, RDS on = 10 mΩ (Max.) @ VGS = 10 V, ID = 30 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced

V145M

Abstract: 2N7269 IRHM7250 IRHM8250 h234 o8e transformer CLA20 S60CL
Contextual Info: Data Sheet No. PD-9.674A llO R l INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7250 IRHM8S5Q 2N 7269 JANSRSN7S69 JAN5HSN7S69 N-CHANNEL _ MEGA RAD HARD 200 Volt, 0.100Q, MEGA RAD HARD HEXFET Product Summary

IRHM7260

Abstract: IRHM8260
Contextual Info: PD - 91332C IRHM7260 IRHM8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

eurocom

Abstract: stanag 4380 eurocom d/1 BS9450 FX619J FX619M1 stanag FX619 FX619L1 FX619L2
Contextual Info: CML Semiconductor Products PRODUCT INFORMATION FX619 'Eurocom' Delta Codec Publication D/619/6 September 1997 Features/Applications On-Chip Input and Output Filters Designed to Meet Eurocom D1-IA8f Meets Stanag 4209 and Stanag 4380 Military Communications

Contextual Info: Data Sheet No. PD-9.697A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7250 IRH8250 N-CHANNEL MEGA RAD HARD 200 Volt, 0.1012, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown