LOUA Search Results

1N4725

Abstract: IN4719E 1N4719E 1N4720E 1N4721E 1N4722E 1N4723E 1N4724E 1N4725E
Contextual Info: EDAL INDUSTRIES INC m MSE D BCHSVlb D0D032L, 2 ^ • EDL T~ o ! - \:r ,050" \ t . 750 '1 -4 -— 375 " — -750 'J— + £ Bv PIV SEE CHART Io 3 AMPS @ Is 300 AMPS Vf 1 v @ Ir lOuA Ir 2mA STYLE Alep PART NUMBER 75°C 3 AMPS @ 7-5°C @ PIV @ 25°C @ PIV

1N2610

Abstract: 1N2613 LOUA 1n2611 1N2609E 1N2610E 1N2611E 1N2612E Edal 1N2614E
Contextual Info: EDAL IN DU STR IE S INC 45E D 30^S71b DD0QEÖÖ bES • EDL T- oi-h .250” 1 11 m t % A - 032" DIA. .115" DIA- Bv PI7 SEE CHART Io .75 AMP @ Is 30 AMPS Vf 1.1 V Ir lOuAMP @ 50 @ .75 AMP @ 25 c° PIV @ 25 c° @ STYLE c° @ c° A lr x STAMP1N2609E - 1N2619E

in4722

Abstract: 1N4725 IN4720 MSe 750 1N4719E 1N4720E 1N4721E 1N4722E 1N4723E 1N4724E
Contextual Info: EDAL INDUSTRIES INC MSE D • BCHSTlb □□□□3Eb 2^ ■ EDL T-or-1rr ,050" \ 750*1- 4 *-. 37511 . - 750 «— * & Bv PIV SEE CHART Io 3 AMPS @ Is 300 AMPS Vf 1 v @ Ir lOuA Ir 2mA STYLE Alep PART NUMBER 75°C 3 AMPS @ 7-5°C @ PIV @ 25°C @ PIV @ AMBIENT

LOUA

Contextual Info: E le c tric a l C h ara cteristic s @ 25°C ± 5°C 1 . Short C irc u it C urrent 2.3uA min @ 3mW/aii2, lOkii load 180 rW min 2. Open C irc u it Voltage 3. Dark Reverse Leakage lOuA max. Current @ -IV 4. Operating tem perature range -55°C to 100°C 5. Storage tem perature range

1N3286

Abstract: LOUA 1N3282-1N3286 OATI 1N3282 1N3283 1N3284 1N3285
Contextual Info: \ EDAL IN D U S T R I E S INC 4 5E J m B C H ÍT lb □ □□02RM . • EDI­ TTO A- t B. pIY t o— S- V SEE CHART 100 mA — ' 25 2.5 AMPS 2.5 y, Q 100mA 25 l.OuA @ PIV 25 PIV 100 vf-t c° r-lOuA PART # PIV 1N3282 1N3283 1N3284 1N3285

2SB645

Abstract: 3fc transistor AC73
Contextual Info: : SILICON PN P T R IP L E DIFFUSED M E SA TRANSISTO R 2SB645 Utait i n me O rower A m p l i f i e r A p p lic a tio n «Â ttŒ -C -fo :V 0 2 &OMAX. ^LOUA O '-2 0 0 V ck y 9 y > 'J , ¿ ' « « » ¡ d i f f i d o : rT »12MHK Typ. tfi.o-<íro 2SDÖÖÖ ¿ 3 X 7 " •; > X * ' J t C 4 ï - i - t o

LOUA

Abstract: 1N3285 1N3282 1N3283 1N3284 1N3286
Contextual Info: EDAL INDU STRI ES INC MSE D / -Ô f - O ' J PXY IÄ SEE CHART . 100 mA 25 2.5 AMPS V 2.5 vf- y Q 100mA 25 T PIV 25 PIV 100 l.OuA P- lOuA PART # .o ‘ PIV 1N3282 1N3283 1N3284 1N3285 1000 1500 2000 2500 3000 1N3286 • . 2£Y. DESCRIPTION

Contextual Info: REVISIONS REV A • 2.840 [7 2 .1 4 ]- I¥ ECN, ERN NO. louauduiv DATE PRODUCT DRAWING DEC20/05 APPRD. K.L. PLASTIC PLASTIC COVER BRACKET / r OVER CONTACTS IN THIS AREA. CAST SHELL BOARDLOCK BRACKET # 4 -4 0 THREADED HOLE SECTION THROUGH MTG HOLE -.3 2 0 [8 .1 3 ]

1N2609E

Abstract: 1N2610E 1N2611E 1N2612E 1N2613E 1N2614E 1N2615E 1N2616E 1N2617E 1N2619E
Contextual Info: EDAL I N D U S T R I E S INC 4SE D • 3 0 ^ S 7 1 b D D O D Eö ö bES ■ EDL T ^o/-// i .1115" DIA. / - L .032" DIA. Bv PI7 Io Is Yf Ix SEE CHART .75 AMP 30 1 .1 lOuAMP c° AMPS V @ @ STYLE A lrx STAMP1N2609E - 1N2619E EQUIV. TO EDAL P/N 1N2609E

TMPZ84C

Abstract: 2 pins crystal oscillator TMPZ84C60P T6497 tokyo denpa
Contextual Info: _ TOSHIBA I N T E G R A T E D CIRCUIT TMPZ84C60P TECHNICAL DATA TMPZ84C60P CMOS Z80 Clock Generator/Controller 1. General Description and Features The TMPZ84C60P is a clock generator/controller for the TLCS-Z80 CMOS Family (Microprocessor (MPU) and its peripheral LSI's) fabricated with

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG8G4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D rain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low D r a i n-Source ON Resistance

Contextual Info: SÏLONEX s SLED -563L SLED -563F SLED -563E SLED-563L 7 00nm V I S I B L E EMITTER SLED-563F SLED-563E ttrf' 0. 2 1 0 G eneral D escription 0.5 00 The S i l o n e x SLED-563 i s a h i g h o u t p u t G a lliu m A r s e n id e P h o sp h o ru s e m i t t e r w hich

CRYSTAL 20 mhZ

Abstract: Crystal oscillator 12 MHz 130Q 1N3600 604D PCK604S
Contextual Info: OM C HI P SEE D S YSTEMS bT' l OLi S? 0000M47 OCS SD2 PCK604 ^ 5 0 - 0 ^ 50 to 600 MHz Crystal Controlled Frequency Synthesizer OnChip Systems P R O D U C T H IG H L IG H T S 50 - 600 MHz ♦ F requency Range 50 to 6 0 0 MHz 12.5-18.75 MHz CRYSTAL ♦ Inexpensive In p u t C rystal 12.5 to

KUAN HSI D2A050000

Contextual Info: PRODUCT SPECIFICATION DATE : REED RELAY: cosmo D2A050000 ELECTRONICS CORPORATION NO. 50R01013 REV. SHEET 1 OF 2 2 1. OUTSIDE DIMENSION : UNIT ram o d KUAN HSI D2A050000 O — UJ TU UJ 19.5 0.4 \ 5.5 "T 3.0 0. 5 - _ jL - 7. 6 2 - 10 . 15 8.9max. 2.54 2. 5 4

Contextual Info: PRODUCT SPECIFICATION DATE : REED RELAY: co sm o NO. 50R01007 SHEET 1 OF 2 D1B050000 [e l e c t r o n i c s CORPORATION 1. OUTSIDE DIMENSION : UNIT mm O CL KUAN HSI D1B050000 •o— O ' T =l— CUT 19.5 7.0 r 0.4 5.5 T 0.5 0.25 3.0 — _L 7.62 10.15 8.9max.

Contextual Info: PRODUCT SPECIFICATION DATE: Reed R e la y : KUAN HSI NO. 50R02020 D1C 121000 ELECTRONICS CO.,LTD. SH E E T 1. OUTSIDE DIMENSION : UNIT mm O . JZL ) Q n KUAN H SI D1C121000 T=i—nr L_l 1.25 7 62— • . - ■*—6.9mox.- 05/12/94- 2.54 2.54 TOLERANCE : ±0.1 mm

DI270B

Abstract: DI8884A RP181
Contextual Info: DIONICS INC. 65 RUSH MORE ST., WESTBURY, N.Y. 11590 516*997-7474 D18 88 4A/D I270B High Direct Replacement General Voltage for Cathode National Decoder /Dri ver DM8884A Description The DI8884A is designed to decode four lines of BCD input and drive seven segient digits of gasfilled readout displays. Two separate inputs are

MG50D2YM1

Contextual Info: TOSHIBA {DISCRETE/OPT0> TD 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE~| TGTT E S G □Dlb4Eti 1 90D D T -3 9 -5 7 16426 TOSHIBA GTR MODULE MG50D2YM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. flOTOR CONTROL APPLICATIONS.

Contextual Info: '7 005120 F eatures 4 « n v-t'cA. Paged. C onfigurations w ith Page Reset on Pozuet—Up AT27C512 - Not Paged, 64K x B AT27C51S - 4 Pages. 16K x fl AT27CS1S - 2 Pages. S2K x 8 Low Power CMOS Operation 40mA max. Active a t SMHx 100y,A max. Stan dby F ast Read Access Time — 120ns

KUAN HSI

Abstract: Reed relay KUAN SS1A120098 1110Q
Contextual Info: PRODUCT SPECIFICATION DATE: Reed Relay : KUAN HSI NO. 50R06014 SS1A120098 ELECTRONICS CO.,LTD. SHEET 1. OUTSIDE DIMENSION : UNIT mm 7.0 24.13 KUAN HSI SS1A120098 3.0 Í 0.5 - — 10. 16 — - 5.08 5.08 2. SCHEMATIC : TOP VIEW Ô 1 ISSU E OàVQ CHECK Ô

KUAN D1C240000

Abstract: D1C240000
Contextual Info: PRODUCT SPECIFICATION DATE : REED RELAY: co sm o D1C240000 ELECTRONICS CORPORATION 03/26/00’ NO. 50R01021 REV. SHEET 1 OF 2 2 1. OUTSIDE DIMENSION : UNIT ram ID CL JZ 1 Q. KUAN HSI D1C240000 9 ^ TD— CT TZJ— CT 19.5 0.4 5.5 3.0 0 .5 - _L -7 .6 2 -

KUAN HSI

Abstract: relay reed kuan Reed relay KUAN KUAN relay ru D1B121000 KUAN RELAY Scans-004117 D1B1210
Contextual Info: PRODUCT SPECIFICATION DATE: KUAN HSI mÆm Mm JL 05/11/94’ NO. 50R02008 Reed Relay : ^ D1B121000 ELECTRONICS CO.,LTD. 1. OUTSIDE DIMENSION : UNIT m m •Q— Cl n . jz l K U A N HSI ) - SHEET D1B121000 7 . 622.54 2.54 —8.9m ox.-*" TOLERANCE : ± 0 . 1 m m

KUAN d1b240000

Abstract: KUAN D1B240000 KUAN HSI D1B240000
Contextual Info: PRODUCT SPECIFICATION DATE : cosmo REED RELAY: D1B240000 ELECTRONICS CORPORATION NO. 50R01009 REV. SHEET 1 OF 2 2 1. OUTSIDE DIMENSION : UNIT mm £2 d jm □_ KUAN HSI D1B240000 O—o a — i=r 19.5 7.0 i i 0.4 5.5 0. 2 5 - T 3.0 _L 0. 5 - I 7.62 10.15

2N3903

Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350