LIMT SWITCH Search Results
LIMT SWITCH Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TCWA1225G | Toshiba Electronic Devices & Storage Corporation | High Power Switch / SPDT / WCSP14 | Datasheet | ||
| TBAS16 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
| BAV99 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet | ||
| BAV99W | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 100 V, 0.15 A, USM | Datasheet | ||
| TBAV70 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet |
LIMT SWITCH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NJM2336 Battery Charger IC GENERAL DESCRIPTION PACKAGE OUTLINE The NJM2336 is a voltage and current control IC which contains precision voltage reference. It is suitable for battery charger, second controller of switching regulator systems, and other battery systems. |
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njm2336njm2336af/bf/cf | |
10 A, 12 V ,battery charger circuit
Abstract: NJM2336AF diode RA 225 R NJM2336
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njm2336njm2336af/bf/cf10 a, 12 v ,battery charger circuitnjm2336af+1 | |
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Contextual Info: ZPiodueti, <J TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2N4036 MEDIUM-SPEED SWITCH DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is intended particularly as medium speed saturated switch and |
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2n4036150ma500ma-50ma | |
NPN transistor 2n 3904 temperature sensor
Abstract: NDT3055L TR 3906 PNP SM 100RPM 2N3904 ADM1027 ADM1027ARQ MMBT2222 RQ-24
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adm102724-pinrq-24npn transistor 2n 3904 temperature sensor+6 | |
NPN transistor 2n 3904 temperature sensor
Abstract: TR 3906 PNP SM NPN transistor 2n 3904 Box 34C MBT2222 NDT3055L FAN transistor 3904 TRANSISTOR 2N 3904 100RPM 2N3904
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adm102724-pinrq-24npn transistor 2n 3904 temperature sensor+9 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink |
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jf61072n6107e69369221d-02+2 | |
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Contextual Info: LM2717 Dual Step-Down DC/DC Converter General Description Features The LM2717 is composed of two PWM DC/DC buck stepdown converters. The first converter is used to generate a fixed output voltage of 3.3V. The second converter is used to generate an adjustable output voltage. Both converters feature low RDSON (0.16Ω) internal switches for maximum efficiency. Operating frequency can be adjusted anywhere between 300kHz and 600kHz allowing the use of small external |
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lm2717300khz600khz | |
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Contextual Info: LM2717 Dual Step-down DC/DC Converter General Description Features The LM2717 is composed of two PWM DC/DC buck stepdown converters. The first converter is used to generate a fixed output voltage of 3.3V. The second converter is used to generate an adjustable output voltage. Both converters feature low RDSON (0.16Ω) internal switches for maximum efficiency. Operating frequency can be adjusted anywhere between 300kHz and 600kHz allowing the use of small external |
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lm2717300khz600khz | |
593D
Abstract: 594D AN-1149 DO3316 LM2717 LM2717MT LM2717MTX MTC24
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lm2717300khz600khz24-lead+9 | |
593D
Abstract: 594D AN-1149 DO3316 LM2717 LM2717MT LM2717MTX MTC24 die bond
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lm2717300khz600khz24-lead+8 | |
593D
Abstract: 594D AN-1149 DO3316 LM2717 LM2717MT LM2717MTX MTC24 LM271 EEJ-L Series
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lm2717300khz600khz24-lead+9 | |
dubilier capacitor
Abstract: CORNELL DUBILIER CAPACITOR
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lm2717-adj300khz600khz24-lead+2 | |
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Contextual Info: Preliminary Datasheet RJG0601JSP R07DS1213EJ0100 Rev.1.00 Jun 20, 2014 ±60V, ±1.5A, N Channel, P Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in |
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rjg0601jspr07ds1213ej0100hi2886-9022/9044 | |
ITS4200S-ME-P
Abstract: OmniVision CMOS pcb 8 pin 5018 aurix
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its4200s-me-pot-223-4omnivision cmos pcb8 pin 5018+1 | |
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Contextual Info: IRFS610A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V I Low Rds(0 n) ■ 1.169 £1 (Typ.) LO Rugged Gate Oxide Technology |
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irfs610a | |
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Contextual Info: TYPES TF4320A, TP4320A 16-CHANNEL DATA SELECTORS WITH 3-STATE OUTPUTS CMOS LOGIC CIRCUITS S E P T E M B E R » 976 3-State O utput JO R N 1 description D U A L-IN -LIN E PA C K A G E TOP VIEW These circuits are single 16-channel data selectors having four digital select inputs, SO, S I , S2, and S3, |
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16-channeltf4320atp4320a | |
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Contextual Info: Target Specifications Datasheet RJF0611JPD R07DS0581EJ0100 Rev.1.00 Nov 22, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in |
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rjf0611jpdr07ds0581ej0100 | |
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Contextual Info: Target Specifications Datasheet RJF0604JPD R07DS0583EJ0100 Rev.1.00 Nov 22, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in |
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rjf0604jpdr07ds0583ej0100 | |
ATTL7541AAEContextual Info: Advance Data Sheet AKT Microelectronics ATTL7541 Solid-State Ringing Relay Features • Small size/surface-mount packaging ■ Monolithic IC reliability ■ Clean, bounce-free switching ■ Low, matched ON-resistance ■ Built-in current limiting, thermal shutdown, and |
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attl7541attl7541aae | |
ATTL7541Contextual Info: Preliminary Data Sheet AT&T ' Microelectronics ATTL7541 Ringing Access Switch Features • Small size/surface-mount packaging ■ Monolithic IC reliability ■ Clean, bounce-free switching ■ Low, matched ON-resistance ■ Built-in current limiting, thermal shutdown, and |
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attl754116-pin | |
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Contextual Info: Target Specifications Datasheet RJF0611JPE Silicon N Channel MOS FET Series Power Switching R07DS0582EJ0100 Rev.1.00 Nov 22, 2011 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in |
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rjf0611jper07ds0582ej0100 | |
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Contextual Info: Microelectronics ATTL7541 Solid-State Ringing Relay Features • Small size/surface-mount packaging ■ Monolithic IC reliability ■ Clean, bounce-free switching ■ Low, matched ON-resistance ■ Built-in current limiting, thermal shutdown, and SLIC protection |
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attl7541 | |
SNO4062K
Abstract: Automatic power supply switching electronic circuit diagram SNO4062KM 4062K PTC 98011 A1155 4062KM S1232
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sno4062kautomatic power supply switching electronic circuit diagramsno4062km4062k+4 | |
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Contextual Info: Target Specifications Datasheet RJF0606JPE Silicon N Channel MOS FET Series Power Switching R07DS0580EJ0100 Rev.1.00 Nov 22, 2011 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in |
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rjf0606jper07ds0580ej0100 | |