LS 7400 N Search Results

Contextual Info: R o h r k a b e ls c h u h e K u rz e Cable lugs V e r s io n S h o r t v e rs io n Artikel-Nummer Leiter- Bolzen Abmessungen mm Verp.-Einh. Stud Dimensions mm Standard querschnitt Part number Wire size Stuck packing mm2 M d2 d3 L P S 1 a d1 r s Piece RSQ 7400 A 3.5 - 2

internal structure 74LS00 nand gate

Abstract: Multivibrator 7400 examples 93831A 7400 fan-out RS-481-A 74lsxxx 74LS00 gate IC TTL 7400 quiescent power IC 7400 truth table TTL 7400 propagation delay
Contextual Info: GENERAL INFORMATION TTL in Perspective performance. We therefore recommend the VHC, High Speed and FACT products for all new 5.0 Volt designs. Further improvements in power reduction can be achieved using the LVX, LCX or VCX running at 3.3 Volts. Improvements in electrostatic discharge susceptibility in

Contextual Info: • r A d van c ed W :Æ P ow er jàÊM Tec h n o lo g y APT501OLVR soov 47a 0.1ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

ls 7400

Contextual Info: APT8028JVR A dvanced P o w er Te c h n o l o g y ' 800V 28A 0.280Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

irf 540 mosfet

Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

ALU IC 74181

Abstract: ALU IC 74181 FUNCTION TABLE IC 74181 BTS18 ALU IC 74181 circuit IC 74181 alu 8 bit barrel shifter 7400 fan-out IC 7400 truth table IC 7400 nand gate
Contextual Info: 7- c o r p o r a t io n c . _ Silicon-Gate L L 5 0 0 0 S e r ie s Loaic Arrays O u ^ •J00941 C -S L- r , General The LL5000 series of silicon-gate HCMOS logic arrays from LSI LOGIC CORPORATION exhibits bipolar speeds, while at the same time, offers low power

irfp064 driver circuit

Abstract: IRFP064 IRFP064 APPLICATION ls 7400 SiHFP064
Contextual Info: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

Z-35Q

Abstract: mh 7400
Contextual Info: Data Sheet No. PD-9.876 INTERNATIONAL RECTIFIER IOR AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR ji IRFIQ64 N-CHANNEL Product Summary 60 Volt, 0.017 Ohm HEXFET The HEXFET® technology is the key to International Part Number Rectifier’s advanced line of power M O SFE T transistors.

Contextual Info: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: 175BGQ030 Vishay High Power Products Schottky Rectifier, 175 A FEATURES Cathode • • • • • 150 °C TJ operation High frequency operation Ultralow forward voltage drop RoHS COMPLIANT Continuous high current operation Guard ring for enhanced ruggedness and long term

Contextual Info: VS-175BGQ030 Vishay Semiconductors Schottky Rectifier, 175 A FEATURES Cathode • Ultralow forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • 150 °C TJ operation • Continuous high current operation

hc 7400

Contextual Info: htemational \tq r ]Rectifier Provisional Data Sheet No. PD-9.1416 IRHNA7064 IRHNA8064 R E P E T IT IV E A V A L A N C H E AN D dv/dt R A T E D HEXFET*TRANSISTOR N -C H A N N E L M EG A RAD HARD 60 Volt, 0.0150, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology

Contextual Info: Provisional Data Sheet No. PD-9.1438A International IGR Rectifier dv/dt RATED H E X F E T T R A N S IS T O R IR H M 9 0 6 4 R EPE TITIV E AVALANCHE A N D P -C H A N N E L RAD HARD -60 Volt, 0.060ft, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

IRHNA9064

Abstract: CE SMD
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1447 IRHNA9064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RADHARD -60Volt, 0.055Ω 0.055Ω, RAD HARD HEXFET Product Summary International Rectifier’s P-Channel RAD HARD technology

TTL LS 7400

Abstract: 74 LS 00 Logic Gates Advanced Schottky Family 4 bit barrel shifter LS 00 Logic Gates ls 7400 7400 ls 74lsxxx TTL 7400 LS TTL family characteristics
Contextual Info: Selection Information FAST/LS TTL FAST AND LS TTL 1 GENERAL INFORMATION TTL in Perspective FAST is manufactured on Motorola’s MOSAIC oxideisolated process.This process provides FAST with inherent speed/power advantages over the older junction-isolated 74S

6fh8

Abstract: tube 6fh8 I0220 tetrode type 45 triode
Contextual Info: 6FH 8 MEDIUM-MU TRIODE— THREE-PLATE TETRODE 9-PIN MlNIATURE TYPE For harw onic-senerator a p p lica tio n s G E N E R A L DATA Electrical: Heater, f o r U n i p o t e n t i a l Cathode: V o l t a g e AC o r D C ] . C u r r e n t .

MC7472

Abstract: MC7472F MC5472 MC5472F sama logic
Contextual Info: M T T L M C 5400F /7400 F series J -K F L I P - F L O P f MC5472F* MC7472F* T h is negative-edge-clocked J - K flip -flo p ope rate s o n th e m aster-slave principle. T h re e K in p u t s are A N D ed together, and three J in p u t s are A N O e d together. S E T a n d R E S E T in p u t s are also available. T h e device

U6N93L1159X

Abstract: tallow
Contextual Info: Am93L11 Low-Power One-of-Sixteen Decoder •1ÿ ilinctive Characteristics: 56 mw typical power dissipation. 100% reliability assurance testing in compliance with MIL STD 883. »0 ns typical propagation delay. Compatible with 7400 and 9300 series devices LOGIC DIAGRAM

D1N6098

Contextual Info: RMPA39200 37–40 GHz 1.6 Watt Power Amplifier MMIC General Description Features The Fairchild Semiconductor’s RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3-stage

74LS08 fan-in

Abstract: 74LS398 74LS273 74LS14 Hex Inverter definition MC74F579 74LS181 74ls795 74LS299 Decade Up/Down counter 3 State ttl buffer 74LS245
Contextual Info: Selection Information FAST/LS TTL 1 Circuit Characteristics 2 Design Considerations, Testing and Applications Assistance Form 3 FAST Data Sheets 4 LS Data Sheets 5 Reliability Data 6 Package Information Including Surface Mount 7 FAST AND LS TTL DATA CLASSIFICATION

030p

Abstract: 40HF IRKCS220
Contextual Info: Bulletin I27255 09/06 IRKCS220/030P SCHOTTKY RECTIFIER 220 Amp Description/ Features 1 The IRKCS220. Schottky rectifier doubler module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. Typical

c 2274

Contextual Info: Bulletin PD-2.274 rev. B 03/01 122NQ030 R 120 Amp SCHOTTKY RECTIFIER D-67 Description/Features Major Ratings and Characteristics Characteristics 122NQ030(R) Units IF(AV) Rectangular 120 A VRRM 30 V 22,500 A 0.41 V - 55 to 150 °C waveform IFSM @ tp = 5 µs sine

RMPA19000

Abstract: LM2941T
Contextual Info: RMPA19000 18–22 GHz Power Amplifier MMIC General Description Features The Fairchild Semiconductor RMPA19000 is a high efficiency driver amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA19000 is a 3-stage GaAs