LINEAR CLASS H AMPLIFIER Search Results

CLASS H POWER AMPLIFIER

Abstract: capacitor 2u2 220n capacitor datasheet pink noise generator GC590 GS3013 220n capacitor 2u2 k 305 v
Contextual Info: Linear Class H Current Manager Hybrid GS3013 DATA SHEET FEATURES DESCRIPTION • complete linear system The GS3013 is a linear hybrid containing three amplifier stages. • current mode class H output stage This product incorporates a current mode class H power

CLASS H POWER AMPLIFIER

Abstract: pink noise generator schematics "Class H Amplifier" pink noise generator circuit diagram of transducer 180-20K thd resistors 1k weight transducer class h power amplifier schematic 12k resistor
Contextual Info: Linear Class H Amplifier GC590 - DATA SHEET FEATURES DESCRIPTION • current mode class H output stage The GC590 is a linear amplifier system containing three amplifier stages. • current drive power amp This product incorporates a current mode class H power

Z4LB-S10V2

Abstract: Z4LB-S30V2 Z4LB-A3040PV2 omron sensor 5v laser beam laser diode
Contextual Info: Parallel Beam Linear Sensor Z4LB-V2 Visible Red Class II Laser Width/Profile Measurement Sensor Providing High-Speed Precision Measurement with Flexible Operation H FDA Class II IEC Class 2 visible red laser ensures ease of optical axis adjustment H H 5 micron resolution maximum

VK200 INDUCTOR

Abstract: inductor vk200 VK200 4B inductor choke vk200 MRF240 Unelco Bradley Semiconductor allen bradley resistor VK200-4B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt V H F large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain

Contextual Info: C3EIMIMUM C O R P O R A T I Linear Class H Current M an ager Hybrid O N GS3013 DATA SHEET FEATURES DESCRIPTION • complete linear system T h e G S 3 0 1 3 is a lin e a r h y b rid c o n ta in in g th re e a m p lifie r s ta g e s . • current mode class H output stage

BZY88-C3V3

Abstract: BLW33 BY206 702 P TRANSISTOR 100A-4R3-C-PX-50 carbon resistor
Contextual Info: bSE T> m 7110flEb 00b3514 347 « P H I N BLW33 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

Contextual Info: Order this data sheet by MRF3104/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF3104 M RF3105 M RF3106 T h e R F L in e M icrow ave Linear Power Transistors Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:

L9838

Contextual Info: MOTOROLA Order this document by MHL9838/D SEMICONDUCTOR TECHNICAL DATA M H L9838 The RF Line C ellular Band Linear A m plifier 8.0 W, 31 dB 8 00-925 MHz LINEAR AMPLIFIER Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding

capacitor 3k3

Abstract: GENNUM GS3034 EH305 DT 8210 GS3034
Contextual Info: Linear Class H CIC Size Hybrid GS3034 - DATA SHEET FEATURES This new breed of output stage adapts the bias current of the receiver to the user's listening environment. In relatively loud environments the receiver will be fully biased similar to a traditional class A amplifier. However, as the loudness of the

MHL9236

Abstract: MHL9236M
Contextual Info: MOTOROLA Order this document by MHL9236/D SEMICONDUCTOR TECHNICAL DATA M H L9236 M HL9236M The RF Line C ellular Band Linear Am plifiers Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW53601 The RF Line M icrowave Linear Power Transistor . . . designed primarily for wideband, largt-signal output and driver amplifier stages in the 1.0 to 3.0 G H z frequency range. • Designed for Class A or AB, C om m on-Em itter Linear Power Amplifiers

Contextual Info: - P 3 3 - o q LV2931E50S \ ShE T> • PHILIPS INTERNATIONAL 71106Sb Q04b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended fo r use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GHz frequency range.

"Class H Amplifier"

Contextual Info: GENNUM C O R P O R A T I O Linear Class H Amplifier N GC590 - DATA SHEET FEATURES DESCRIPTION • current mode class H output stage T h e G C 5 9 0 is a lin e a r a m p lif ie r s y s te m c o n t a in in g th re e a m p lif ie r s tag es. • current drive power amp

2n2222 npn transistor

Contextual Info: Order th is data sheet by MRF862/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line MRF862 NPN Silicon RF Power TVansistor M otorola Preferred Device CLASS A 800-960 MHz 36 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

ta309

Abstract: MSA094 LV2931E50S Broadband emitter nm LED
Contextual Info: " 1 ^ 3 3 - O R LV2931E50S \ ShE T> PHILIPS INT ERNATIONAL • ?110fiSb DD4b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR N PN silicon planar microwave power transistor intended for use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GH z frequency range.

class td amplifier

Abstract: 40202 2X24 YLII50 GLT100 mullard septar socket
Contextual Info: V.H.F. BEAM POWER TETRODE YLII50 TENTATIVE DATA QUICK REFERENCE DATA Radiation and convection cooled beam power tetrode intended for use as a linear v .h .f . amplifier for s. s .b .,C la s s 'C' v .h .f . amplifier or l .f . Class 'AB' amplifier or modulator.

RTC146

Abstract: IEC134 LKE21004R LTE21009R
Contextual Info: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.

NPN transistor 2n2222 Zin

Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1
Contextual Info: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

2n2222 npn

Abstract: 2n2222 npn transistor MRF857 mrf857s
Contextual Info: O rder th is data sheet by MRF857/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF857 M RF857S T h e RF Line NPN Silicon RF Pow er TVansistor M otorola P referred Devices CLASS A 800-960 MHz 2.1 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

Contextual Info: _ S ¡9961 Vishay Siliconix 12-V Voice Coil Motor Driver FEATURES • 1.8-A H-Bridge Output • Class B Linear Operation • Externally Programmable Gain and Bandwidth • Undervoltage Head Retract • Programmable Retract Current

IC BL 176A

Contextual Info: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.

Contextual Info: N AMER P H IL IP S/ D IS C R ET E ObE D I« bbS3T31 DOIM'IOI T • l LAE4001R T-S\-n MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r common-emitter class-A linear power amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,

transistor tt 2222

Abstract: BLW33 BY206 BZY88-C3V3 DDST320 JH transistor BZY88C philips mfr
Contextual Info: N AMER P H I LI PS / DI S CR ET E b^E » • b b s a 'm □ G a 'm ? J Daa IAPX BLW33 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

Contextual Info: • □ t>E D N AUER P H IL IP S /D IS C R E T E MAINTENANCE TYPE ■ t.b 5 3 i3 ]> ■ OOlMTSS ■ LKE1004R for new design use LTE21009R T - 3 3 - OS" MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a common-emitter class-A linear power amplifier up to 1 GHz.