LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Search Results
LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
SF-NDAAFJ100G-002M |
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Amphenol SF-NDAAFJ100G-002M 2m (6.6') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 (26-AWG Low-Loss) | |||
CS-DSLSZH25MF-002.5 |
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Amphenol CS-DSLSZH25MF-002.5 25-Pin (DB25) LSZH Low Smoke D-Sub Cable - Double Shielded + EMI Cage - Male / Female 2.5ft |
LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Ordering number : ENN6798~[ NPN Epitaxial Planar Silicon Transistor EC3202C Muting Circuit Applications Features • Ultrasmall-sized package, facilitates miniaturization in end products. • Low output capacitance. • Low collector-to-emitter saturation voltage. |
OCR Scan |
ENN6798~ EC3202C EC3202C] E-CSP1008-4 IT02790 | |
to390
Abstract: 2SC4132 marking 82
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Original |
2SC4132 80MHz) 40X40X0 30MHz to390 to390 2SC4132 marking 82 | |
Contextual Info: Transistors 2SD2074 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE |
Original |
2SD2074 | |
2SB1439
Abstract: 2SD2183 A985A
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OCR Scan |
2SD2183 2SB1439 2SB1439 2SD2183 A985A | |
2SD2210GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SD2210G 2SD2210G | |
EN1609DContextual Info: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm |
Original |
EN1609D 2SC3591 2010C 2SC3591] O-220AB EN1609D | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron |
Original |
2002/95/EC) 2SD2210G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2459G Silicon NPN epitaxial planar type For low-frequency output amplification • Package ■ Features • High collector-emitter voltage (Base open) VCEO • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SD2459G | |
Contextual Info: Transistor 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 * Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 |
Original |
2SD2185 2SB1440 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440G • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SD2185G 2SB1440G | |
Contextual Info: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Peak collector current |
Original |
2SD1330 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SC5026G 2SA1890G | |
Contextual Info: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter |
Original |
2SD2178 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC |
Original |
2002/95/EC) 2SD2457G | |
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2SD2178Contextual Info: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter |
Original |
2SD2178 2SD2178 | |
2SD1302Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SD1302 2SD1302 | |
TO-92BContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SD1302 TO-92B | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2184 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • High collector-emitter voltage (Base open) VCEO • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SD2184 15nteed | |
Contextual Info: Transistor 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm • Absolute Maximum Ratings Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO |
Original |
2SD1330 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SD2177A | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 90˚ • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC |
Original |
2002/95/EC) 2SD2178 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC |
Original |
2002/95/EC) 2SD2457G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 90˚ • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC |
Original |
2002/95/EC) 2SD2178 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat) |
Original |
2002/95/EC) 2SD2177A |