OATI Search Results

Contextual Info: I S 6 1 L V 1 2 8 I S 6 1 L V 1 2 8 1 1 ISSI 6 6 L 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY advaAUvjUo ^ : , n/ ti^iy y oation FEATURES DESCRIPTION • High-speed access time: 10, 12, and 15 ns The IS S I IS61LV12816 is a high-speed, 2,097,152-bit static

Contextual Info: REVISIONS CUSTOMER OATI ECU A HK2232 Release fo Custom er □ 6 /0 3 /0 2 IP A1 HK2260 A4: 1.00 was 2.14 7 /8 /0 2 IP DRAWING K sa n m o M A fW W V tO IT U A2 HK2280 B3: Added m ated position 7 /3 0 /0 2 IP B 3 .7 5 + C .2 /-0 .1 9 /1 0 /0 2 IP AMPHENOL EAST ASIA LIMITED.

C6096

Abstract: C4953 C30 1J 30 posn
Contextual Info: ; UMPÜBL JBH5D. | flE lFA S E D fO R F U B IJ C A T IW I 5327 D F ] FO R EVISIO N S WSCAIiTJCW ¡OK 1TB p v' y B REV a REDUN PER 0 F - S 3 3 3 C REV PER 0 5 0 0 - ? 3 6 9 - 9 3 TA AJG OATi 1-*3 S-4-W AP'D OG : os : * TH IC K P . C . BOARD R E F SECTION A-A

Contextual Info: Electronic Components Put. Ltd. METAL OXIDE RESISTORS Series: MO / MOS Construction: Features: M e ta l O xide R e sistive Layer ► Small in Size. ► Electrical & mechanical stability & high reliability. Flam eproo f S ilic o n e C oating High A lu m in a C eram ic Rod

Contextual Info: CARBON FILM RESISTORS FLAM E-P R O O F TYPE INTRODUCTION FEATURES The FCR S e rie s F lam e-P roof C arbon Film R e sisto rs are m a n u fa c tu re d by C oating a homogeneous film of pure carbon on high grade ceram ic rods, resistance less than 10ii have an

Contextual Info: PLASTIC FILM CAPACITORS YS.YP n ic liic o it Foil Type Polyester Film C apacitor serie s L o w Profile S upe r M iniature Tyoe, C oatin g w ith C lear-yello w R esin Smaller • YS-Extrem ely small in dimensions both of height and body width, and light in weight compared

MO-211

Abstract: 8 PIN SMD IC 211
Contextual Info: RE V I S I O N S SYMM DESCRIPTION LTR A £ RELEASE TO DO CUMENT C O NTRO L E.C.N. DATE 12202 04/28/1999 BY/APP'D M S/ 0l\l 8X NOTE 3 S YMM Ç. 0.5 ( 0. 5) LAND PA TT ER N RECOMMENDATION TOP S I D E NOTE 1 BUMP 0.06 0.04' C OATI NG- 1 CORNER— ' NOTE 4 S ILICON

Contextual Info: Jis m o oucTH O . IICVIttONt cA r. Pai UFQ. p o lp a its SH6&7 z «iv • 'V if * * * - OATI CJ»$ e e 4 T 2 fJ H M r 34/ m r & r I r m iiJ ■v DfSCMIPTlON # AJOT&* J g ± * £ - T y fia > •*4 * f f a j* J t i o tM M f i w t m a mu . Q m HOWQ VAT\. t ¿JLA&t, Gt4t$ f/ itto P o ty tS T tf

Contextual Info: Series V P A & VKA 10, 25. 50. 100, 160-175, 200-225 Watt Ad|ustable-Pawer a Wirewoiind Resistors ? C oating V itreous enam el S Core T ubular ceram ic Term inals T inned, lug term inals, solderable to M IL-R -26 W eight V P I OF A V P 25K A 10 wait 25 watt

INTEL 2817

Abstract: 2SC17 26C16 intel 28c16 xicor 2816
Contextual Info: fcc VISIONS OATI 04 octcftimoN •HT •V C m June 24, 198$ ? PRELIMINARY CUSTOMER PROCUREMENT SPECIFICATION 2 8 C 16 /2 B C 17/ 2 BC 291 UK ELECTRICALLY ERASABLE PROM APR 2 0 1993 006085 •HI IT trvj / /< 1-14 LAST H I V •Mirr UtfTKtV ïm it u r io M Ü T

Contextual Info: n m HIGH VOLTAGE PRECISION THICK FILM RESISTOR C oating T h ick Film E lem ent T SERIES • • • • • • • • Working voltage up to 100KV Wide resistance range Low temperature coefficient of resistance Low voltage coefficient Termination variants

VK200WA

Abstract: VK160WA
Contextual Info: Series V P A & V K A 25, 50,100,160-175, 200-225 Watt Adjustable-Power. Wirewounci Resistors • S e r i e s V P A & V K A M a t e r i a l S p e c if ic a t io n s C oating V itreous enam el C ore T u b u lar ceram ic T erm inals T inned, lug term inals, solderable to M IL-R -26

CSC5E

Abstract: sc3d SC5E
Contextual Info: S eries S e r i e s C S C Ma t e r i al S p e c i f i c a t i o n s C S C 3 , 5 , 1 0 Watt; i 3 % Tolerance W ire w o u n ri. Silicone C oating C onform ai Silicone Resistors Core Ceram ic Term inals T inned copperw eld, solderable to M IL -R -26 standards

Contextual Info: J MIS DRAUl HO IS UNPUBLISHED. AD p. 51 r J«« ftEVtSIOWS otacAiwiw OATi » r MOBS -1 3 PER EC 0 0 2 0 -0 9 4 1 -9 3 C 9-2S -96 D PER EC 0 0 2 0 - 0 3 3 0 - 9 6 T .S . IT* rk hr : : * NO S N A P - I N P O L A R IZ IN G FEATURE P L A T E D W ITH . 0 0 0 0 3 0

Contextual Info: SIEMENS kom 2085 4-CHIP SILICON PIN PHOTODIODE ARRAY P a cka g e D im e n sio n s in m m I / .8 ± 2 Transparent C oating C hip PC boa rd / / / / > / 6±. 1 / -j- - 25.5 ± 3 S chem atic -19.9 — 16.4 ± 3 K A2 o —1> - -KJ- 0 A 1

Contextual Info: MOTOROLA SC XSTRS/R ia E F D I b3fc.?2SM G oatisoa i | M A X I M U M R A T IN G S Sym bol V a lu e U n it C o llector-Em itter Voltage V cEO 40 Vdc C ollector-B ase V oltage VCBO 65 Vdc Em itter-B ase Voltage vebo 6 Vdc R a tin g C o llecto r Current - C ontinuous

PR 750 Series

Contextual Info: S e rie s VPR M a te ria l S p ecifica tion s C oating C onform ai vitreo u s ename! C ore C eram ic Term inals T inned term inals, soldcrablc to M IL-R -26 standards W eight V PR 5F V PRIO F VPR20H 5 w att .192 oz. 5.38 gm s. 10 watt .304 oz. 8.51 gm s. 20 watt

VC10F 270

Contextual Info: Series VC Material Specilications C oating C onform al vitreous enam el Core C eram ic Term inals T inned leads, solderable to M IL -R -26 standards W eight V C3D VC5E VC10F 3 w att .032 oz. .896 gm s. 5 w att .096 oz. 2.69 gms. 10 w att .224 oz. 6.27 gms.

Contextual Info: NOTES: S old er: 1. 50SN/32PB/18CD 2 . 2 .5 % ~ 3 .0 % R M A F lu x C oatin g 3 . 2 9 5 °F 1 4 5 °C M eltin g Tem p . T u b in g : 1 . M u ltip le w a ll P o ly o le fin 2 . M e lta b le , in te g ra l in n e r w a ll 3 . 2 7 5 oF [1 3 5 oC ] s h rin k te m p .

Contextual Info: I 15.4 Anforderunqsstufe /C la ss | Z 3d □afa cade INÜ3 XXXXXXX ff 11 04.8 2 5.35 2x7.5-15 Lochbild für Leiterplatte Bestückungsseite) 12.5 2x7.5-15 Lochbild für Leiterplatte (Bestückungsseite) für Einpresstechnik B oati häe pattern (Component mountmg side)

tlo7

Contextual Info: !22Q ftfVMKM* OMcmmow MV A B c D 1500 y j I F L300TY r e C R 4 0 9 2 i4 0 5 3 SH'. 2 ADDED LV LENGTH ADO ED t e r m s h a p e CH'G'O NOTE 5 - ADDED N l TO PLATING A D D S H I V D im S H 2 CHANGE L D IM C H G O NO TE. 3 CHNG PLATN6 n.tf/. wr OATI TLO 7 .0’;

Contextual Info: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted

wo 13005 2 transistor

Abstract: DBS PACKAGES INS160
Contextual Info: PRODUCT PACKAGING SPECIFICATIONS AMMOPAK PACKAGING FOR TRANSISTORS TO-92 PLASTIC CASE C a r r ie r ta p e T h e c a r r ie r ta p e c o n s is ts o f a c a r d ­ b o a rd s trip w ith s p ro c k e t h o le s . T he p in s o f th e tr a n s is to r s a re s e c u re d

TMP96C141F

Abstract: tmp96c141
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP90PM38 4.15 Program Operation Timing Chart PROM mode High Speed Program Formula * A0-A16 CE OE D0~D 7 UU U/ m ' y \ \ \ i\ _;_;_ m y UNENOWN ~ - \ _ ( / \ ~\ tNPUTDATA CONFIRMATION m m / S _ / OUTPUT DATA \