LRCS Search Results

Contextual Info: Low Value Current Sense Surface Mount Chip Resistor LRCS / LVC Series • 0402, 0603 and 0805 sizes larger sizes refer to our LRF Series Resistance R020 (20mΩ) to 1R0 (1000mΩ) Designed for current sensing in power electronic systems RoHS compliant ·

1450F

Abstract: 08F-12T1189N-LRCST 6URD33TTF1000
Contextual Info: B6C A(B6C) - Schaltung mit Sicherung (B6C)A(B6C) - Circuit with fuse verst. Luftkühlung T A = 35°C forced air cooling T A = 35°C Click on Outline No. for download Typenbezeichnung (B6C)A(B6C) 230/310 - 650F - K0.17F-12T298N-LRCST (B6C)A(B6C) 230/310 - 740F - K0.17F-12T378N-LRCST

LRCS

Abstract: w1c datasheet 980F 1130f 08F-2T1509N-LRCST
Contextual Info: W1C - Schaltung mit Sicherung W1C - Circuit with fuse verst. Luftkühlung T A = 35°C forced air cooling T A =35°C Click on Outline No. for download Typenbezeichnung Part No. ZweigSicherung arm-fuse Typenstrom [A] ohne Sicherung Typecurrent [A] Maßbild W1C 230 - 890F - K0.08F-2T589N-LRCST

tt104n14kof

Abstract: TT104N16KOF TT104N08KOF TT162N14KOF B6C 500/670 1260F K0.17F-6T878N-LRCT TT61N08KOF TT162N14-KOF
Contextual Info: B6C - Schaltung Luftselbstkühlung TA = 45 °C mit Strangsicherungen verstärkte Luftkühlung TA = 35 °C click on MB to select outline Typenbezeichnung SAP Bauelement KK Sicherung B6C 230/310 - 85S - KM33-3TT61N-RCS B6C 230/310 - 110S - KM33-3TT104N-RCS B6C 230/310 - 180F - KM14-3TT104N-LRCST

marking R50

Abstract: R50 marking marking code r10 202F 208H LRCS0402 LRCS0603 LRCS0805 R020 R051
Contextual Info: Small Size Low Value Current Sense Surface Mount Chip Resistors LRCS Series 0402, 0603 and 0805 sizes larger sizes refer to our LRF Series Resistance R020 (20m ) to 1R0 (1000m ) Designed for current sensing in power electronic systems RoHS compliant Electrical Data

Contextual Info: Low Value Current Sense Surface Mount Chip Resistor LRCS / LVC Series • 0402, 0603 and 0805 sizes larger sizes refer to our LRF Series Resistance R020 (20mΩ) to 1R0 (1000mΩ) Designed for current sensing in power electronic systems RoHS compliant ·

Contextual Info: Resistors Make Possible Low Value Current Sense Surface Mount Chip Resistor LRCS / LVC Series 0402, 0603 and 0805 sizes larger sizes refer to our LRF Series Resistance R020 (20mΩ) to 1R0 (1000mΩ) Designed for current sensing in power electronic systems

A9RV

Abstract: 5s a315 A327
Contextual Info: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

TC528257

Abstract: n724
Contextual Info: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The

tc5118180

Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Contextual Info: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit

tc5117400f

Abstract: TC5117400J
Contextual Info: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

Contextual Info: I Ordering number : EN%5085 _ CMOS LSI LC322271J, M-8Ò 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC322271J, M is a CMOS dynamic RAM operating on a single 5 V power source and having a 131072 words

UAC33092A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UAC33092A LINEAR INTEGRATED CIRCUIT ALTERNATOR VOLTAGE REGULATOR „ DESCRIPTION The UTC UAC33092A is designed for Load Response Control and voltage regulation of diode rectified alternator charging systems for automotive applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UAC3092A LINEAR INTEGRATED CIRCUIT ALTERNATOR VOLTAGE REGULATOR DESCRIPTION The UTC UAC3092A is designed for Load Response Control and voltage regulation of diode rectified alternator charging systems for automotive applications.

Contextual Info: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O

toshiba 7 pin a215

Abstract: A227
Contextual Info: TOSHIBA TC514800AJL/AFTL70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

sr64kb

Abstract: SR64K8-40 SR64K8-45 SR64K8-55 lattice 1996
Contextual Info: J - .fl 11 l a t HIGH-SPEED 64K STATIC RAM 8k XÖ FUNCTIONAL BLOCK DIAGRAM FEATURES a • FULLY STATIC — No Clocks Required 3— A ,— • v Cc As— - GND A 6— • FAST ACCESS TIME = CYCLE TIME — — — — SR64K8-35: SR64K8-40: SR64K8-45: SR64K8-55:

memory samsung

Contextual Info: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

Contextual Info: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e

AO117

Abstract: 1DM6 LC33832M LC33832P LC33832S LC33832
Contextual Info: Ordering number : EN4430B CMOS LSI _ LC33832P, S, M, PL, SL, ML-70/80/10 SA\YO 256 K 32768 words x 8 bits Pseudo-SRAM ''X Overview Package Dimensions The LC33832 scries is com posed o f pseudo static RAM that o p e ra te s on a s in g le 5 V p o w e r su p p ly an d is

83977ATF

Abstract: winbond msl 83977TF marking rld bh sot 223 st ae gp 446
Contextual Info: W83977ATF WINBOND I/O W83977ATF Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 08/25/97 0.50 First published. 2 53,54,58,63,64,65, 69,138.1,139 11/17/97 0.51 Register correction 3 1,2,3,20,45,53,63, 65,99,103,150 04/01/98

MACH5LV

Contextual Info: ADVANCE INFORMATION COM'L: -5/7/10/12 IND: -7/10/12/15 MACH5LV-256 V A N A N A M D T I S C O M P A N Y M A C H 5LV -256/68-5/7/10 /1 2 M ACH5LV-256/12 0 -5 /7 /1 0 /1 2 M ACHSLV-256/104-5/7 /1 0 /1 2 MACH5LV-2 56/16 0 -5 /7 /1 0 /1 2 Fifth Generation MACH Architecture

mosfet ignition coil

Abstract: mosfet alternator motorola automotive transistor coil ignition BSP52T1 MC33092 MC33092DW MR850 MTB36N06E RPM SHIFT LIGHT alternator ic connection
Contextual Info: Order this document by MC33092/D MC33092 Alternator Voltage Regulator The MC33092 is specifically designed for voltage regulation and Load Response Control LRC of diode rectified alternator charging systems, as commonly found in automotive applications. The MC33092 provides load

Contextual Info: FUJITSU March 1992 Edition 1.0 DATA SHEET M B 8 1 4 1 O O A -6 0 /-7 0 /-8 0 CMOS 4M x 1 BIT FAST PAGE MODE DRAM CMOS 4,194,304 x 1 BIT FAST PAGE MODE DYNAMIC RAM The Fujitsu MB814100A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,804 memory cells in a x1 configuration. The MB814100A features a “fast