LOW-FREQUENCY LOW-NOISE PNP TRANSISTOR Search Results

2SA847

Abstract: 2SA847A knx-1 low noise preamplifier knx1
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse

2SC1310

Abstract: transistor 5104 db CC103 2cC103
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1310 FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1310 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING 4.3MAX frequency low noise application.

A970

Abstract: A970 TRANSISTOR A970 GR transistor a970 Low-Frequency Low-Noise PNP transistor KTA970 kta970 transistor TRANSISTOR BL 100 kec kta LOW VOLTAGE LOW NOISE AMPLIFIER IC
Contextual Info: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTA 970 U nit in mm ( A P P L IC A TIONS ) 5.1 MAX. • Low Noise Audio Amplifier Applications. ( FEATURES ) KTA970 is a PNP low-frequency, low-noise tra n s is to r that is designed for low noise figure at the impedance of a low

2SA999L

Abstract: 2SA999 trnsistor
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999L is a silicon PNP epitaxial type trnsistor designed for low Unftrmm OUTLINE DRAWING ^ 5.6MAX

BCX71G

Abstract: BCX71 BCX71H BCX71J BCX70 BCX71K NPN marking codes BH sot-23 IN SEMICONDUCTOR
Contextual Info: BCX71 Series VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Suited for low level, low noise, low frequency applications in hybrid circuits. • Low current, low voltage.

Contextual Info: New Product BCX71 SERIES SMALL SIGNAL TRANSISTORS PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ Suited for low level, low noise, low frequency applications in hybrid cicuits. ♦ Low Current, Low Voltage.

BCW61A

Contextual Info: BCW61 Series VISHAY Vishay Semiconductors Small Signal Transistors PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW60 Series NPN

marking BJp

Abstract: BCX71J f 630 Bkp marking code BCX71H
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors BCX71 series FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max, 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in

CPH6021

Abstract: FT10G V 7470
Contextual Info: CPH6021 Ordering number : ENA1910 SANYO Semiconductors DATA SHEET CPH6021 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)

2SA1127

Abstract: Low-Frequency Low-Noise PNP transistor 2SC2634 2SC263
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 Low noise characteristics. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter

Contextual Info: CPH6021 Ordering number : ENA1910 SANYO Semiconductors DATA SHEET CPH6021 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 Low noise characteristics. High foward current transfer ratio hFE. • Absolute Maximum Ratings Ta=25˚C Parameter

2SB1036

Contextual Info: Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 4.0±0.2 ● • Absolute Maximum Ratings 0.8 0.75 max. Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV.

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 5.1±0.2 ● Low noise characteristics. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings

k 2134

Abstract: C 4242 transistor PSR 406 ADM 4242
Contextual Info: LM833 Dual Low Noise, Audio Amplifier The LM833 is a standard low–cost monolithic dual general–purpose operational amplifier employing Bipolar technology with innovative high–performance concepts for audio systems applications. With high frequency PNP transistors, the LM833 offers low voltage noise

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE 0.7±0.2 • Features 12.9±0.5

KT 839

Abstract: 2SA1963 ITR05023 ITR05024 ITR05025 ITR05026 ITR05027 TA-0541 marking MS
Contextual Info: Ordering number:ENN5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequency Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz).

2SB1036

Abstract: 2sB103
Contextual Info: Transistors 2SB1036 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm 4.0±0.2 • Features • Optimum for high-density mounting • Allowing supply with the radial taping • Low noise voltage NV 15.6±0.5 0.8 ue

BZX71

Contextual Info: New Product BCX71 SERIES SMALL SIGNAL TRANSISTORS PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. .122 (3.1) .110 (2.8) .016 (0.4) Top View ♦ Suited for low level, low noise, low frequency applications in hybrid cicuits.

LM833

Abstract: LM833DR2 lm833 equivalent LM833D LM833N MC33079
Contextual Info: LM833 Dual Low Noise, Audio Amplifier The LM833 is a standard low–cost monolithic dual general–purpose operational amplifier employing Bipolar technology with innovative high–performance concepts for audio systems applications. With high frequency PNP transistors, the LM833 offers low voltage noise

MARKING 720 SOT23

Abstract: SOT23 MARKING CODE 720 BCX71H BCX71J BCX71K BCX70 BCX71 BCX71G transistor with marking BH BJ MARKING CODE
Contextual Info: Philips Sem iconductors Product specification PNP general purpose transistors BCX71 series FE A T U R E S PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 45 V) 1 base • Low noise. 2 emitter 3 collector APPLICATIONS • Low level, low noise, low frequency applications in

LM833

Abstract: NS LM833 lm833 in audio amplifier LM833 data
Contextual Info: g MOTOROLA Dual Low Noise, Audio A m plifier The LM833 is a standard low-cost monolithic dual general-purpose operational amplifier employing Bipolar technology with innovative high-performance concepts for audio systems applications. With high frequency PNP transistors, the LM833 offers low voltage noise

Contextual Info: Transistors 2SB1036 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • Low noise voltage NV 7.6 • Features

2SA1127

Abstract: 2SC2634 SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 4.0±0.2 • Low noise voltage NV • High forward current transfer ratio hFE