LS 7400 N Search Results

rs flip-flop IC 7400

Abstract: 74ls105 TTL LS 7400 74LS series logic gates 7400 fan-out 74LS 3 input AND gate IC TTL 7400 schematic 74LS04 fan-out 74ls series logic family 90 watts inverter by 12v dc with 6 transisters
Contextual Info: GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ovar operating free-air temper­ ature range unless otherwise noted Supply Voltage Vq c (See Note 1) Input Voltage V|n (See Note 1) Interemitter Voltage (See Note 2) Resistor Node Voltage, 54121, 74121 (See Note 1)

IC 7410

Abstract: 7410 JRC IC 7430 IC 7420 IC 7400 nand OF IC 7410 7410 ic ls 7400 hc 7400 7410 1c
Contextual Info: - 25- Triple 3 Input NAND 7410 Vcc 1C IV ac 38 3A 3Y ninininiLriiniriif ft IB 2A 2B 2C 2Y GND O Y = A •B •C 74S10 N LS ALS ALSK F S AS AC max L-*H T 22 15 11 8 6 4.5 4.5 11.1 12. 3,24 30 ns tpd max H—»L 1 15 15 10 7 5. 3 5 4.5 11.1 12.3 24 30 ins IN

ls 7400

Abstract: 7400 ls 74LS00 CI 7400 74H00 CT7400 CT5400 CT54 a 741 j ITT 7400
Contextual Info: C T 5 4 /7 4 ,C T 5 1 /7 4 H , € 1 5 4 /7 4 8 ,0 1 5 4 /7 4 1 .8 P3 2 i l A ^ 1 h l C T 5 4 0 0 /C T 7 4 0 0 C T54SO O /C T 74SO O C T 5 4 H 0 0 /C T 7 4 H 00 C T 54LSO O /C T74LSO O ili 2 na V5) (JÌ (10) m n o t i ? « > , # # 5 4 . 7 4 00, W '74H 0 0 . 54 .' 74X00, fa54 74 t-S(H)K «•«*«&!$$

ls 7400

Abstract: ls 7404 7410 JRC HC 7404 hc 7400 7404 ls TTL 7404 7400 hc 7404 74LS04 NOT gate
Contextual Info: 7404 - 19- Hex Inverters 74LS04 « 0 * tpd max tpd A ?] IN 74S04 Util OH N LS ALS ALSK F S AS AC ACT HC HCU HCT L-»H t 22 15 11 7 4. 5 5 5 .9 8 .5 23 19 24 23 19 24 1 max 6 8 .5 8 6 5 .3 5 4 5 .9 2 .4 1.1 3 4 .2 24 4.8 0 .0 4 0 .0 4 0 .0 2 0.02 0.0 2 oA

Contextual Info: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

sm 126 ao 570

Contextual Info: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • r A d van c ed W :Æ P ow er jàÊM Tec h n o lo g y APT501OLVR soov 47a 0.1ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT5010

Contextual Info: • R W 'æ APT501OJVR A dvanced pow er Te c h n o l o g y ' soov 44a o .i o o q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TTL SN 54S00

Contextual Info: SN5400, SN54LS00, SIU54S00, SN7400, SN74LS00, SN74S00 QUADRUPLE 2 INPUT POSITIVE NAND GATES D E C E M B E R 1 9 8 3 - R E V IS E D M A R C H 1 988 Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic

Contextual Info: • R A dvanced W .\A APT5010B2VR pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V‘ P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

CCO-40

Abstract: APT5010LVR 250DS
Contextual Info: APT501OLVR • R A dvanced W .\A pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT5012WVR 500v 40a 0.120Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

ls 7400 n

Contextual Info: APT5010B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: New Product VS-175BGQ030HF4 www.vishay.com Vishay Semiconductors Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode • Ultralow forward voltage drop • Continuous high current operation

25C5250

Contextual Info: • R A dvanced W .\A APT501OLVFR pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

TTL 7400

Abstract: 7400 TTL earom TTL 7400 data sheet D9 DG transistor VSS28
Contextual Info: I Preliminary Data Sheet 2811 8192-BIT EAROM MEMORY NCR CORPORATION M ICRO ELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG , OHIO 45342 I (513) 866-7471 TLX 28-8010 NCRM ICRO, MSBG Electrically alterable ROM MNOS P-channel technology S T A N D A R D 2 4 PIN S ID E B R A Z E D IP

irf 540 mosfet

Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: International lo g Rectifier HEXFET Power MOSFET • • • • • • • 4855452 PD-9.754 Q 01S454 318 H I N R IRFP064 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

AN541

Abstract: AN5416 AN5415
Contextual Info: T b tr ^ ic A N 5 4 1 ti? — x AN5415. AN5416 5 , A N 5 4 U 1 6 /C o lo r T V D eflectio n C ircu its • « * AN5415. AN54I6 ¡ t * 9 - T u » m i: » f l­ in t ■ n m • k B a tttH W H » * -.-, i n fc S in y » !r » H * • * « * £ * » . Aft r >1vYtzMiX'&iLnmm.

ALU IC 74181

Abstract: ALU IC 74181 FUNCTION TABLE IC 74181 BTS18 ALU IC 74181 circuit IC 74181 alu 8 bit barrel shifter 7400 fan-out IC 7400 truth table IC 7400 nand gate
Contextual Info: 7- c o r p o r a t io n c . _ Silicon-Gate L L 5 0 0 0 S e r ie s Loaic Arrays O u ^ •J00941 C -S L- r , General The LL5000 series of silicon-gate HCMOS logic arrays from LSI LOGIC CORPORATION exhibits bipolar speeds, while at the same time, offers low power

irfp064 driver circuit

Abstract: IRFP064 IRFP064 APPLICATION ls 7400 SiHFP064
Contextual Info: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

irfp064 driver circuit

Abstract: IRFP064 IRFP064 APPLICATION
Contextual Info: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated