LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Search Results

Contextual Info: Ordering number : ENN6798~[ NPN Epitaxial Planar Silicon Transistor EC3202C Muting Circuit Applications Features • Ultrasmall-sized package, facilitates miniaturization in end products. • Low output capacitance. • Low collector-to-emitter saturation voltage.

to390

Abstract: 2SC4132 marking 82
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4132 Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage

Contextual Info: Transistors 2SD2074 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE

2SA1674

Abstract: 2SC4391
Contextual Info: Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO

2SD2184

Contextual Info: Transistors 2SD2184 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • High collector-emitter voltage Base open VCEO • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SD1302

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 • Low collector-emitter saturation voltage VCE(sat)

2SB1439

Abstract: 2SD2183 A985A
Contextual Info: Power Transistors 2SD2183 2SD2183 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Output Amplifier Complementary Pair with 2SB1439 ■ Features • High collector-em itter voltage VCeo • Low collector-em itter saturation voltage (VcEisati)

2SD1330

Contextual Info: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 1.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2SD2210G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Features ■ Package • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm

EN1609D

Contextual Info: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron

2SD2210G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2459G Silicon NPN epitaxial planar type For low-frequency output amplification • Package ■ Features • High collector-emitter voltage (Base open) VCEO • Low collector-emitter saturation voltage VCE(sat)

2SD1328

Contextual Info: Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1996 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 (0.8) • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440G • Features ■ Package • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Peak collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

2SD2178

Contextual Info: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter

2SD2457G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC

Contextual Info: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC