LICON SWITCH Search Results

snap on tools for electronic

Abstract: 19n50 MIL-PRF-8805 MS27257-1 licon switch 19N920
Contextual Info: TABLE OF CONTENTS LICON — SNAP ACTION SWITCHES Table Of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ii – iii Series 11: Miniature 10 amp Double-Break . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 – 47

dc-dc-converter

Abstract: 2SC3309
Contextual Info: 2SC3309 SI LICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. - - ; • ' HIGH SPEED DC-DC-CONVERTER APPLICATION. FEATURES : . Excellent Switching Times tr= l .O/js CMax. , tf=l.O^s Max.)

st 2n2907 to-18

Abstract: P008B 2N2904 2n2905 ST
Contextual Info: SGS-THOMSON RaDSMULKEin^OMlDei 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si­ licon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for

mil-s-8805

Abstract: MS21321-1 MS27240-1 MS21321 ms27240-4 MS27240-2 MS24331 ms24420-1 8805 switch MS27240-3
Contextual Info: type 62 and 63 Sealed sw itches Description The Licon Type 63 Series is an environment-free sealed switch designed for rugged duty and to conform to the rigid specifications of military and standard designs. A one piece housing with "0" ring seals at the plunger and

Contextual Info: f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

BD243

Contextual Info: r z 7 SGS-THOMSON ^7# BD243/A/B/C BD244/A/B/C POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD243, BD243A, BD243B and BD243C are si­ licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium power linear and switching applications.

Contextual Info: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

2n4033

Contextual Info: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

Contextual Info: 7 ^ 5 3 7 oosaagg b • n " - 3 3 -Q °| SCS-THOMSON •mera «« SJ3 BD239/A/B/C BD240/A/B/C S-THOMSON 3GE I> MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec

2sa1329

Abstract: 2SC3346 AC75
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA St d !T| T C H TSSO 0 0 D 7 3 n CDISCRETE/O P T O SI LICON PNP EP IT A X IA L T Y P E PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1013MAX. 03.6=0:2 LIT FEATURES : . Low Collector Saturation Voltage

T1P32

Abstract: bd241 42bb
Contextual Info: f Z 7 SGS-THOMSON BD241/A/B/C BD242/A/B/C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD241, BD241 A, BD241B and BD241C are si­ licon epitaxial-base NPN power transistors in Jedec TCi-220 plastic package, intended for use in medium

d239ab

Abstract: CS696 bd240c D239 D239B d240a D239 PNP
Contextual Info: rZ Z SG S -TH O M SO N B D239/A /B /C B D 240/A /B /C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium

Contextual Info: 7 C^ E 3 7 0 0 5 6 H 0 3 H • 3 - f I SGS-THOMSON BD243/A/B/C D^DD Dl^(Q Il[L[iCTI^ IRgDOS_ BD244/A/B/C S G S-THOMSON 3QE » POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD243, BD243A, BD243B and BD243C are si­ licon epitaxial-base NPN power transistors in Jedec

ZTX453

Abstract: ZTX 15 Ferranti Semiconductors ZT Ferranti ZTX452 ferranti NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
Contextual Info: FERRANTI i semiconductors ZTX452 ZTX453 NPN Si licon Planar M e d i u m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb = 25‘C. • hFE specified up to 1 amp. • High V CEO up to 100 volts. GENERAL DESCRIPTION These are plastic encapsulated, general purpose transis­

adaptive algorithm dpd

Abstract: virtex GTH xilinx digital Pre-distortion DSP48E1 SX475T FPGA Virtex 6 Ethernet Virtex 6 3G-SDI serializer 6.25G interlaken network processor
Contextual Info: FPGA FAMILY virtex-6 FPGAs Th e H ig h-Pe r for mance Prog ram mab le Si licon Fou n dation for Targ ete d Desig n Platfor ms Satisfying the Insatiable Demand for Higher Bandwidth The Programmable Imperative The High-Performance Silicon Foundation • Competitive forces are driving

Contextual Info: 7 1 5 ^ 5 3 7 QOSflMOl Q • 31» ' 1 SGS-THOMSON BD241/A/B/C BD242/A/B/C I(L[1CT[^cq [R0D S S_fi S - T H O M S O N 3QE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD241, BD241A, BD241B and BD241C are si­ licon epitaxial-base NPN power transistors in Jedec

2n h 2222

Contextual Info: 3QE D • 7^237 0031113 T ■ S C S -T H O M S O N UOTM W i ^T-3>S-f3 2N 2218-2N 2219 2N 2221-2N 2222 S G S-TH0MS0N HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are si­ licon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218 and 2N2219 and in Jedec

713 OPTO

Abstract: TRANSISTOR Q35
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA Sb DE i C H T S S a OGDflODfl 1 | ~ 56C 080(38 <D IS C R E T E / O P T O D' T-39-11 SI LICON N CHANNEL-MQS TYPE (7T-M0S) IN D U ST R IA L ,A PPLIC A TIO N S U n it i n mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR

3713

Contextual Info: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON •LEOT «! S 6 b ■ 3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T> EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714, 2N3715 and 2N3716 are si­ licon epitaxial-base NPN power transistors in Jedec TO-3 metal case. They are intended for use in po­

131S

Abstract: 2N3026 15149 sdt8004 SDT7413 SDT7414 SDT7415 SDT7416 SDT7417 SDT7418
Contextual Info: 25 SILICON POWER TRANSISTORS SATU RA TIO N V O LTA G E S C U R R E N T GAIN TYPE NUM BER CASE T YP E V CEO V CBO V 1 V V EBO V hFE MIN. I M AX. V CE v I 'c V CE s A v V BE(s> ! 'c V A I 'b A 5 AMP Sl LICON NPN SDT7413 SDT7414 SDT7415 TO-5 TO-5 TO-5 100 60

TIP29 RCA

Abstract: RCA TIP30
Contextual Info: HARRIS SEMICOND SECTOR SbE D • 43G2E71 0040^42 b^ö W H A S TIP30, TIP30A, TIP30B, TIP30C File Number 988 7=3^7? Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications F e a tu re s : ■ ■ u ■ 30 W at 25°C case temperature

BD139

Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
Contextual Info: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data

IN5711

Abstract: melf Schottky glass jan In5711 SCHOTTKY DIODE SOD-80 JANTX
Contextual Info: SCHOTTKY BARRIER DIODES metelics FOR GENERAL PURPOSE APPLICATIONS CORPORATION FEATURES • High Breakdown Voltage to 70 Volts • Available in Chips, Glass Package Or Double Slug Melf Package • 1N5711 Available in JAN, JANTX and JANTXV • Packages Metallurgical^ Bonded