LS 7400 N Search Results

Contextual Info: R o h r k a b e ls c h u h e K u rz e Cable lugs V e r s io n S h o r t v e rs io n Artikel-Nummer Leiter- Bolzen Abmessungen mm Verp.-Einh. Stud Dimensions mm Standard querschnitt Part number Wire size Stuck packing mm2 M d2 d3 L P S 1 a d1 r s Piece RSQ 7400 A 3.5 - 2

rs flip-flop IC 7400

Abstract: 74ls105 TTL LS 7400 74LS series logic gates 7400 fan-out 74LS 3 input AND gate IC TTL 7400 schematic 74LS04 fan-out 74ls series logic family 90 watts inverter by 12v dc with 6 transisters
Contextual Info: GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ovar operating free-air temper­ ature range unless otherwise noted Supply Voltage Vq c (See Note 1) Input Voltage V|n (See Note 1) Interemitter Voltage (See Note 2) Resistor Node Voltage, 54121, 74121 (See Note 1)

7400 signetics

Abstract: 74LS00 7400 74S00 74LS00 function table 7400 pin configuration N7400N TTL 7400 propagation delay 74LS00 DATA TTL 7400 7400 signetics TTL 74LS00
Contextual Info: Signetics I 7400, LS00, S00 Gates Quad Two-Input NAND Gate Product Specification Logic Products TYPE TY PIC A L PR O PAG ATIO N D ELAY 7400 74LS00 74S00 TY P IC A L S U P P LY C U R R E N T TO TAL 9ns 8m A 9.5 n s 1.6m A 3n s 15m A ORDERING CODE C O M M ER C IA L R A N G E

IC 7410

Abstract: 7410 JRC IC 7430 IC 7420 IC 7400 nand OF IC 7410 7410 ic ls 7400 hc 7400 7410 1c
Contextual Info: - 25- Triple 3 Input NAND 7410 Vcc 1C IV ac 38 3A 3Y ninininiLriiniriif ft IB 2A 2B 2C 2Y GND O Y = A •B •C 74S10 N LS ALS ALSK F S AS AC max L-*H T 22 15 11 8 6 4.5 4.5 11.1 12. 3,24 30 ns tpd max H—»L 1 15 15 10 7 5. 3 5 4.5 11.1 12.3 24 30 ins IN

ls 7400

Abstract: 7400 ls 74LS00 CI 7400 74H00 CT7400 CT5400 CT54 a 741 j ITT 7400
Contextual Info: C T 5 4 /7 4 ,C T 5 1 /7 4 H , € 1 5 4 /7 4 8 ,0 1 5 4 /7 4 1 .8 P3 2 i l A ^ 1 h l C T 5 4 0 0 /C T 7 4 0 0 C T54SO O /C T 74SO O C T 5 4 H 0 0 /C T 7 4 H 00 C T 54LSO O /C T74LSO O ili 2 na V5) (JÌ (10) m n o t i ? « > , # # 5 4 . 7 4 00, W '74H 0 0 . 54 .' 74X00, fa54 74 t-S(H)K «•«*«&!$$

ls 7400

Abstract: ls 7404 7410 JRC HC 7404 hc 7400 7404 ls TTL 7404 7400 hc 7404 74LS04 NOT gate
Contextual Info: 7404 - 19- Hex Inverters 74LS04 « 0 * tpd max tpd A ?] IN 74S04 Util OH N LS ALS ALSK F S AS AC ACT HC HCU HCT L-»H t 22 15 11 7 4. 5 5 5 .9 8 .5 23 19 24 23 19 24 1 max 6 8 .5 8 6 5 .3 5 4 5 .9 2 .4 1.1 3 4 .2 24 4.8 0 .0 4 0 .0 4 0 .0 2 0.02 0.0 2 oA

earom

Abstract: CI 2811 7400 TTL ITT 7400 TTL 7400 rise and fall time
Contextual Info: I Preliminary Data Sheet N C R 8192-BIT EAROM MEMORY 2811 NCR CORPORATION M ICRO ELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG , OHIO 45342 I (513) 866-7471 T LX 28-8010 NCRM ICRO , MSBG Electrically alterable ROM MNOS P-channel technology S T A N D A R D 2 4 P IN S ID E B R A Z E D IP

internal structure 74LS00 nand gate

Abstract: Multivibrator 7400 examples 93831A 7400 fan-out RS-481-A 74lsxxx 74LS00 gate IC TTL 7400 quiescent power IC 7400 truth table TTL 7400 propagation delay
Contextual Info: GENERAL INFORMATION TTL in Perspective performance. We therefore recommend the VHC, High Speed and FACT products for all new 5.0 Volt designs. Further improvements in power reduction can be achieved using the LVX, LCX or VCX running at 3.3 Volts. Improvements in electrostatic discharge susceptibility in

Contextual Info: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

sm 126 ao 570

Contextual Info: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • r A d van c ed W :Æ P ow er jàÊM Tec h n o lo g y APT501OLVR soov 47a 0.1ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT5010

Contextual Info: • R W 'æ APT501OJVR A dvanced pow er Te c h n o l o g y ' soov 44a o .i o o q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TTL SN 54S00

Contextual Info: SN5400, SN54LS00, SIU54S00, SN7400, SN74LS00, SN74S00 QUADRUPLE 2 INPUT POSITIVE NAND GATES D E C E M B E R 1 9 8 3 - R E V IS E D M A R C H 1 988 Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic

Contextual Info: • R A dvanced W .\A APT5010B2VR pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V‘ P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT5012WVR 500v 40a 0.120Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

ls 7400 n

Contextual Info: APT5010B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: • R A dvanced W .\A APT5010JVFR pow er Te c h n o lo g y " 500v POWER MOS V 44a 0.1 o o q FREDFET P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect,

Contextual Info: New Product VS-175BGQ030HF4 www.vishay.com Vishay Semiconductors Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode • Ultralow forward voltage drop • Continuous high current operation

25C5250

Contextual Info: • R A dvanced W .\A APT501OLVFR pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TTL 7400

Abstract: 7400 TTL earom TTL 7400 data sheet D9 DG transistor VSS28
Contextual Info: I Preliminary Data Sheet 2811 8192-BIT EAROM MEMORY NCR CORPORATION M ICRO ELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG , OHIO 45342 I (513) 866-7471 TLX 28-8010 NCRM ICRO, MSBG Electrically alterable ROM MNOS P-channel technology S T A N D A R D 2 4 PIN S ID E B R A Z E D IP

irf 540 mosfet

Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: International lo g Rectifier HEXFET Power MOSFET • • • • • • • 4855452 PD-9.754 Q 01S454 318 H I N R IRFP064 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.